BR 8550
Abstract: 8550 transistor 8550 pnp transistor common collector PNP br 8550 c BR 8550 transistor 8550 8550 pnp BR 8550 ic
Text: MMBT8550W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 25 V Collector Base Voltage -VCBO 40 V Emitter Base Voltage -VEBO 6
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MMBT8550W
MMBT8550CW
MMBT8550DW
BR 8550
8550 transistor
8550 pnp transistor
common collector PNP
br 8550 c
BR 8550 transistor
8550
8550 pnp
BR 8550 ic
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MMBT8050CLT1
Abstract: MMBT8050DLT1 MMBT8050D MMBT8050C MMBT8550CLT1 SEMTECH
Text: MMBT8050CLT1 / MMBT8050DLT1 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550CLT1 and MMBT8550DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050DLT1
MMBT8050D
MMBT8050C
SEMTECH
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MMBT8550D
Abstract: MMBT8050C MMBT8550C MMBT8050D
Text: MMBT8550C / MMBT8550D 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary
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MMBT8550C
MMBT8550D
MMBT8050C
MMBT8050D
OT-23
MMBT8550D
MMBT8050D
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mmbt8550
Abstract: MMBT8550L MMBT8550LT MMBT8550LT1
Text: MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4
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MMBT8550LT1
OT-23
MMPT8050LT1
-500mA
225mW
mmbt8550
MMBT8550L
MMBT8550LT
MMBT8550LT1
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BR 8550
Abstract: 8550 sot-23 8550 sot-23 pnp MMBT8550D br 8550 NPN Transistor MMBT8050D ST MMBT8550C 8550 NPN Transistor 8550 TRANSISTOR 8550
Text: MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8550C
MMBT8550D
MMBT8050C
MMBT8050D
OT-23
20MHz
BR 8550
8550 sot-23
8550 sot-23 pnp
MMBT8550D
br 8550 NPN Transistor
MMBT8050D ST
8550 NPN Transistor
8550 TRANSISTOR
8550
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MMBT8050
Abstract: NPN/NPN/MMBT8050 BR MMBT8050D
Text: MMBT8050 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors 1.Base 2.Emitter MMBT8550 is recommended. 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER
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MMBT8050
MMBT8550
OT-23
MMBT8050D
MMBT8050C
MMBT8050
NPN/NPN/MMBT8050 BR
MMBT8050D
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MMBT8550
Abstract: No abstract text available
Text: MMBT8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package
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MMBT8550
OT-23
MMBT8550
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MMBT8550LT1
Abstract: MMBT8550
Text: MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4
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MMBT8550LT1
OT-23
MMPT8050LT1
-500mA
225mW
MMBT8550LT1
MMBT8550
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MMBT8550
Abstract: No abstract text available
Text: MMBT8550W 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage
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MMBT8550W
MMBT8550CW
MMBT8550DW
MMBT8550
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MMBT8550CLT1
Abstract: MMBT8050CLT1 MMBT8050DLT1 MMBT8550C MMBT8550D MMBT8550
Text: MMBT8550CLT1 / MMBT8550DLT1 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
MMBT8050DLT1
MMBT8550C
MMBT8550D
MMBT8550
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MMBT8050D
Abstract: MMBT8050C MMBT8550 MMBT8550C MMBT8550D
Text: MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550C and MMBT8550D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8050C
MMBT8050D
MMBT8550C
MMBT8550D
OT-23
MMBT8050D
MMBT8550
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mmbt8550
Abstract: No abstract text available
Text: MMBT8550W 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage
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MMBT8550W
MMBT8550CW
MMBT8550DW
mmbt8550
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MMBT8550
Abstract: No abstract text available
Text: MMBT8550 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT8050 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER
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MMBT8550
MMBT8050
OT-23
MMBT8550C
MMBT8550D
MMBT8550
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MMBT8550D
Abstract: MMBT8050CLT1 MMBT8550C MMBT8550CLT1 mmbt8550 MMBT8050DLT1
Text: MMBT8550CLT1 / MMBT8550DLT1 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
MMBT8550D
MMBT8550C
mmbt8550
MMBT8050DLT1
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MMBT8550CLT1
Abstract: MMBT8050CLT1 MMBT8550C MMBT8050DLT1 MMBT8550DLT1 MMBT8050 MMBT8550D
Text: MMBT8550CLT1 / MMBT8550DLT1 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050CLT1 and MMBT8050DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
100mA
500mA
500mA,
50MHz
MMBT8550C
MMBT8550DLT1
MMBT8050
MMBT8550D
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MMBT8050CLT1
Abstract: MMBT8050DLT1 MMBT8050C MMBT8050D MMBT8050 MMBT8550CLT1
Text: MMBT8050CLT1 / MMBT8050DLT1 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550CLT1 and MMBT8550DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050DLT1
MMBT8050C
MMBT8050D
MMBT8050
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MMBT8550CLT1
Abstract: MMBT8050CLT1 MMBT8050DLT1 MMBT8550DLT1 MMBT8550C MMBT8550D
Text: MMBT8550CLT1 / MMBT8550DLT1 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050CLT1 and MMBT8050DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
100mA
500mA
500mA,
50MHz
MMBT8550DLT1
MMBT8550C
MMBT8550D
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mmbt8050
Abstract: MMBT8550 MMBT8050 BR mmbt8050 sot-23 MMBT8050C MMBT8050D MMBT805 PNP Epitaxial Silicon Transistor sot-23 NPN/NPN/MMBT8050 BR
Text: MMBT8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage
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MMBT8050
MMBT8550
OT-23
MMBT8050C
MMBT8050D
mmbt8050
MMBT8050 BR
mmbt8050 sot-23
MMBT8050C
MMBT8050D
MMBT805
PNP Epitaxial Silicon Transistor sot-23
NPN/NPN/MMBT8050 BR
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MMBT8550D
Abstract: MMBT8550C MMBT8050C mmbt8050 MMBT8050D MMBT8550
Text: MMBT8550C / MMBT8550D 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary
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MMBT8550C
MMBT8550D
MMBT8050C
MMBT8050D
OT-23
MMBT8550D
mmbt8050
MMBT8050D
MMBT8550
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BR 8550
Abstract: PNP transistor 8550 BR 8550 ic ic 8550 PNP 8550 ST 8550 8550 pnp MMBT8550W 8550 pnp transistor c 8550 transistor
Text: MMBT8550W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 25 V Collector Base Voltage -VCBO 40 V Emitter Base Voltage -VEBO 6
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MMBT8550W
MMBT8550CW
MMBT8550DW
BR 8550
PNP transistor 8550
BR 8550 ic
ic 8550
PNP 8550
ST 8550
8550 pnp
MMBT8550W
8550 pnp transistor
c 8550 transistor
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MMBT8050D
Abstract: MMBT8050C MMBT8550C MMBT8550D
Text: MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550C and MMBT8550D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8050C
MMBT8050D
MMBT8550C
MMBT8550D
OT-23
MMBT8050D
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BR 8550
Abstract: br 8550 NPN Transistor 8550 NPN Transistor 8550 SOT-23 MMBT8550C 8550 sot-23 pnp 8550 MMBT8050C MMBT8050D s 8550 c
Text: MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8550C
MMBT8550D
MMBT8050C
MMBT8050D
OT-23
20MHz
BR 8550
br 8550 NPN Transistor
8550 NPN Transistor
8550 SOT-23
8550 sot-23 pnp
8550
s 8550 c
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mmbt8550
Abstract: MMBT8050 MMBT8050 BR MMBT8550C MMBT8550D
Text: MMBT8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage
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MMBT8550
MMBT8050
OT-23
MMBT8550C
MMBT8550D
mmbt8550
MMBT8050 BR
MMBT8550C
MMBT8550D
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MMBT8050D
Abstract: MMBT8050C MMBT8550C MMBT8550D
Text: MMBT8050C / MMBT8050D 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary
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MMBT8050C
MMBT8050D
MMBT8550C
MMBT8550D
OT-23
MMBT8050D
MMBT8550D
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