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    MG150Q Price and Stock

    Toshiba America Electronic Components MG150Q1JS9

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG150Q1JS9 23 1
    • 1 $102
    • 10 $94.146
    • 100 $90.2292
    • 1000 $90.2292
    • 10000 $90.2292
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    Quest Components MG150Q1JS9 18
    • 1 $110.5
    • 10 $102
    • 100 $102
    • 1000 $102
    • 10000 $102
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    Toshiba America Electronic Components MG150Q2YS11

    150 A, 1200 V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG150Q2YS11 2
    • 1 $375.4228
    • 10 $375.4228
    • 100 $375.4228
    • 1000 $375.4228
    • 10000 $375.4228
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    Toshiba America Electronic Components MG150Q2YS50

    TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,1.2KV V(BR)CES,200A I(C)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG150Q2YS50 2
    • 1 $97.5
    • 10 $97.5
    • 100 $97.5
    • 1000 $97.5
    • 10000 $97.5
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    Toshiba America Electronic Components MG150Q1JS65HA

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MG150Q1JS65HA 180
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    Toshiba America Electronic Components MG150Q2YS51(AC,G)

    Electronic Component
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    ComSIT USA MG150Q2YS51(AC,G) 23
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    MG150Q Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG150Q1JS40 Toshiba TRANS IGBT MODULE N-CH 1200V 150A 5(2-109C3A) Original PDF
    MG150Q1JS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG150Q1JS40 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS) Scan PDF
    MG150Q2YK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG150Q2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG150Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150Q2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 150A Scan PDF
    MG150Q2YL1 Unknown Scan PDF
    MG150Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG150Q2YS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG150Q2YS40 Toshiba TRANS IGBT MODULE N-CH 1200V 150A 7(2-109C1A) Scan PDF
    MG150Q2YS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG150Q2YS40 Toshiba GTR Module Silicon N-Channel IGBT Scan PDF
    MG150Q2YS50 Toshiba N channel IGBT Original PDF
    MG150Q2YS50 Toshiba TRANS IGBT MODULE N-CH 1200V 200A 7(2-95A4A) Original PDF
    MG150Q2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG150Q2YS50 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

    MG150Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG150Q2YS40

    Abstract: No abstract text available
    Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG150Q2YS40 2-109C1A MG150Q2YS40

    Untitled

    Abstract: No abstract text available
    Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max)


    Original     		PDF MG150Q2YS40 2-109C1A

    TOSHIBA IGBT

    Abstract: MG150Q2YS65H PC890
    Text: MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm • High input impedance • Enhancement-mode • The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG150Q2YS65H 2-95A4A 150transportation TOSHIBA IGBT MG150Q2YS65H PC890

    IGBT MG150Q2YS50

    Abstract: MG150Q2YS50
    Text: MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original     		PDF MG150Q2YS50 2-95A4A 30transportation IGBT MG150Q2YS50 MG150Q2YS50

    MG150Q1JS44

    Abstract: 1S1885 diode MG150Q1JS
    Text: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.


    Original     		PDF MG150Q1JS44 2-109C1A MG150Q1JS44 1S1885 diode MG150Q1JS

    MG150Q2YS51

    Abstract: No abstract text available
    Text: MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original     		PDF MG150Q2YS51 MG150Q2YS51

    IGBT MG150Q2YS50

    Abstract: Mg150q2ys50
    Text: MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG150Q2YS50 2-95A4A IGBT MG150Q2YS50 Mg150q2ys50

    MG150Q2YS40

    Abstract: No abstract text available
    Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		PDF MG150Q2YS40 2-109C1A MG150Q2YS40

    MG150Q2YS40

    Abstract: CV200
    Text: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)


    OCR Scan     		PDF MG150Q2YS40 2-109C1A MG150Q2YS40 CV200

    MG150Q2YK1

    Abstract: No abstract text available
    Text: MG150Q2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


    OCR Scan     		PDF MG150Q2YK1 MG150Q2YK1

    transistor jc 817

    Abstract: MG150q2yk1 470G jc 817
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150Q2YK1 TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm fi-FAST-ON-TAB t 1 1 0 FEATURES: \ JAPAN » 3~M5 P_ 0 & 5 ÌIO .3 . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling


    OCR Scan     		PDF MG150Q2YK1 109B1A 00A/jus transistor jc 817 MG150q2yk1 470G jc 817

    MG150

    Abstract: MG150Q2YS40 56i2
    Text: TOSHIBA MG150Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)


    OCR Scan     		PDF MG150Q2YS40 02YS40 MG150 MG150Q2YS40 56i2

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG150Q2YS51 Mfii i ; n f » 9 v « i TOSHIBA GTR MODULE •« ■ SILICON N CHANNEL IGBT ■ agr ■ mm ht ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG150Q2YS51

    DIODE JS.4

    Abstract: No abstract text available
    Text: T O SH IB A MG150Q1JS40 TOSHIBA GTR MODULE m SILICON N CHANNEL IGBT <;i t r i m K d n HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .5 ^ s Max. trr = 0.5/iis (Max.) • Low Saturation Voltage • V c E (sa t) = 4*0V (Max.)


    OCR Scan     		PDF MG150Q1JS40 DIODE JS.4

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG150Q2YS50 50Q2YS50 TjS125Â

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage


    OCR Scan     		PDF MG150Q1JS40 150Q1JS40

    50Q2

    Abstract: No abstract text available
    Text: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.


    OCR Scan     		PDF MG150Q2YS40 50Q2YS40 2-109C1A 50Q2

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG150Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG150Q2YS51 Temperat30000 TjS125

    MG150Q1JS

    Abstract: No abstract text available
    Text: TOSHIBA MG150Q1JS40 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG1 5 0 Q 1 J S 4 0 HIGH PO W E R SW ITCHING APPLICATIONS. C HO PPER APPLICATIONS. • H igh In p u t Im pedance • H igh Speed : t f = 0 .5 /; s M ax. trr = 0.5/^s (Max.) • Low Satu ration V oltage


    OCR Scan     		PDF MG150Q1JS40 MG150Q1JS

    Untitled

    Abstract: No abstract text available
    Text: MG150Q1JS40 HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S. U n it in m m C H O PPER A PPLIC A TIO N S. H igh In p u t Im pedance H igh Speed : tf= 0 .5 ,u s M ax. t rr = 0 .5 / î s (M ax.) Low S a tu ra tio n V oltage ; v C E (sa t) = 4 ° v (M ax.) E nhancem ent-M ode


    OCR Scan     		PDF MG150Q1JS40 TjS125

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG150Q2YS50 TjS125

    150Q2YS51

    Abstract: No abstract text available
    Text: TOSHIBA MG150Q2YS51 T O S H IB A G T R M O D U L E S IL IC O N N C H A N N E L IG B T M G 150Q2YS51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S High Input Impedance H ighspeed : tf=0.3^/s M ax. @Inductive Load


    OCR Scan     		PDF MG150Q2YS51 150Q2YS51 150Q2YS51

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage


    OCR Scan     		PDF MG150Q1JS40 150Q1JS40

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG150Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG150Q2YS51 50Q2YS51