DC-10
Abstract: DC-20 FMS2027 FMS2027-000 MIL-HDBK-263
Text: FMS2027 Preliminary Datasheet v2.2 DC–20 GHZ MMIC SPDT NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-Reflective design Low Insertion loss 2.2 dB at 20GHz typical Very high isolation 40 dB at 20GHz typical
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FMS2027
20GHz
FMS2027
FMS2027-000
DC-10
DC-20
FMS2027-000
MIL-HDBK-263
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20GHZ
Abstract: FMA3008 MIL-HDBK-263
Text: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the
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FMA3008
20GHZ
35mmx1
FMA3008
23dBm
-10dB
FMA3008-000
FMA3008-000SQ
MIL-HDBK-263
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FMS2027
Abstract: FMS2027-000 MIL-HDBK-263
Text: FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It
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FMS2027
DC-20GHz
FMS2027
20GHz
FMS2027-000
DS090612
FMS2027-000SQ
FMS2027-000
MIL-HDBK-263
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84-1 LMI
Abstract: 22-A114-B FMS2021
Text: FMS2021 Advanced Product Information 1.1 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Functional Schematic Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss <0.7 dB at 6GHz typical
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FMS2021
FMS2021
22-A114-B.
MIL-STD-1686
MILHDBK-263.
84-1 LMI
22-A114-B
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LB1822
Abstract: 3 phase motor circuit diagrams 33182
Text: Ordering number:EN3318 Monolithic Digital IC LB1822 3-Phase Brushless Motor Predriver with Digital Speed Control Overview Package Dimensions The LB1822 is a monolithic predriver IC for controlling three-phase brushless motors and has an on-chip digital speed control circuit. The LB1822 is ideally suited for
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EN3318
LB1822
LB1822
147A-DIP28HS
LB1822]
3 phase motor circuit diagrams
33182
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MTP55N06Z
Abstract: TMOS E-FET
Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to
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MTP55N06Z/D
MTP55N06Z
MTP55N06Z
TMOS E-FET
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4250T
Abstract: LB1693 DIP20H sanyo brushless dc 36v brushless dc motor EN3295
Text: Ordering number:EN3295 Monolithic Digital IC LB1693 3-Phase Brushless Motor Driver Overview Package Dimensions The LB1693 is a driver IC for 3-phase brushless motors. It is ideally suited for office automation equipment and DC fan motors. unit:mm 3037A-DIP20H
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EN3295
LB1693
LB1693
037A-DIP20H
LB1693]
DIP20H
4250T
DIP20H
sanyo brushless dc
36v brushless dc motor
EN3295
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zero crossing detector using lm358
Abstract: ntp 3100 IC LM 258 smd PEB3265 DUSLIC DuSLICos TIP 298 LM 340 TS lm358 sum PEB 3265
Text: Dat a Sh eet , DS2 , Ju ly 20 00 DuSLIC Dual Channel Subscriber Line Interface Circuit PEB PEB PEB PEB PEB 3264/-2 Version 1.2 4264/-2 Version 1.1 3265 Version 1.2 4265/-2 Version 1.1 4266 Version 1.1 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .
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D-81541
zero crossing detector using lm358
ntp 3100
IC LM 258 smd
PEB3265
DUSLIC
DuSLICos
TIP 298
LM 340 TS
lm358 sum
PEB 3265
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Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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Untitled
Abstract: No abstract text available
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
FMA3058-000
FMA3058-000SQ
FMA3058-000S3
DS090609
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Untitled
Abstract: No abstract text available
Text: RFSW2045D RFSW2045D DC to 20GHz GaAs SP4T Switch DC TO 20GHz GaAs SP4T SWITCH Package: Die, 1.91mmx1.33mmx0.10mm Product Description Features RFMD’s RFSW2045D is an absorptive SP4T GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2045D
20GHz
20GHz
91mmx1
33mmx0
RFSW2045D
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Block Diagram sle 66 pe infineon
Abstract: ntp 3200 DUSLIC DIN 6930 smd m2b OEN relays 5v caller id converter dtmf to fsk DuSLIC SICOFI LM 4265 data sheet CIT relay
Text: ICs for Communications DUAL CHANNEL SLICOFI-2, SLIC DuSLIC PEB PEB PEB PEB PEB 3264/-2 Version 1.1 4264/-2 Version 1.1 3265 Version 1.1 4265/-2 Version 1.1 4266 Version 1.1 Preliminary Data Sheet 10.99 DS 1 • DuSLIC Revision History: Current Version: 10.99
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Untitled
Abstract: No abstract text available
Text: DRAFT FMA3008 DRAFT FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the
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FMA3008
20GHZ
35mmx1
FMA3008
23dBm
-10dB
FMA3008-000
FMA3008-000SQ
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60IDS
Abstract: x-band mmic
Text: FMA246 Preliminary Datasheet v2.3 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • LAYOUT: 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current
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FMA246
FMA246
22A114.
MIL-STD-1686
MIL-HDBK-263.
60IDS
x-band mmic
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20Frequency
Abstract: No abstract text available
Text: FMS2029 Production Datasheet v4.0 DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.2 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive input and output in off-state Excellent low control voltage performance
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FMS2029
FMS2029
22-A114.
MIL-STD1686
MIL-HDBK-263.
FMS2029-000-WP
20Frequency
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FMA2029
Abstract: No abstract text available
Text: FMA2029 Datasheet v2.2 DC–20 GHZ MMIC SPST NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Both ports terminated in 50Ω in off-state Low Insertion loss 2.2dB at 20 GHz typical Very high isolation 50dB at 20 GHz typical
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FMA2029
FMS2029
22A114.
MIL-STD-1686
MIL-HDBK-263.
FMS2029-000
FMA2029
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Untitled
Abstract: No abstract text available
Text: SP691A/693A/800L/800M SIGNAL PROCESSING EXCELLENCE Low Power Microprocessor Supervisory with Battery Switch-Over • Precision 4.65V/4.40V Voltage Monitoring ■ 200ms Or Adjustable Reset Time ■ 100ms, 1.6s Or Adjustable Watchdog Time ■ 50µA Maximum Operating Supply Current
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SP691A/693A/800L/800M
200ms
100ms,
250mA
MAX691A/693A/
800L/800M
SP691A/693A/800L/8yoda-ku
SP691A
DS/02
SP691A/693A/800L/800M
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sm 0038 receiver
Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
Text: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts
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P35-1110
467/SM/00147/200
P35-1110-0
P35-1110-1
sm 0038 receiver
Bookham Technology
Bookham
NN12
P35-1110-0
P35-1110-1
JWT 4 pin
80IN 15PB 5AG
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Avantek S
Abstract: AVANTEK transistor ATF-20136
Text: AVANTEK 50E D INC 0AVANTEK • lmiTbb 0 0 0 b S 3 cl S ATF-10736 ATF-20136 0.5-12 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • High Associated Gain: 12.5 dB typical at 4 GHz • Low Bias: V d s = 2 V , I d s = 20 mA • High Output Power: 20.0 dBm typical Pi dB
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000bS3c
ATF-10736
ATF-20136)
ATF-10736
371-8717or
Avantek S
AVANTEK transistor
ATF-20136
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d28c256cz
Abstract: uPD28C256 WPH-2 BLC10 PD28C256
Text: N E C ELECTRONICS INC T^íMá'i ' L^lMit W NEC Electronics Inc. tlE D • b42?S2S 003544b 217 ■ NECE PPD28 C 256 32,768 X 8 -Bit CMOS EEPROM Description Pin Configuration The /¿PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga
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uPD28C256
PD28C256
144-bit
/JPD28C256
64-byte
83IH-689SB
d28c256cz
WPH-2
BLC10
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m514262
Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Text: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.
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MSM514262
144-Word
MSM514262
512-words
SOJ28-P-400-1
50MBB
SOJ32-P-400-1
m514262
MSM514262-10
MSM514262-70
MSM514262-80
ZIP28-P-400
M5M51426
MSM51426
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Untitled
Abstract: No abstract text available
Text: FUJITSU LTD 53E 1 • BTM^Sb 0002404 436 « F C A J T -4 e -2 -? *- A p ra m i FUJITSU Edition 1.0 DATASHEET' MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujtau M88441 it an 8K words x 8 bits dual-port high-performance Static Random
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MB8441-45/-55
64K-BIT
M88441
MB8441
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M5M4V4260
Abstract: No abstract text available
Text: M 5 M 4 V 4 2 6 0 J , T P , R T - 6 ,-7 ,-8 ,- 6 S , - 7 S , " 8 S FAST PAGE MODE 4194304-B IT 262144-W O R D BY 16-B IT DYNAM IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 262144-w ord by 16-bit dynamic RAMs, fabricated w ith the high performance CMOS process, and is
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4194304-B
62144-W
262144-w
16-bit
M5M4V4260
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wf vqe 24 d
Abstract: 2N5898 2N5989 225AB 25CC 2N5991 MBD5300 TO-225AB mbd-5300 Transistor J3T 3 pin
Text: MOTOROLA SC XSTRS/R F 12Ë D | b3L?254 OG 0MS?b ? | ^33 NPN MOTOROLA SEMICONDUCTOR 2N5989 2N5991 TECHNICAL DATA 12 AM PERE POWER PLASTIC COM PLEM ENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COM PLEM ENTARY SILICON * '* .J .J. . designed fo r use In g eneral-purpose am p lifier and sw itching
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b3L7254
2N5989
2N5991
2N5989
2N5991
wf vqe 24 d
2N5898
225AB
25CC
MBD5300
TO-225AB
mbd-5300
Transistor J3T 3 pin
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