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    Untitled

    Abstract: No abstract text available
    Text: MB811161622A 1/2 IL08 C-MOS 16 M (2,048,000 x 8)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 GND GND 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 PIN NO. I/O SIGNAL 26


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    MB811161622A PDF

    MDS-168P-P08

    Abstract: 168PA MB811161622A mb811161622
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11101-2E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8501S064AC-100/-84/-67 168-pin, 1 Clock, 1-bank, based on 1 M × 16 BIT SDRAMs with SPD • DESCRIPTION The Fujitsu MB8501S064AB is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM


    Original
    DS05-11101-2E MB8501S064AC-100/-84/-67 168-pin, MB8501S064AB MB811161622A 168-pin MB8501S0ponsible F9703 MDS-168P-P08 168PA mb811161622 PDF

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original
    MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 1 M x 64 BIT 0/-84/-67 168-pin, 1 Clock, 1-bank, based on 1 M x 16 BIT SDRAMs with SPD DESCRIPTION The Fujitsu MB8501S064AB is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting of four MB811161622A devices which organized as two banks of 1 M x 16 bits and a 2 K-bit


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    168-pin, MB8501S064AB MB811161622A 168-pin F9703 PDF