TRANSISTOR 2341
Abstract: xp950nm
Text: CRO MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709D is NPN silicon photo transistor with external base connection and built in a standard T -l 3/4 5mm light rejective epoxy package. This device is suitable for use in a light sersor of the industial
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MEL709D
MEL709D
100mA
200mW
950nm
100pA
950nm.
TRANSISTOR 2341
xp950nm
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Untitled
Abstract: No abstract text available
Text: MICRO ELECTRONICS MIE LT» 1,0*11700 D 0000=10=1 3 HMEHK MEL709D NPN PLANAR PHOTO-TRANSISTOR The MEL709D Is silicon phototransistor with external base connection and built in a standard T-l 3/4 5mm0 light rejective filter epoxy package. This device is suitable for use in a light
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MEL709D
MEL709D
100mA
200raW
100SC
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MEL709D
Abstract: No abstract text available
Text: MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION 04.98 0.196 MEL709D is NPN silicon photo transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. Ali dimension in mm(inch) No Scale ToL : +/-0.3mm r0.7(0.03)
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MEL709D
200mW
950nm*
950nm.
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MEL709D
Abstract: TB 006 sec 73 s
Text: CKO MÜL'/ÜVLf NPN SILICON PHOTO TRANSISTOR DESCRIPTION *4.98 0.196 MEL709D is NPN silicon photo transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. 87 (0.34) A ll dim ension in m m (inch) No Scale
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MEL709D
950nm.
TB 006
sec 73 s
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L303A
Abstract: DL78 L 31A MA1515 EL79D
Text: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a
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ML303
ML303B
ML308
ML308A
L-303a
-308C
MEL78
MEL78D
MEL79
EL79D
L303A
DL78
L 31A
MA1515
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