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    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 50A, 6.5mΩ General Description Features The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.


    Original     		PDF MDD1654 MDD1654

    MDD1654

    Abstract: mdd1654 MOSFET MDD*1654 MagnaChip Semiconductor Ltd. MDD1654 MDD1654R 30V 20A power p MOSFET MDD165 MagnaChip Semiconductor
    Text: 30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ Features General Description The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and


    Original     		PDF MDD1654 MDD1654 mdd1654 MOSFET MDD*1654 MagnaChip Semiconductor Ltd. MDD1654 MDD1654R 30V 20A power p MOSFET MDD165 MagnaChip Semiconductor

    MDD1654

    Abstract: MDD*1654 mdd1654 MOSFET MagnaChip Semiconductor Ltd. MDD1654 MDD1654RH MDD165 30V 20A power p MOSFET TO 252 dimensions
    Text: Single N-channel Trench MOSFET 30V, 55A, 6.0mΩ General Description Features The MDD1654 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load


    Original     		PDF MDD1654 MDD1654 MDD*1654 mdd1654 MOSFET MagnaChip Semiconductor Ltd. MDD1654 MDD1654RH MDD165 30V 20A power p MOSFET TO 252 dimensions