w503
Abstract: D2502 FW503 MCH3306 SBS004 Schottky Barrier 3A ENN7312
Text: Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low
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ENN7312
FW503
FW503
MCH3306
SBS004
FW503]
w503
D2502
Schottky Barrier 3A
ENN7312
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Untitled
Abstract: No abstract text available
Text: tSENSITRON SPM6M050-010D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL
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SPM6M050-010D
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SPM6M050-010D
Abstract: No abstract text available
Text: SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL
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SPM6M050-010D
SPM6M050-010D
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Untitled
Abstract: No abstract text available
Text: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features Description • RDS on = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB44N25
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FDB44N25
Abstract: No abstract text available
Text: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB44N25
FDB44N25
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IRF95
Abstract: IRF9510 p channel mosfet 100v TA17541
Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
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IRF95
O220AB
IRF9510
IRF95
IRF9510
p channel mosfet 100v
TA17541
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Untitled
Abstract: No abstract text available
Text: FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 m Features Description • RDS on = 69 m (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDPF44N25T
FDPF44N25T
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2P50EG
Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
O-220
MTP2P50E/D
2P50EG
2P50
2p50e
AN569
MTP2P50E
MTP2P50EG
mosfet transistor 400 volts.100 amperes
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Untitled
Abstract: No abstract text available
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
MTP2P50E/D
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2 sd 586
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M070-020D
/-20V
125oC
2 sd 586
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optical mosfet
Abstract: SPM6M070-020D
Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M070-020D
/-20V
optical mosfet
SPM6M070-020D
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AN569
Abstract: MTP1N50E mtp1n
Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to
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MTP1N50E
r14525
MTP1N50E/D
AN569
MTP1N50E
mtp1n
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M080-010D
125oC
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B70N08
Abstract: 70n08 Catalytic Converter 221A-09 NTB70N08 NTB70N08L NTP70N08 NTP70N08L
Text: NTP70N08, NTB70N08, NTP70N08L, NTB70N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are
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NTP70N08,
NTB70N08,
NTP70N08L,
NTB70N08L
70N08
r14525
NTP70N08/D
B70N08
Catalytic Converter
221A-09
NTB70N08
NTB70N08L
NTP70N08
NTP70N08L
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4096 IC 14 pins
Abstract: No abstract text available
Text: SPM6M060-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED
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SPM6M060-010D
/-20V
125oC
4096 IC 14 pins
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4096 IC 14 pins
Abstract: IC 4096
Text: SPM6M060-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev- Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED
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SPM6M060-010D
/-20V
125oC
4096 IC 14 pins
IC 4096
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SPM6M080-010D
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. C Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M080-010D
/-20V
SPM6M080-010D
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mosfet amp ic
Abstract: SPM6M060-010D
Text: SPM6M060-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED
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SPM6M060-010D
/-20V
mosfet amp ic
SPM6M060-010D
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MTP1N60
Abstract: mtp1n
Text: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to
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MTP1N60E
O-220
r14525
MTP1N60E/D
MTP1N60
mtp1n
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210C
Abstract: SPM6M070-020D 70amp
Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. A Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M070-020D
/-20V
210C
SPM6M070-020D
70amp
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MTP2P50E
Abstract: MTP2P50EG AN569 mtp2p mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
O-220
MTP2P50E/D
MTP2P50E
MTP2P50EG
AN569
mtp2p
mosfet transistor 400 volts.100 amperes
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MTP2P50E
Abstract: AN569 mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
r14525
MTP2P50E/D
MTP2P50E
AN569
mosfet transistor 400 volts.100 amperes
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA DATA SHEET 4118, REV A Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M080-010D
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300 Amp mosfet
Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH
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400MHz
T0106
200MHz
18Typ
250pA
tiMaias11!
300 Amp mosfet
mosfet 400 amp
MOSFET FOR 100khz SWITCHING APPLICATIONS
50 Amp Mosfet
dual jfet vhf
jfet 133
jfet transistor
mosfet amp
DUAL JFET Pch
low voltage mosfet switch 3 amp
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