MJ 1505 Search Results

MJ 1505 Result Highlights (5)

Part	Manufacturer	Description
MC1505L	Rochester Electronics LLC	A/D Converter
UPD78F1505AGC-UEU-AX	Renesas Electronics Corporation	16-bit Low-power Microcontrollers for Applications Using LCD Display (Non Promotion)
UPD78F1505AGC(R)-UEU-AX	Renesas Electronics Corporation	16-bit Low-power Microcontrollers for Applications Using LCD Display (Non Promotion)
ZL1505ALNNT1	Renesas Electronics Corporation	Synchronous Step-Down MOSFET Drivers, DFN, /Reel
ZSPM1505KIT01V1P0	Renesas Electronics Corporation	Evaluation Kit for the ZSPM15xx

MJ 1505 Price and Stock

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Intel Corporation FJ8071505204501S RMJ6 CPU - Central Processing Units Intel Core i7-1370P Processor (24M Cache, up to 5.20 GHz) FC-BGA16F, Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FJ8071505204501S RMJ6					1 $549.36 10 $532.82 100 $532.82 1000 $532.82 10000 $532.82	Get Quote
Intel Corporation FJ8071505204505SRMJL CPU - Central Processing Units Intel Core i7-1370PE Processor (24M Cache, up to 4.80 GHz) FC-BGA16F, Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FJ8071505204505SRMJL					1 $553.39 10 $536.73 100 $536.73 1000 $536.73 10000 $536.73	Get Quote
Intel Corporation FJ8071505203800S RMJ0 CPU - Central Processing Units Intel Core i7-13620H Processor (24M Cache, up to 4.90 GHz) FC-BGA16F, Tray
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Mouser Electronics	FJ8071505203800S RMJ0					1 $629.95 10 $610.99 100 $610.99 1000 $610.99 10000 $610.99	Get Quote
Intel Corporation FJ8071505204200S RMJ4 CPU - Central Processing Units Intel Core i9-13900H Processor (24M Cache, up to 5.40 GHz) FC-BGA16F, Tray
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Mouser Electronics	FJ8071505204200S RMJ4					1 $751.69 10 $740.02 100 $740.02 1000 $740.02 10000 $740.02	Get Quote
Intel Corporation FJ8071505204101S RMJ3 CPU - Central Processing Units Intel Core i9-13900HK Processor (24M Cache, up to 5.40 GHz) FC-BGA16F, Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FJ8071505204101S RMJ3					1 $848.09 10 $848.09 100 $848.09 1000 $848.09 10000 $848.09	Get Quote

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MJ 1505 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NGB8207B Abstract: No abstract text available Text: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8207N, NGB8207BN NGB8207N/D NGB8207B
8207NG Abstract: AYWW marking code IC Text: NGB8207N Product Preview Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8207N NGB8207N/D 8207NG AYWW marking code IC
1505C Abstract: 405C NGB8207N NGB8207NT4G 8207NG Text: NGB8207N Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	PDF	NGB8207N NGB8207N/D 1505C 405C NGB8207N NGB8207NT4G 8207NG
Untitled Abstract: No abstract text available Text: NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB8207N, NGB8207BN NGB8207N/D
G15N60 Abstract: G15N60S1G NGTG15N60 NGTB15N60S1 Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	PDF	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1
NGTB15N60S1EG Abstract: 15N60S1G Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	PDF	NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G
Untitled Abstract: No abstract text available Text: Bfihjlgu_^bkdh\u_d_jZfbq_kdb_dhg^_gkZlhju L_fi_jZlmjgh-dhfi_gkbjh\Zggu_ \ukhdhc^h[jhlghklvx \	Original	PDF	Q1000,
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
MOSFET 300A 400v Abstract: RHR15060 HA 3089 RHR15040 RHR15050 RHRU15040 RHRU15050 RHRU15060 SINGLE LEAD TO-218 ru15060 Text: HA RR IS S E N I C O N D S E CT OR b3E D £11 HARRIS U l s E M ' o o . D u c ’ • 4302273, OOMfllS'i tl .2 * H A S R H R U 15040 R H R U 15050, R H R U 15060 0 R PRELIMINARY 150A, 400V - 600V Hyperfast Diode August 1993 Features • Package SINGLE LEAD TO-218 STYLE	OCR Scan	PDF	RHRU15040 RHRU15050, RHRU15060 RHRU15040, RHRU15050 TA49071) 1-800-4-HARRIS MOSFET 300A 400v RHR15060 HA 3089 RHR15040 RHR15050 RHRU15060 SINGLE LEAD TO-218 ru15060
CD 1517 Abstract: USSR DIODE IRFI634G Text: PD-9.738 International S Rectifier IRFI634G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 250V ^DS on = 0 -4 5 & lD = 5.6A	OCR Scan	PDF	IRFI634G O-220 CD 1517 USSR DIODE IRFI634G
1xys Abstract: 90a944 Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200	OCR Scan	PDF	60N60 OT-227 1xys 90a944
1RF620 Abstract: 1RF620S 317H IRF620 RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015 Text: PD-9.317H International IiorIRectifier IRF620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vdss=200V R DS{on - 0 - 8 0 ^ lD = 5.2A Description DATA SHEETS	OCR Scan	PDF	IRF620 O-220 2SRF620S 1RF620 1RF620S 317H RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015
1RF640 Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note Text: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA	OCR Scan	PDF	IRF640 T0-220 O-220 1RF640 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s 1D11A IRF640 smd IRF640 applications note
smd diode 1336 Abstract: DIODE 1334 smd 1RL530 smd diode 1334 562C AN-994 IRL530 IRL530S SMD-220 Diode Marking 016 Text: PD-9.562C International J& R \ Rectifier IRL530- HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on) Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling	OCR Scan	PDF	IRL530' T0-220 O-220 50Kfl smd diode 1336 DIODE 1334 smd 1RL530 smd diode 1334 562C AN-994 IRL530 IRL530S SMD-220 Diode Marking 016

1RF520 Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012 Text: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2	OCR Scan	PDF	IRF520 T0-220 1RF520 AVW smd smd ht1 AN-994 IRF520S SMD-220 ScansUX1012
5210s Abstract: MOSFET smd marking kl 1ER2 AN-994 IRL510 IRL510S SMD-220 arej Text: International ü ë ]Rectifier PD-9.560C IRL510 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling	OCR Scan	PDF	IRL510 O-220 5210s MOSFET smd marking kl 1ER2 AN-994 IRL510S SMD-220 arej
1RFZ48 Abstract: RFZ48 RG-910 AN-994 IRFZ48 IRFZ48S SMD-220 d72a Text: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q	OCR Scan	PDF	IRFZ48 O-220 IRFZ48S 1RFZ48 RFZ48 RG-910 AN-994 SMD-220 d72a
1RFZ48 Abstract: RFZ48 smd JSs diode RFZ4 Text: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q	OCR Scan	PDF	O-220 IRFZ48 IRFZ48S 1RFZ48 RFZ48 smd JSs diode RFZ4
mj 1504 transistor Abstract: transistor mj 1504 transistors mj 1504 of mj 1504 transistor Text: Philips Semiconductors Preliminary specification PowerMOS transistors PHP6NA60E Low capacitance Avalanche energy FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching	OCR Scan	PDF	PHP6NA60E T0220AB) mj 1504 transistor transistor mj 1504 transistors mj 1504 of mj 1504 transistor
A6165 Abstract: fr1s 15C6 CAB-54C JD 1806 6605 11C6 CAB32 cab-47 mn 9105 Text: Lrttte Rebete are one of Ohmite's more economical lines o i low wattage resistors. Constructed of a pure carton film deposited on a higi\-flrade c eram c body, these unit* orter better stability perfor m ance than comparable carbon composition resistors.	OCR Scan	PDF	10-1M CAB-23? CAB-43F CAB-24F CAB-44f CA3-14F 0-39-47K 3XM00K 50-100K A6165 fr1s 15C6 CAB-54C JD 1806 6605 11C6 CAB32 cab-47 mn 9105
1rf1010 Abstract: J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10 Text: PD-9.814 International K R e ctifie r IR F 1 Ö 10 HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling	OCR Scan	PDF	IRF10Ã O-220 1rf1010 J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10
diode B14A Abstract: B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24 IRFP450 Text: International Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 500V ^DS on = 0 -4 0 Í2	OCR Scan	PDF	IRFP450 O-247 T0-220 O-218 diode B14A B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24
315J Abstract: IRF720 ScansUX1018 Text: PD-9.315J International i“r Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 400V ^DS on — 1 - 8 0 lD = 3.3A Description DATA	OCR Scan	PDF	IRF720 O-220 150KCÃ 315J ScansUX1018
irf630 Abstract: RD161 Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA	OCR Scan	PDF	IRF630 O-220 irf630 RD161

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MJ 1505 Search Results

MJ 1505 Result Highlights (5)

MJ 1505 Price and Stock

Intel Corporation FJ8071505204501S RMJ6

Intel Corporation FJ8071505204505SRMJL

Intel Corporation FJ8071505203800S RMJ0

Intel Corporation FJ8071505204200S RMJ4

Intel Corporation FJ8071505204101S RMJ3

MJ 1505 Datasheets Context Search

NGB8207B

8207NG

1505C

Untitled

G15N60

NGTB15N60S1EG

Untitled

ksd 302 250v, 10a

MOSFET 300A 400v

CD 1517

1xys

1RF620

1RF640

smd diode 1336

1RF520

5210s

1RFZ48

1RFZ48

mj 1504 transistor

A6165

1rf1010

diode B14A

315J

irf630