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    mb811161622c

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11120-1E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM 144-pin, 2 Clock, 1-bank, based on 1 M × 16 Bit SDRAMs with SPD, Low-power version


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    PDF DS05-11120-1E 0/-84/-67/-100L/-84L/-67L/-100S/-84S/-67S 144-pin, MB8501S064CE MB811161622C 144-pin

    3654P

    Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
    Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable


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    PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram

    mb811161622c

    Abstract: MB811161622
    Text: July 1997 Revision 1.0 data sheet SOB1UL6414- 67/84/100 T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SOB1UL6414-(67/84/100)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.


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    PDF SOB1UL6414- 144-pin, MB811161622C- 1Mx16 100MHz) 84MHz) 15inaccuracies. MP-SDRAMM-DS-20557-7/97 mb811161622c MB811161622

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 1 R/Ix 84 BIT OUS DYNAMIC RAM SO»DIMM M 1S06 / • v r * * . I*-"I q o / “ £ 4/-67M00L/-84L/-67L/-100SA84S/-67S 144-pin, 2 Clock, 1-bank, based on 1 M x 16 Bit SDRAMs with SPD, Low-power version I DESCRIPTION The Fujitsu MB8501S064CE is a fully decoded, CMOS Synchronous Dynamic Random Access Memory


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    PDF 4/-67M00L/-84L/-67L/-100SA84S/-67S 144-pin, MB8501S064CE MB811161622C 144-pin F9709

    MB8508S064AE-100L

    Abstract: MB8508S064AE
    Text: SDRAM Modules 2 • Synchronous ORAM Modules Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (Wx&) 2Mx72 Part Number Mounted Device Clock Access Access [Capacity) x Frequency CLK tank Time 1 Time 2 number max. max. (ns) max. (ns) «Package» (MHz) MB8502SQ72AG-1OQ


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    PDF MB81117822A MB81117422A 2Mx72 MB8502SQ72AG-1OQ MB8502S07217822A 2Mx64 144Pin MB81116822C 4Mx64 MB8508S064AE-100L MB8508S064AE

    15j100

    Abstract: No abstract text available
    Text: SDRAM 1 I Synchronous DRAM: SDRAM (CMOS) VCC= Organization (W * b) Part Number Clock Frequency max. (MHz) M B 81117421A-100 100[10] Access Time 1 Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) + 3.3 V ± 0.3V , Ta= 0°C to +70 °C Power Consumption


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    PDF B81116822C-84L MB81116822C-67L MB811171621 MB811171622A-100 512kx16 B811171622A-84 MB811171622A-67 MB811161622C-100L MB811161622C-84L MB811161622C-67L 15j100