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    MARKING TR SOT23-6 P MOSFET Search Results

    MARKING TR SOT23-6 P MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING TR SOT23-6 P MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12V 30A 3 pin mosfet

    Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A
    Text: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		PDF ST2301A ST2301A OT-23 -20V/-2 OT-23 12V 30A 3 pin mosfet MARKING TR SOT23-3 P MOSFET MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A

    st9401

    Abstract: MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y
    Text: ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		PDF ST9401 ST9401 OT-23 -20V/-2 MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y

    MOSFET P channel SOT-23

    Abstract: 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS ST2301D 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23
    Text: ST2301D P Channel Enhancement Mode MOSFET -2.0A DESCRIPTION The ST2301D is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST2301D ST2301D OT-23 -20V/-2 180m-ohm -20V/-1 360m-ohm MOSFET P channel SOT-23 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23

    Untitled

    Abstract: No abstract text available
    Text: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.


    Original     		PDF BSS138-G OT-23 OT-23, MIL-STD-750, QW-BTR40

    MOSFET P channel SOT-23

    Abstract: MOSFET P-Channel sot-23 MARKING CODE 16 transistor sot23 MARKING TR SOT23-3 P MOSFET st2005
    Text: ST2005SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST2005SRG ST2005SRG OT-23 -20V/-3 40m-ohm OT-23 MOSFET P channel SOT-23 MOSFET P-Channel sot-23 MARKING CODE 16 transistor sot23 MARKING TR SOT23-3 P MOSFET st2005

    2N7002-G

    Abstract: MOSFET
    Text: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S Maximum Ratings (at T =25°C) A Parameter Drain-Source voltage


    Original     		PDF 2N7002-G OT-23 QW-BTR12 2N7002-G MOSFET

    SMD MARKING CODE 7002

    Abstract: QW-BTR12 POWER MOSFET P1 smd marking code smd diode 2n7002 marking code 2N7002-G MOSFET SMD MARKING CODE 2n7002 0-35-W Diode smd code 202 120dg
    Text: MOSFET SMD Diodes Specialist 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C)


    Original     		PDF 2N7002-G OT-23 Characterist05 QW-BTR12 SMD MARKING CODE 7002 QW-BTR12 POWER MOSFET P1 smd marking code smd diode 2n7002 marking code 2N7002-G MOSFET SMD MARKING CODE 2n7002 0-35-W Diode smd code 202 120dg

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G Maximum Ratings (at T =25°C) A Value Unit VDS 60 V Drain current ID


    Original     		PDF 2N7002-G OT-23 QW-BTR12

    2N7002H

    Abstract: SMD MARKING CODE 7002 POWER MOSFET P1 smd marking code smd 7002 smd transistor 7002 MOSFET SMD MARKING CODE smd diode 2n7002 marking code equivalent smd mosfet 2n7002 HF smd marking NC package sot23
    Text: MOSFET SMD Diodes Specialist 2N7002-HF N-Channel RoHS Device Features SOT-23 Halogen free. Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15)


    Original     		PDF 2N7002-HF OT-23 QW-JTR03 2N7002H SMD MARKING CODE 7002 POWER MOSFET P1 smd marking code smd 7002 smd transistor 7002 MOSFET SMD MARKING CODE smd diode 2n7002 marking code equivalent smd mosfet 2n7002 HF smd marking NC package sot23

    2N7002-HF

    Abstract: MOSFET
    Text: MOSFET 2N7002-HF N-Channel RoHS Device Halogen Free SOT-23 Features -Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.044(1.10)


    Original     		PDF 2N7002-HF OT-23 QW-JTR03 2N7002-HF MOSFET

    IRLML6346TR

    Abstract: No abstract text available
    Text: PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 63 m 80 m RDS on max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6346TRPbF Application(s) •Load/ System Switch Features and Benefits Features


    Original     		PDF 7584A IRLML6346TRPbF OT-23) OT-23 AN-994. IRLML6346TR

    Untitled

    Abstract: No abstract text available
    Text: PD - 97535A IRLML6244TRPbF HEXFET Power MOSFET VDS 20 V VGS Max ±12 V RDS on max 21.0 m 27.0 m (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6244TRPbF Application(s) •Load/ System Switch Features and Benefits Features


    Original     		PDF 7535A IRLML6244TRPbF OT-23) OT-23 AN-994.

    irlml6346

    Abstract: IRLML6346TRPBF diode sot-23 marking AG
    Text: PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 63 m 80 m RDS on max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6346TRPbF Application(s) •Load/ System Switch Features and Benefits Features


    Original     		PDF 7584A IRLML6346TRPbF OT-23) OT-23 AN-994. irlml6346 IRLML6346TRPBF diode sot-23 marking AG

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET FMS2305A List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2305A 500hrs. MIL-STD-750D METHOD-1056 1000hrs. METHOD-1038 METHOD-1031 JESD22-A102

    IRLML6346

    Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
    Text: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits


    Original     		PDF 96310C IRLML9301TRPbF OT-23) AN-994. IRLML6346 IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244

    IRLML6346

    Abstract: IRLML6244 irlml2246 IRLML6246 IRLML0060 IRLML2244 irlml0030 IRLML2060 IRFML9244 IRLML9301
    Text: PD - 96309A IRLML0040TRPbF VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ HEXFET Power MOSFET V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits


    Original     		PDF 6309A IRLML0040TRPbF OT-23) AN-994. IRLML6346 IRLML6244 irlml2246 IRLML6246 IRLML0060 IRLML2244 irlml0030 IRLML2060 IRFML9244 IRLML9301

    IRF micro3

    Abstract: IRLML9301TRPBF
    Text: PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits


    Original     		PDF 96310C IRLML9301TRPbF OT-23) AN-994. IRF micro3 IRLML9301TRPBF

    IRLML0040TR

    Abstract: IRLML0040
    Text: PD - 96309A IRLML0040TRPbF HEXFET Power MOSFET VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits


    Original     		PDF 6309A IRLML0040TRPbF OT-23) AN-994. IRLML0040TR IRLML0040

    IRLML6346

    Abstract: IRLML6344 IRLML9303 IRFML9244 IRLML6244 Diode SOT-23 marking JE IRLML0030TRPBF irlml0030tr IRLML0060 DS 2020
    Text: PD - 96278B IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features


    Original     		PDF 96278B IRLML0030TRPbF OT-23) AN-994. IRLML6346 IRLML6344 IRLML9303 IRFML9244 IRLML6244 Diode SOT-23 marking JE IRLML0030TRPBF irlml0030tr IRLML0060 DS 2020

    IRFML9244

    Abstract: No abstract text available
    Text: IRLML2803PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 30V 3 D


    Original     		PDF IRLML2803PbF OT-23 IRFML9244

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are


    Original     		PDF GSM3406AS, OT-23 GSM3406ASJZF OT-23) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2301A, -20V/-2 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3406A, OT-23 GSM3406AJZF OT-23) Lane11

    FMS2303

    Abstract: smd mosfet POWER MOSFET P1 smd marking code SMD mosfet sot-23 MARKING code 1A
    Text: Formosa MS SMD MOSFET FMS2303 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2303 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMS2303 smd mosfet POWER MOSFET P1 smd marking code SMD mosfet sot-23 MARKING code 1A