MB85RS256PNF Search Results

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KAGA FEI America Inc MB85RS256TYPNF-GS-BCE1 F-RAM 256kbit FRAM SPI, 1.8 3.6V, 125C AECQ100 - SOP8 Tube
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Mouser Electronics	MB85RS256TYPNF-GS-BCE1		183			1 $3.89 10 $3.53 100 $3.21 1000 $2.72 10000 $2.67	Buy Now

MB85RS256PNF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85RS256PNF-G-JNE1		Fujitsu	Memory FRAM CMOS 256 K (32 K x 8) Bit SPI		Original	PDF

MB85RS256PNF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MB85RS256 Abstract: No abstract text available Text: MB85RS256 256Kbit FRAM SPI Memory Specifications Target spec. Fujitsu Limited Memory FRAM CMOS Electronic Devices Group 256K bits 32K x 8 SPI SOP-8 System Micro Div. MB85RS256 Rev0.4 PART NUMBER MB85RS256PNF DESCRIPTIONS MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a	Original	MB85RS256 256Kbit MB85RS256 MB85RS256PNF 1010times	PDF
MB85RS256 Abstract: MB85RS256PNF FPT-8P-M02 0011B 0110B FUJITSU FRAM Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13105-2E Memory FRAM CMOS 256 K 32 K x 8 Bit SPI MB85RS256 • DESCRIPTION MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory	Original	DS05-13105-2E MB85RS256 MB85RS256 F0702 MB85RS256PNF FPT-8P-M02 0011B 0110B FUJITSU FRAM	PDF
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MB85RS256PNF Abstract: MB85RS256 Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13105-3E Memory FRAM CMOS 256 K 32 K x 8 Bit SPI MB85RS256 • DESCRIPTION MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory	Original	DS05-13105-3E MB85RS256 MB85RS256 MB85RS256PNF	PDF
MB85RS256 Abstract: FUJITSU FRAM 0011B 0110B FPT-8P-M02 Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13105-2Ea Memory FRAM CMOS 256 K 32 K x 8 Bit SPI MB85RS256 • DESCRIPTION MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory	Original	DS05-13105-2Ea MB85RS256 MB85RS256 FUJITSU FRAM 0011B 0110B FPT-8P-M02	PDF