Untitled
Abstract: No abstract text available
Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery
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DMN3730U
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C
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DMN2300U
AEC-Q101
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: No abstract text available
Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV160UP
O-236AB)
MOSFET TRANSISTOR SMD MARKING CODE nh
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
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transistor smd code marking 420
Abstract: No abstract text available
Text: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV30XN
O-236AB)
transistor smd code marking 420
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV16UN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV37EN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV185XN
O-236AB)
gate-sou15
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Untitled
Abstract: No abstract text available
Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV90EN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV28UN
O-236AB)
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Mosfet
Abstract: SSF3051G7
Text: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load
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SSF3051G7
3051G7
45mohm
OT23-6
3000pcs
10pcs
30000pcs
Mosfet
SSF3051G7
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: No abstract text available
Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV20XN
O-236AB)
TRANSISTOR SMD MARKING CODE 1 KW
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Mosfet
Abstract: SSF2160G4 marking s25
Text: SSF2160G4 20V N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 28mohm(typ.) ID 4.5A 2160G4 S25 Marking and Pin SOT23-3 Assignment Schematic Diagram Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load
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SSF2160G4
28mohm
2160G4
OT23-3
3000pcs
10pcs
30000pcs
120000pcs
Mosfet
SSF2160G4
marking s25
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Untitled
Abstract: No abstract text available
Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV32UP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV48XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV170UN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV33UPE
O-236AB)
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Mosfet
Abstract: SSF3324 MOSFET N-Channel 1a vgs 1.2v sot-23
Text: SSF3324 30V N-Channel MOSFET Main Product Characteristics VDSS 30V RDS on 26.5mohm(typ.) ID 5.8A ① SOT23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF3324
Mosfet
SSF3324
MOSFET N-Channel 1a vgs 1.2v sot-23
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65UN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV50UPE
O-236AB)
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BSS79
Abstract: No abstract text available
Text: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E
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BSS79,
BSS81
BSS80,
BSS82
VPS05161
BSS79B
BSS79C
BSS81B
BSS81C
BSS79
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BSS81C
Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Text: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E
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BSS79,
BSS81
BSS80,
BSS82
BSS79B
BSS79C
BSS81B
BSS81C
BSS79
BSS81C
BSS79
BSS79B
BSS79C
BSS80
BSS81
BSS81B
BSS82
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Zener sot marking 162
Abstract: marking 8D SOT 89 marking 81t marking 81J
Text: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232
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OCR Scan
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300mW)
MMBZ5225
MMBZS267
TD-236AB
OT-23)
Zener sot marking 162
marking 8D SOT 89
marking 81t
marking 81J
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