Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781K*LT1 3 COLLECTOR 1 3 BASE 2 EMITTER 1 2 SOT– 23 FAbsolute maximum ratings Ta = 25_C FDEVICE MARKING L2SD1781KRLT1=AFR L2SD1781KQLT1=AFQ FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE
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L2SD1781K
L2SD1781KRLT1
L2SD1781KQLT1
L2SD1781K-1/4
L2SD1781K-2/4
L2SD1781K-3/4
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1
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L2SD1781KXLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT1G
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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transistor AFR
Abstract: AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking L2SD1781KRLT1G transistor 1039 L2SD1781KQLT1 L2SD1781KQLT1G
Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is Available.
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L2SD1781K
500mA
L2SB1197K
OT-23
/TO-236AB
L2SD1781KQLT1
L2SD1781KQLT1G
L2SD1781KRLT1
L2SD1781KRLT1G
transistor AFR
AFR, TRANSISTOR
marking AFQ
AFR MARKING SOT-23
marking 1039
AFR marking
transistor 1039
L2SD1781KQLT1
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0440
Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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L2SD1781KQLT1G
L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
0440
L2SD1781KRLT1G
marking AFR
AFR marking
transistor afr
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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L2SD1781KQLT1G
L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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L2SD1781KQLT1G
L2SD1781KQLT1G
S-L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
AEC-Q101
81KQLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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L2SD1781KQLT1G
L2SD1781KQLT1G
S-L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
AEC-Q101
81KQLT1G
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marking AFQ
Abstract: 2SB1197K 2SD1781K transistor afr
Text: 2SD1781K NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K
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2SD1781K
OT-23
500mA
2SB1197K
100mA,
500mA,
100MHz
01-June-2002
marking AFQ
2SB1197K
2SD1781K
transistor afr
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1
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L2SD1781KXLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT1G
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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marking AFR
Abstract: No abstract text available
Text: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SD1781K
OT-23-3L
OT-23-3L
100mA
500mA
100MHz
marking AFR
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05
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OT-23-3L
OT-23-3L
2SD1781K
100mA
500mA,
100MHz
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2SD1781K
Abstract: afr 05 transistor afr
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD1781K SOT-23-3L TRANSISTOR NPN FEATURES z Low voltage z High saturation current capability 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SD1781K
OT-23-3L
100mA
500mA
100MHz
2SD1781K
afr 05
transistor afr
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1781 SOT-23 TRANSISTOR NPN FEATURES Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA) z Complements to 2SB1197. z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SD1781
OT-23
500mA
2SB1197.
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 FStructure Epitaxial planar type
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L2SD1781K
500mA
L2SB1197K
OT-23
/TO-236AB
L2SD1781KQLT1
L2S1781KRLT1
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Untitled
Abstract: No abstract text available
Text: 2SD1781K NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 Features: *Very Low VCE(sat) V CE(sat) < 0.4 V (Typ.) (I C / IB = 500mA / 50mA) *High Current Capacity in Compact Package. *Complements The 2SB1197 *We Declare That The Material of Product Compliance With RoHS Requirements.
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2SD1781K
OT-23
500mA
2SB1197
-50mA,
100MHz
14-Nov-2012
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2SD1781
Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
Text: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197
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2SD1781
OT-23
500mA
2SB1197
2SD1781-Q
2SD1781-R
100mA,
500mA,
100MHz
2SD1781
2sd1781r
transistor afr
2SB1197
2SD1781-Q
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intersil DATE CODE MARKING
Abstract: No abstract text available
Text: X9015 Low Noise, Low Power, Volatile Data Sheet February 24, 2005 Single Digitally Controlled XDCP Potentiometer FN8157.0 Features • 32 taps The Intersil X9015 is a 32 tap potentiometer that is volatile. The device consists of a string of 31 resistors that can be
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X9015
FN8157
X9015
intersil DATE CODE MARKING
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Untitled
Abstract: No abstract text available
Text: MCP1603 2.0 MHz, 500 mA Synchronous Buck Regulator Features General Description • • • • • The MCP1603 is a high efficient, fully integrated 500 mA synchronous buck regulator whose 2.7V to 5.5V input voltage range makes it ideally suited for applications powered from 1-cell Li-Ion or 2-cell/3-cell
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MCP1603
MCP1603
DS22042A-page
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AFG MARKING CODE
Abstract: Synchronous Buck Regulator 180i UV 471 CMD4D06 MCP1603 TSOT23
Text: MCP1603 2.0 MHz, 500 mA Synchronous Buck Regulator Features General Description • • • • • The MCP1603 is a high efficient, fully integrated 500 mA synchronous buck regulator whose 2.7V to 5.5V input voltage range makes it ideally suited for applications powered from 1-cell Li-Ion or 2-cell/3-cell
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MCP1603
MCP1603
Undervoltag36-4803
DS22042A-page
AFG MARKING CODE
Synchronous Buck Regulator 180i
UV 471
CMD4D06
TSOT23
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rkm 33 transistor
Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
IMH11A
IMH14A
IMH15A
rkm 33 transistor
g1k bc848b
rkm transistor
DTB133HKA
DTD133HKA
MMST8598
TRANSISTOR MARKING CODE R2A
rkm 35 transistor
2SA1885
marking W8 transistor
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Gann diode
Abstract: marking gbnn
Text: MCP1603/B/L 2.0 MHz, 500 mA Synchronous Buck Regulator Features General Description • Over 90% Typical Efficiency • Output Current Up To 500 mA • Low PFM Quiescent Current = 45 µA, typical MCP1603/L • Low Shutdown Current = 0.1 µA, typical • Adjustable Output Voltage:
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MCP1603/B/L
MCP1603/L)
MCP1603B)
MCP1603/B/L
DS22042B-page
Gann diode
marking gbnn
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113 marking code transistor ROHM
Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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