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    L2SB1197K Search Results

    L2SB1197K Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L2SB1197KQLT1 Leshan Radio Company Low Frequency Transistor PNP Silicon Original PDF
    L2SB1197KQLT1G Leshan Radio Company Low Frequency Transistor PNP Silicon Original PDF
    L2SB1197KRLT1 Leshan Radio Company Low Frequency Transistor PNP Silicon Original PDF
    L2SB1197KRLT1G Leshan Radio Company Low Frequency Transistor PNP Silicon Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon FEATURE 3 ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 2 ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    ahr transistor

    Abstract: L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K*LT1 PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197K L2SD1781K 236AB) L2SB1197KQLT1 L2SB1197KQLT1G 3000/Tape L2SB1197KRLT1 L2SB1197KRLT1G ahr transistor L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


    Original     		PDF L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Low Frequency Transistor Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish L2SB1197KRLT1 3 COLLECTOR L2SB1197KQLT1 1 BASE 2 EMITTER 3 FAbsolute maximum ratings Ta = 25_C 1 2 SOT– 23


    Original     		PDF L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197K OT-23 3000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G S-L2SB1197KQLT1G L2SD1781K AEC-Q101 236AB) 3000/Tape 10000/Tape L2SB1197KQLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    0440

    Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G 0440 L2SD1781KRLT1G marking AFR AFR marking transistor afr

    ahr transistor

    Abstract: L2SB1197KQLT1G L2SB1197KRLT1G L2SB1197K sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr transistor L2SB1197KRLT1G L2SB1197K sot23 ahq

    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 FStructure Epitaxial planar type


    Original     		PDF L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2S1781KRLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


    Original     		PDF L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    transistor AFR

    Abstract: AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking L2SD1781KRLT1G transistor 1039 L2SD1781KQLT1 L2SD1781KQLT1G
    Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is Available.


    Original     		PDF L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2SD1781KQLT1G L2SD1781KRLT1 L2SD1781KRLT1G transistor AFR AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking transistor 1039 L2SD1781KQLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original     		PDF L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor *32V, *0.5A L2SA1036K*LT1 L2SA1036KPLT1 FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. L2SA1036KQLT1 L2SA1036KRLT1 The G.Suffix Denotes a Pb-Free Lead Finish


    Original     		PDF L2SA1036K L2SA1036KPLT1 500mA L2SA1036KQLT1 L2SA1036KRLT1 L2SA1036KPLT1 L2SA1036KQLT1 OT-23 L2SA1036KRLT1 L2SB1197K

    copper wire

    Abstract: LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G
    Text: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 090401 PCN Issue Date: 28th Apr' 2009 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SOT23 Packages Contact your local LRC Sales


    Original     		PDF L2SC2411KRLT1G L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G L2SC3906KALT1G L2SD1781KRLT1G L2SD2114KVLT1G L2SD2114KWLT1G L9012QALT1G L9012QLT1G copper wire LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G