LOGIC LEVEL MOSFET Search Results

LOGIC LEVEL MOSFET Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

LOGIC LEVEL MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N6901 Abstract: No abstract text available Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM	Original	2N6901 O-205AF) 2N6901	PDF
Untitled Abstract: No abstract text available Text: SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features • Logic level gate drive  Max. RDS ON = 0.24 at VGS = 10V, ID = 0.5A  Low RDS(on) provides higher efficiency  ESD protected: 2000V (HBM ±1000V)  Halogen free and RoHS compliant device	Original	SNN01Z10D SNN01Z10 O-252 01Z10 17-JAN-12 KSD-T6O039-000	PDF
iec60134 Abstract: JESD22-A108C JESD22-A108-C JESD22A108C AN10721 JESD22 JESD22*108 A/IEC60134 Text: AN10721 Logic level VGS ratings for NXP power MOSFETs Rev. 01 — 18 July 2008 Application note Document information Info Content Keywords gate–source voltage, logic level, rating Abstract Explanation of the link between the absolute maximum rating of gate–source voltage VGS for a logic level power MOSFET, the design	Original	AN10721 AN10721 iec60134 JESD22-A108C JESD22-A108-C JESD22A108C JESD22 JESD22*108 A/IEC60134	PDF
0n06 Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE Text: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic	Original	0N06L RFP30N06LE, RF1S30N06LESM 0n06 mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE	PDF
F10N15L Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530 Text: 387 5081 G E SOLID STATE 01 DE \| 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level	OCR Scan	3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530	PDF
F10N12L Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)	OCR Scan	RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15	PDF
F15N05L Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m	OCR Scan	RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors	PDF
RFL2N05L Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520 Text: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■	OCR Scan	RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L RFL2N05L RFL2N06L RFP4N05L RFP4N06L* RFP4N06L TA9520	PDF
BUK110-50GL Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface	OCR Scan	BUK110-50GL BUK110-50GL OT404	PDF
mosfet fq transistor Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as	OCR Scan	BUK107-50DS BUK107-50DS ie-05 mosfet fq transistor	PDF
C5052 Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as	OCR Scan	BUK107-50DS 1E-07 1E-05 1E-03 C5052	PDF
Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK100-50GL iSL25	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET_ _ DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface	OCR Scan	BUK108-50DL BUK108-50DL	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-500L Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface	OCR Scan	BUK110-500L BUK110-50DL	PDF

Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BUK101-50DL Logic level TOPFET_ _ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK101-50DL -50DL 100uA so25-C	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK100-50GL BUK100-50GL	PDF
BUK1D1-50GL Abstract: 8UK101-50GL Text: Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK101-50GL Fig-23. BUK1D1-50GL 8UK101-50GL	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK100-50DL BUK100-50DL	PDF
Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK102-50DL BUK102-50DL	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK100-50GL BUK100-50GL	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK102-50GL BUK102-50GL	PDF
IRLF130 Abstract: SS452 mosfet b44 diode b44 Text: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed	OCR Scan	IRLF130 O-205AF SS452 D021HSQ IRLF130 00S1451 mosfet b44 diode b44	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a	OCR Scan	BUK110-50GL isl25	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK109-5OGL Logic level TOPFET_ _ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a	OCR Scan	BUK109-5OGL	PDF

LOGIC LEVEL MOSFET Search Results

LOGIC LEVEL MOSFET Result Highlights (5)

LOGIC LEVEL MOSFET Datasheets Context Search

2N6901

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iec60134

0n06

F10N15L

F10N12L

F15N05L

RFL2N05L

BUK110-50GL

mosfet fq transistor

C5052

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BUK1D1-50GL

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IRLF130

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