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MMDB35B11 Price and Stock

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MACOM MMDB35-B11 COM-SRD-BEAMLEAD-B11
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMDB35-B11	Bulk			65	1 - 10 - 100 $25.16631 1000 $25.16631 10000 $25.16631	Buy Now
Mouser Electronics	MMDB35-B11					1 - 10 - 100 $31.28 1000 $30.52 10000 $30.52	Get Quote
Richardson RFPD	MMDB35-B11				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

MMDB35B11 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MMDB35-B11		Metelics	Beam Lead Step Recovery Diodes		Scan	PDF

MMDB35B11 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MMDB35B11 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleBeamL Mounting StyleS	Original	PDF	MMDB35B11 Voltage30
MSPD2018 Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800	Original	PDF	foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
smmd-840 Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835 Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.	Original	PDF	MIL-PRF-19500 MIL-PRF-38534 smmd-840 MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
MMD0840 Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2 Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.	Original	PDF	MIL-PRF-19500 MIL-PRF-38534 MMD0840 MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
MSPD2018 Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345 Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for	Original	PDF	A17084 MSPD2018 m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
MMDB30-B11 Abstract: sampling gate STEP RECOVERY DIODES CPA01 MMDB35-B11 MMDB45-B11 B1135 "Microwave Diodes" MMDB35B11 Text: FEATURES • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation • Non-Destruct Transition Time Testing Available MAXIMUM RATINGS Total Power Dissipation. 250 mWat +25°C	OCR Scan	PDF	bOS13S2 -65to MMDB35-B11 MMDB45-B11 TFP-1034 015pF MMDB30-B11 sampling gate STEP RECOVERY DIODES CPA01 B1135 "Microwave Diodes" MMDB35B11
MMDB-45-B11 Abstract: MMDB30-B11 Text: BEAM LEAD STEP RECOVERY DIODES i metelics CORPORATION •.- •.• •C .: • FEATURES •'.*! -, ' . - ■' • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation	OCR Scan	PDF	dioMMDB35-B11 MMDB45-B11 MMDB-45-B11 MMDB30-B11
step recovery diodes Abstract: No abstract text available Text: BEAM LEAD STEP RECOVERY DIODES 111 1 m e te Ü C S * - C OR POR ATI ON FEATURES • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation • Non-Destruct Transition Time Testing	OCR Scan	PDF