40530 transistor
Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
Text: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)
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MMA701-SOT89
MMA701
OT-89
MMA701
MMA701-SOT89TR
MMA701-SOT89EB,
40530 transistor
MMA701-SOT89TR
7905 sot89
MMA 7815
MMA701-SOT89
AN 7591 POWER AMPLIFIER
PH 0852
7814 transistor
AN 7591
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sot89 land pattern
Abstract: MMA701A HBT 01 - 05 c733 ALL SOT89 30 sot89
Text: MMA701A +24 dBm InGaP HBT Amplifier SOT89 OUTLINE Description: Features: The MMA701A is designed for common emitter, class A amplifier applications from 100 MHz to 2.5 GHz. Best performance is obtained over bandwidths not exceeding 10%. • • • • Lead Free and RoHS Compliant
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MMA701A
MMA701A
A17008
sot89 land pattern
HBT 01 - 05
c733
ALL SOT89
30 sot89
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sot89 land pattern
Abstract: MMA701A
Text: MMA701A +24 dBm InGaP HBT Amplifier SOT89 OUTLINE Description: Features: The MMA701A is designed for common emitter, class A amplifier applications from 100 MHz to 2.5 GHz. Best performance is obtained over bandwidths not exceeding 10%. • • • • Lead Free and RoHS Compliant
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MMA701A
MMA701A
sot89 land pattern
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MMA701-SOT89
Abstract: MCE Metelics
Text: MMA701-SOT89 Load Pull Frequency in MHz Vce=5.00V Freq. Mag Angle 824 837 849 869 881 894 910 930 960 1710 1740 1770 1790 1820 1850 1910 1930 1960 1990 2110 2140 2170 2400 2450 2500 2600 2700 0.199 0.192 0.191 0.221 0.201 0.177 0.211 0.223 0.231 0.171 0.211
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MMA701-SOT89
MCE Metelics
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PH 0852
Abstract: 40530 transistor
Text: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)
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MMA701-SOT89
MMA701
OT-89
MMA701
MMA701-SOT89TR
MMA701-SOT89EB,
PH 0852
40530 transistor
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MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
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foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
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DM6030HK
Abstract: diemat MMA701A C601A
Text: MMA601A +24 dBm InGaP HBT Amplifier C601A OUTLINE Description: Features: The MMA601A is designed for common emitter, class A amplifier applications from 100 MHz to 2.5 GHz. Best performance is obtained over bandwidths not exceeding 10%. • • • 14 dB gain typical at 2 GHz
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MMA601A
C601A
MMA601A
A17022
DM6030HK
diemat
MMA701A
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tunnel diode GaAs
Abstract: jesd 00E-12 MMA703 MMA701 MMA705 p-hemt GaAs tunnel diode JESD22*108 MMA704
Text: InGaP HBT Amplifiers Darlington Gain Blocks Medium Power Amplifiers Short Form Catalog Winter 2004 – 2005 About Aeroflex / Metelics Quality & Performance Designed for You Aeroflex / Metelics, a division of Aeroflex’s Microelectronic Solutions group, is a leading supplier of InGaP HBT
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DM6030HK
Abstract: diemat MMA60 MMA601A
Text: MMA601A +24 dBm InGaP HBT Amplifier C601A OUTLINE Description: Features: The MMA601A is designed for common emitter, class A amplifier applications from 100 MHz to 2.5 GHz. Best performance is obtained over bandwidths not exceeding 10%. • • • 14 dB gain typical at 2 GHz
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MMA601A
C601A
MMA601A
DM6030HK
diemat
MMA60
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