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    MBRP20030CTL Search Results

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    MBRP20030CTL Price and Stock

    Rochester Electronics LLC MBRP20030CTL

    DIODE MOD SCHOT 30V POWERTAP2
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    DigiKey MBRP20030CTL Tray 23
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    onsemi MBRP20030CTL

    DIODE MOD SCHOT 30V POWERTAP2
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    DigiKey MBRP20030CTL Tray 25
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    Rochester Electronics MBRP20030CTL 712 1
    • 1 $12.85
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    • 100 $12.08
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    Aptina Imaging MBRP20030CTL

    Rectifier Diode Schottky 30V 200A 3-Pin(3+Tab) POWER TAP II Tray
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    Verical MBRP20030CTL 710 24
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    onsemi MBRP20030CTLG

    RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 2 ELEMENT, 100A, 30V V(RRM), SILICON
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    Quest Components MBRP20030CTLG 1,267
    • 1 $32.5
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    MBRP20030CTLG 1
    • 1 $33
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    Motorola Semiconductor Products MBRP20030CTLG

    RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 2 ELEMENT, 100A, 30V V(RRM), SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MBRP20030CTLG 75
    • 1 $32.5
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    • 100 $28.75
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    MBRP20030CTL Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRP20030CTL Motorola POWERTAPPII SWITCHMODE Power Rectifirer Original PDF
    MBRP20030CTL On Semiconductor POWERTAP II SWITCHMODE Power Rectifier Original PDF
    MBRP20030CTL Microsemi Schottky Rectifier Scan PDF
    MBRP20030CTL/D On Semiconductor 200 AMPERES 30 VOLTS Original PDF
    MBRP20030CTL-D On Semiconductor POWERTAP II SWITCHMODE Power Rectifier Original PDF
    MBRP20030CTLG ON Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 100A PWRTAP2 Original PDF

    MBRP20030CTL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRP20030CTL

    Abstract: b2003
    Text: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRP20030CTL POWERTAP II SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following


    Original     		PDF MBRP20030CTL/D MBRP20030CTL MBRP20030CTL b2003

    Untitled

    Abstract: No abstract text available
    Text: MBRP20030CTL Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features • • • •


    Original     		PDF MBRP20030CTL MBRP20030CTL/D

    Untitled

    Abstract: No abstract text available
    Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —


    Original     		PDF MBRP20030CTL

    Untitled

    Abstract: No abstract text available
    Text: MBRP20030CTL Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: http://onsemi.com Features


    Original     		PDF MBRP20030CTL MBRP20030CTL/D

    MBRP20030CTL

    Abstract: No abstract text available
    Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP20030CTL r14525 MBRP20030CTL/D MBRP20030CTL

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MBRP20030CTL Designer's Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon


    Original     		PDF MBRP20030CTL/D MBRP20030CTL MBRP20030CTL/D*

    MBRP20030CTL

    Abstract: No abstract text available
    Text: MBRP20030CTL Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features • • • •


    Original     		PDF MBRP20030CTL MBRP20030CTL/D MBRP20030CTL

    Untitled

    Abstract: No abstract text available
    Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: • Dual Diode Construction —


    Original     		PDF MBRP20030CTL

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    660CT

    Abstract: MUR1620CT MBR2
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1N4001 − 4007 Lead Mounted Rectifiers 50−1000 Volts Diffused Junction . . . . . . . . . . . . . . . . . . . . . . 29 1N4933 − 4937 Fast Recovery Rectifiers 1.0 Ampere 50−600 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31


    Original     		PDF 1N4001 1N4933 1N5400 1N5408 1N5817, 1N5820, 80SQ045N MBR0520LT1, MBR0520LT3 MBR0530T1, 660CT MUR1620CT MBR2

    MBRM110LT1

    Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360
    Text: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3


    Original     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 MBRM110LT1 MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360

    418B-04

    Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
    Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35


    Original     		PDF MBR0520LT1, MBR120LSFT1, MBRM110LT1, MBRA210LT3 MBRS130LT3 MBRS410LT3 MBRD835L MBRD1035CTL MBR2030CTL MBRB2535CTL 418B-04 MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460

    mur860 diode

    Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
    Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821


    Original     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRP20030CTL POWERTAP II SWITCHMODE™ Power R ectifier Motorola Preferred Device The S W IT C H M O D E P ow er R e ctifier uses the S cho ttky B arrier princip le w ith


    OCR Scan     		PDF MBRP20030CTL/D MBRP20030CTL 1/4-20UNC-2B 1/4-20U 357C-03

    b20030

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P roduct Preview MBRP20030CTL POWERTAP II SWITCHMODE™ Power Rectifier M o to ro la P re fe rre d D evice LOW Vp S C H O T T K Y B A R R IE R The SW ITCHMO DE Power R ectifier uses the Schottky Barrier principle with


    OCR Scan     		PDF MBRP20030CTL 357C-03 b20030

    103A

    Abstract: CPT30230 MBRP20030CTL
    Text: Schottky Powermod CPT30230 V , -I- Baseplate A=Common Anode T¥ Baseplate Common Cathode j_ I d=i: H = t 1 TT E Microsemi Industry Catalog Number P art Number oH ^ N o Baseplate D=Doubler Dim. Inches Min. A B C E F G H N Q R U V W M illim eters Max. -3.630


    OCR Scan     		PDF CPT30230 103A CPT30230 MBRP20030CTL

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by M B RP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M BRP20030CTL SWITCHMODE™ S chottky Pow er R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m etal-to-silicon


    OCR Scan     		PDF RP20030CTL/D BRP20030CTL 357C-03 MBRP20030CTL/D