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    MG75Q2 Price and Stock

    Toshiba America Electronic Components MG75Q2YS1-AC.F

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    Bristol Electronics MG75Q2YS1-AC.F 48
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    Toshiba America Electronic Components MG75Q2YS51

    INSULATED GATE BIPOLAR TRANSISTOR, 100A I(C), 1200V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG75Q2YS51 2
    • 1 $42.9
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    MG75Q2 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG75Q2DS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG75Q2YK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG75Q2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 75A Scan PDF
    MG75Q2YL1 Unknown Scan PDF
    MG75Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS11 Toshiba GTR Module: Silicon N-Channel IGBT Scan PDF
    MG75Q2YS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG75Q2YS42 Toshiba N channel IGBT Original PDF
    MG75Q2YS42 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG75Q2YS50 Toshiba N channel IGBT Original PDF
    MG75Q2YS50 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG75Q2YS51 Toshiba N channel IGBT Original PDF
    MG75Q2YS51 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG75Q2YS52 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Scan PDF

    MG75Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MG75Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS51 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Inductive load l Low saturation voltage : CE (sat) = 3.6 V (Max) l Enhancement-mode


    Original     		PDF MG75Q2YS51 2-108D1A

    MG75Q2YS50

    Abstract: IGBT control circuit
    Text: MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Iinductive load l Low saturation voltage : VCE (sat) = 3.6 V (Max) l Enhancement-mode


    Original     		PDF MG75Q2YS50 2-94D4A MG75Q2YS50 IGBT control circuit

    MG75Q2YS42

    Abstract: No abstract text available
    Text: MG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE(sat) = 4.0V (Max)


    Original     		PDF MG75Q2YS42 2-108A2A MG75Q2YS42

    Untitled

    Abstract: No abstract text available
    Text: MG75Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage+ : VCE(sat) = 4.0V (Max)


    Original     		PDF MG75Q2YS40 2-94D1A

    MG75Q2YS50

    Abstract: MG75q 16tf
    Text: MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Iinductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode


    Original     		PDF MG75Q2YS50 2-94D4A MG75Q2YS50 MG75q 16tf

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS50 Tempe30

    MG75Q2YS52

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MG75Q2YS52 MG75Q2YS52 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage : v CE(sat) = 3-ev (Max.)


    OCR Scan     		PDF MG75Q2YS52 2-109C4AGE 10//s MG75Q2YS52

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 —FAST —ON —TAB #110 High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.)


    OCR Scan     		PDF MG75Q2YS40 2-94D1A 11in---

    MG75Q2YS42

    Abstract: 2805 diode bridge diode 3a05
    Text: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG75Q2YS42 2-108A2A MG75Q2YS42 2805 diode bridge diode 3a05

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE • « ■ m SILICON N CHANNEL IGBT Mr ■ Mr HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.) Low Saturation Voltage ^ v CE(sat) “ 4.0V (Max.)


    OCR Scan     		PDF MG75Q2YS42

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS50 TjS125

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q2YS51 TOSHIBA GTR MODULE • « ■ a SILICON N CHANNEL IGBT Mr ■ mm Mr ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : t f = 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS51 JunctioG75Q2YS51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M f i 7a > ; n 7 Y < ; n n •« ■ Mr ■ Mr ^wr HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75Q2YS40

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG75Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG75Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load Low Saturation Voltage : ^ CE (sat) =3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS50 l25ec

    X15V

    Abstract: MG75Q2YS51
    Text: TOSHIBA MG75Q2YS51 MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG75Q2YS51 2-108D1A 10//s X15V MG75Q2YS51

    X15V

    Abstract: DT700 MG75Q2YS50 MG75Q2 mg75q2ys
    Text: TOSHIBA MG75Q2YS50 MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG75Q2YS50 2-94D4A 10//s X15V DT700 MG75Q2YS50 MG75Q2 mg75q2ys

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG75Q2YS52 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS52 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. / ^ \ T _3 _ J . * _ T _ 3 ig /iu u u c u v e L/uau


    OCR Scan     		PDF MG75Q2YS52

    IC-75

    Abstract: MG75Q2YS52
    Text: TO SH IBA MG75Q2YS52 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG75Q2YS52 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig/iuuucuve L/uau Low Saturation Voltage


    OCR Scan     		PDF MG75Q2YS52 2-109C4A IC-75 MG75Q2YS52

    MG75Q2YS40

    Abstract: VGEV12
    Text: TOSHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A ST -O N -T A B #110 High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75Q2YS40 2-94D1A MG75Q2YS40 VGEV12

    MG75Q2YS11

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .0[is Max. • Low saturation: V CE tn- = 0.5 n s (Max.)


    OCR Scan     		PDF MG75Q2YS11 PW03870796 MG75Q2YS11

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS51 10/us

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q2YS52 TENTATIVE TOSHIBA GTR MODULE •« ■ a HIGH POWER SWITCHING APPLICATIONS Mr SILICON N CHANNEL IGBT ■ Mr mt MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)


    OCR Scan     		PDF MG75Q2YS52 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/is(Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.)


    OCR Scan     		PDF MG75Q2YS42