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FUJITSU Limited MB85R256HPFCN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MB85R256HPFCN		113			1 $8.862 10 $8.862 100 $5.4649 1000 $5.4649 10000 $5.4649	Buy Now

MB85R256H Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85R256H		Fujitsu	Memory FRAM CMOS 256 K (32 K x 8) Bit		Original	PDF
MB85R256HPF		Fujitsu	Memory FRAM CMOS 256 K (32 K x 8) Bit		Original	PDF
MB85R256HPFCN		Fujitsu	Memory FRAM CMOS 256 K (32 K x 8) Bit		Original	PDF
MB85R256HPFTN		Fujitsu	Memory FRAM CMOS 256 K (32 K x 8) Bit		Original	PDF

MB85R256H Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MB85R256HPF-G-BNDAE1 Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-4Ea Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13106-4Ea MB85R256H MB85R256H MB85R256HPF-G-BNDAE1 FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN	PDF
MB85R256HPF-G-BNDAE1 Abstract: No abstract text available Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-5E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13106-5E MB85R256H MB85R256H MB85R256HPF-G-BNDAE1	PDF
MB85R256HPF Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13106-2E MB85R256H MB85R256H F0702 MB85R256HPF	PDF
000read Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS05-13106-1E MB85R256H MB85R256H F0606 000read MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN MB85R256HPFTN TCA 120	PDF
Untitled Abstract: No abstract text available Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.	Original	MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001	PDF
s29gl032n90 Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11 Text: covPG00-00071e.fm 1 ページ２００７年５月１０日木曜日午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,	Original	covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11	PDF
S29JL032H70 Abstract: No abstract text available Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book	Original	PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70	PDF