MJ11015 TRANSISTOR Search Results

MJ11015 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MJ11015 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MJ11015 Abstract: No abstract text available Text: MJ11015 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI MJ11015 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA MAXIMUM RATINGS IE 30 A VCE -120 V	Original	MJ11015 MJ11015 204AA	PDF
MJ11015G Abstract: MJ11016G mj110156 MJ11016 MJ11015 MJ11012 MJ11012G T172 MJ1101x Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11015, MJ11015G MJ11016G mj110156 MJ11015 MJ11012 MJ11012G T172 MJ1101x	PDF
Mj11015 Abstract: No abstract text available Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D Mj11015	PDF
MJ11015G Abstract: MJ11016G MJ11015 mj110156 MJ11012 MJ11012G MJ11016 Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 O-204AA MJ11015G MJ11016G MJ11015 mj110156 MJ11012 MJ11012G	PDF
MJ11016 Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015 Text: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic	Original	MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016 MJ11011, MJ11011 MJ11012 MJ11013 P003N MALAYSIA MJ11015	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP MJ11016 NPN SILICON PLANAR DARLINGTON POWER TRANSISTORS Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.	Original	MJ11015 MJ11016 C-120 Rev310310E	PDF
MJ11015 Abstract: No abstract text available Text: PNP SILICON DARLINGTON TRANSISTOR MJ11015 SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)	Original	MJ11015 -120V MJ11015	PDF
MJ11015 Abstract: MJ11012 MJ11016 mj11016 mexico Text: ON Semiconductort PNP High-Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — • • hFE = 1000 Min @ IC – 20 Adc	Original	MJ11015 MJ11016 MJ11012 r14525 MJ11012/D MJ11015 MJ11012 MJ11016 mj11016 mexico	PDF
MJ11015G Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015 Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc	Original	MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D MJ11015G MJ11016G MJ11015 MJ11012 MJ11012G npn darlington transistor pnp 3015	PDF
pin diagram of ic 4066 Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.	Original	MJ11015, MJ11015 MJ11016 pin diagram of ic 4066 ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors	PDF
MJ11015 Abstract: MJ11015-11016 MJ11016 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP MJ11016 NPN SILICON PLANAR DARLINGTON POWER TRANSISTORS Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.	Original	MJ11015 MJ11016 C-120 Rev310310E MJ11015-11016	PDF
mj11015 Abstract: pnp resistor mj11012 transistor MJ11016 Text: ON Semiconductort PNP High−Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — hFE = 1000 Min @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor	Original	MJ11015 MJ11012 MJ11016 pnp resistor transistor MJ11016	PDF
Untitled Abstract: No abstract text available Text: MJ11015 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200	Original	MJ11015	PDF
100 amp npn darlington power transistors Abstract: mj11015 MJ11016 transistor tl 187 MJ11013 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts 10 amp npn darlington power transistors MJ11016 data sheet Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	MJ11012 MJ11014 MJ11016 MJ11013 MJ11015 MJ11012/D* MJ11012/D 100 amp npn darlington power transistors mj11015 MJ11016 transistor tl 187 MJ11013 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts 10 amp npn darlington power transistors MJ11016 data sheet	PDF

PNP TRANSISTOR 1k Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A	Original	-120V MJ11016 -120V; PNP TRANSISTOR 1k transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016	PDF
MJ11015 Abstract: mj11011 2N6285 2N6286 2N6287 CP547 MJ11013 Text: PROCESS CP547 Central Power Transistor TM Semiconductor Corp. PNP - Darlington Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization	Original	CP547 MJ11011 2N6285 MJ11013 2N6286 MJ11015 2N6287 2N6285 2N6286 2N6287 CP547	PDF
MJ11011 Abstract: MJ11014 Text: MJ11011/13/15 MJ11012/14/16 SGS-THOMSON MGMlLIOTIlMCt COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic	OCR Scan	MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11011, MJ11011	PDF
MJ11015 Abstract: MJ11016 MJ11014 MJ11012 k 1 transistor npn darlington transistor 200 watts motorola darlington power transistor mj11015 transistor transistor MJ11016 MJll016 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11013 High-Current Complementary Silicon Transistors MJ11015 NPN MJ11012 . . . for use as output devices in complementary general purpose amplifier applica tions. • High DC Current Gain — hpg = 1000 Min @ Iq - 20 Adc	OCR Scan	MJ11013 MJ11015 MJ11012 MJ11014 MJ11016* MJ11015 MJ11016 k 1 transistor npn darlington transistor 200 watts motorola darlington power transistor mj11015 transistor transistor MJ11016 MJll016	PDF
mj11015 Abstract: MJ11014 MJ11011 Text: r Z T S G S -T H O M MJ11011/1 3/15 MJ11012/14/16 S O N mlM MiniaMgnigCTfsiMiKe^ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016are silicon	OCR Scan	MJ11011/1 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016are MJ11011, MJ11011	PDF
mj11015 Abstract: mj11011 Text: MOTOROLA SC 12E 0 § b3b?2S4 00ÖS074 T \| XSTRS/R F T-33^9 7 ^ 3 3 -3 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP npn' Ml 11011 Ml 11013 MJ11015 Ml 11012 MJ11014 MJ11016 H IG H -C U R R E N T C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S 30 A M P E R E	OCR Scan	MJ11015 MJ11014 MJ11016 mj11015 mj11011	PDF
mj11011 Abstract: No abstract text available Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP M J11013 High-C urrent Com plem entary Silicon Transistors M J11015 NPN M J11012 . . . for use as output devices in complementary general purpose amplifier applica tions. • •	OCR Scan	MJ11012/D J11013 J11015 J11012 J11014 mj11011	PDF
MJ11015 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J11013 M J11015 High-Current Complementary Silicon Transistors i l DM M J11012 . . . for use as output devices in complementary general purpose amplifier applica tions. M J11014 • High DC Current Gain — hpE = 1000 Min @ Iq - 20 Adc	OCR Scan	MJ11012 MJ11013 MJ11014 MJ11015 MJ11O10 J11013 J11015 J11012 J11014 J11016*	PDF
mj11011 Abstract: MJ11016 MJ11013 MJ11014 MJ11015 MJ11012 Variable resistor 10K ohm transistor MJ11016 Text: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. Collector-Emitter Voltage ^C EO COIIector-Base Voltage V C BO Emitter-Base Voltage 30 AMPERE COMPLEMENTARY	OCR Scan	MJ11011 MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 MJ11014 MJ11016 MJ11012 Variable resistor 10K ohm transistor MJ11016	PDF
MJ11011 Abstract: 2N6282 MJ4032 MOTOROLA 2N62B3 2N62B Text: MOTOROLA SC 6367255 MOTOROLA SC DE^jj b3fcj7H55 0 0 3 7 ^ 7 3H OIODES/OPTOÏ C D IO D ES /O PTO 34C 7 *3 3 -0 I SILICON POWER TRANSISTOR DICE continued) 2C6284 DIE NO. — NPN LINE SOURCE — PL500.402 NPN q 3 7 9 4 7 2C6287 / d ie n o . — pnp LINE SOURCE — PL500.403	OCR Scan	b3fcj7H55 PL500 2C6284 2N6282 2N62B3 2N6284 MJ4033 MJ4034 2C6287 MJ11011 MJ4032 MOTOROLA 2N62B	PDF

MJ11015 TRANSISTOR Search Results

MJ11015 TRANSISTOR Result Highlights (5)

MJ11015 TRANSISTOR Datasheets Context Search

MJ11015

MJ11015G

Mj11015

MJ11015G

MJ11016

Untitled

MJ11015

MJ11015

MJ11015G

pin diagram of ic 4066

MJ11015

mj11015

Untitled

100 amp npn darlington power transistors

PNP TRANSISTOR 1k

MJ11015

MJ11011

MJ11015

mj11015

mj11015

mj11011

MJ11015

mj11011

MJ11011