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    Toshiba America Electronic Components MG150Q2YS51(AC,G)

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    ComSIT USA MG150Q2YS51(AC,G) 23
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    50Q2YS51 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


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    PDF MG150Q2YS51 Temperat30000 TjS125

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


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    PDF MG150Q2YS51 50Q2YS51

    MG*Q2YS51

    Abstract: 50Q2 MG150Q MG150Q2YS51 MG150
    Text: TO SHIBA 50Q2YS51 MG1 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


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    PDF MG150Q2YS51 50Q2YS51 MG*Q2YS51 50Q2 MG150Q MG150Q2YS51 MG150