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    LM5113 Search Results

    LM5113 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM5113SDE/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 Visit Texas Instruments Buy
    LM5113TME/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Visit Texas Instruments Buy
    LM5113SDX/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 Visit Texas Instruments Buy
    LM5113QDPRRQ1 Texas Instruments Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 Visit Texas Instruments Buy
    LM5113TMX/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Visit Texas Instruments
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    LM5113 Price and Stock

    Texas Instruments LM5113SDX-NOPB

    IC GATE DRVR HALF-BRIDGE 10WSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LM5113SDX-NOPB Digi-Reel 6,859 1
    • 1 $4.81
    • 10 $3.662
    • 100 $3.0578
    • 1000 $2.74127
    • 10000 $2.74127
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    LM5113SDX-NOPB Cut Tape 6,859 1
    • 1 $4.81
    • 10 $3.662
    • 100 $3.0578
    • 1000 $2.74127
    • 10000 $2.74127
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    LM5113SDX-NOPB Reel 4,500 4,500
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    • 10000 $2.4525
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    Texas Instruments LM5113TME-NOPB

    IC GATE DRVR HALF-BRIDGE 12DSBGA
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    DigiKey LM5113TME-NOPB Reel 3,000 250
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    • 10000 $2.76197
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    Texas Instruments LM5113QDPRRQ1

    IC GATE DRVR HALF-BRIDGE 10WSON
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    DigiKey LM5113QDPRRQ1 Digi-Reel 2,549 1
    • 1 $4.41
    • 10 $3.347
    • 100 $2.7875
    • 1000 $2.49461
    • 10000 $2.49461
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    LM5113QDPRRQ1 Cut Tape 2,549 1
    • 1 $4.41
    • 10 $3.347
    • 100 $2.7875
    • 1000 $2.49461
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    LM5113QDPRRQ1 Reel 4,500
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    Mouser Electronics LM5113QDPRRQ1 4,562
    • 1 $4.41
    • 10 $3.35
    • 100 $2.79
    • 1000 $2.49
    • 10000 $2.48
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    Ameya Holding Limited LM5113QDPRRQ1 723
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    Win Source Electronics LM5113QDPRRQ1 54,850
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    • 100 $2.771
    • 1000 $2.4843
    • 10000 $2.4843
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    Texas Instruments LM5113SD-NOPB

    IC GATE DRVR HALF-BRIDGE 10WSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LM5113SD-NOPB Cut Tape 1,498 1
    • 1 $5.47
    • 10 $4.184
    • 100 $3.5066
    • 1000 $3.23564
    • 10000 $3.23564
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    LM5113SD-NOPB Digi-Reel 1,498 1
    • 1 $5.47
    • 10 $4.184
    • 100 $3.5066
    • 1000 $3.23564
    • 10000 $3.23564
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    LM5113SD-NOPB Reel 1,000 1,000
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    • 1000 $2.83
    • 10000 $2.83
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    Texas Instruments LM5113SDE-NOPB

    IC GATE DRVR HALF-BRIDGE 10WSON
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    DigiKey LM5113SDE-NOPB Cut Tape 1,277 1
    • 1 $5.47
    • 10 $4.184
    • 100 $3.5066
    • 1000 $3.5066
    • 10000 $3.5066
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    LM5113SDE-NOPB Digi-Reel 1,277 1
    • 1 $5.47
    • 10 $4.184
    • 100 $3.5066
    • 1000 $3.5066
    • 10000 $3.5066
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    LM5113SDE-NOPB Reel 500 250
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    • 1000 $2.83
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    Find more LM5113 price and stock on Findchips.com

    LM5113 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LM5113LLPEVB/NOPB Texas Instruments Evaluation Boards - DC/DC & AC/DC (Off-Line) SMPS, Programmers, Development Systems, BOARD EVAL FOR LM5113LLP Original PDF
    LM5113QDPRRQ1 Texas Instruments Integrated Circuits (ICs) - PMIC - Gate Drivers - IC HALF-BRIDGE GATE DRVR 10WSON Original PDF
    LM5113SDE/NOPB Texas Instruments LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 Original PDF
    LM5113SD/NOPB Texas Instruments LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 Original PDF
    LM5113SDX/NOPB Texas Instruments LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 Original PDF
    LM5113TME/NOPB Texas Instruments LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Original PDF
    LM5113TMX/NOPB Texas Instruments LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA Original PDF

    LM5113 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs


    Original     		PDF LM5113 SNVS725F LM5113 100VDC

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 A A TP40 Keystone 5015 5V U10 NC7SZ08L6X 2 5VHS 33 Ohm C20 100nF, 25V R13 Y DNP J10 U20 LM5113 Lin 4 3 2 1 Hin 5V D10 40V 30mA C14 100pF, 25V C12 100nF, 25V .1" Male Vert. 1 GUL 1 GUH GUL 5 SWNode R40 2 1 Ohm 5VHS 3 4 Vsup J40 GUH SWNode 2 Vsup


    Original     		PDF NC7SZ08L6X 100nF, 100pF, LM5113 70VDC EPC2015 NC7SZ00L6Xn

    Untitled

    Abstract: No abstract text available
    Text: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs


    Original     		PDF LM5113 SNVS725F LM5113 100VDC

    smd transistor A1 HB

    Abstract: LM5113 WSON 10 DPR0010A Texas Instruments GaN
    Text: LM5113 www.ti.com SNVS725E – JUNE 2011 – REVISED JANUARY 2012 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • Independent high-side and low-side TTL logic inputs 1.2A/5A peak source/sink current


    Original     		PDF LM5113 SNVS725E LM5113 100VDC smd transistor A1 HB WSON 10 DPR0010A Texas Instruments GaN

    Untitled

    Abstract: No abstract text available
    Text: LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • • • • Independent High-Side and Low-Side TTL Logic Inputs


    Original     		PDF LM5113 SNVS725F LM5113 100VDC

    LM5113

    Abstract: HMK325B7225K smd diode 5d SOD-323 EPC2001 GRM188R71H103KA0 AN-2149 22UF C3225X7R1C226K LM5025 RC0603FR-0710R
    Text: National Semiconductor Application Note 2149 Min Chen October 12, 2011 Introduction IC Features The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium


    Original     		PDF LM5113 LM5113, LM5025 800kHz AN-2149 HMK325B7225K smd diode 5d SOD-323 EPC2001 GRM188R71H103KA0 AN-2149 22UF C3225X7R1C226K RC0603FR-0710R

    Gan transistor

    Abstract: No abstract text available
    Text: LM5113 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Literature Number: SNVS725D LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs General Description Features The LM5113 is designed to drive both the high-side and the


    Original     		PDF LM5113 LM5113 SNVS725D Gan transistor

    smd transistor A1 HB

    Abstract: omap hs smd driver fets
    Text: LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs General Description Features The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride GaN FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side


    Original     		PDF LM5113 smd transistor A1 HB omap hs smd driver fets

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA484A – October 2011 – Revised May 2013 AN-2149 LM5113 Evaluation Board 1 Introduction The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium Nitride GaN FET


    Original     		PDF SNVA484A AN-2149 LM5113 LM5113, LM5025 800kHz

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 A A COTP40 TP40 5V PIU1002 B B PIJ1003 PIU1004 PIC20 1 PIC20 2 PIR1303 PIR1302 PID1002 5V PIJ1001 PIC1201 PIC1202 .1" Male Vert. COU20 U20 LM5113SD PIC1401 6 5 PIU2006 PIU2005 Lin 10k PIR1401 U11 COU11 NC7SZ00L6X A NLGUL GUL COR41 R41 1PIR4101


    Original     		PDF COTP40 PIU1004 PIR1303 PIR1302 PIU103 PID1002 PIJ1001 PIC1201 PIC1202 COU20

    Untitled

    Abstract: No abstract text available
    Text: NOTE. The EPC9006 development board does not have any current or thermal protection on board. Figure 4: Typical Waveforms for VIN = 48 V to 5 V/5 A 1000kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage


    Original     		PDF EPC9006 1000kHz) EPC2007

    BQ24153

    Abstract: schematic diagram TCON lcd samsung tps51631 LG 21 color tv Circuit Diagram schematics ultraslim UCD90120 TPS65175 tps65642 LM2740 INA230 QFN 10 2x2 footprint
    Text: Power Management Guide Power Management Guide 2014 2014 www.ti.com/power www.ti.com/power Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear


    Original     		PDF

    stackpole potentiometer

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/14 A 500 kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9017 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW


    Original     		PDF EPC9017 EPC2001 stackpole potentiometer

    Led driver 10W schematic

    Abstract: schematic diagram of mosfet based inverters mini inverter smd inverter 10w Power MosFet inverter schematic diagram four switch mosfet inverter LM5118 mini inverter SMD based 0805YD106KAT2A TDSON-8 Mosfet
    Text: National Semiconductor Application Note 2178 Ron Crews October 17, 2011 Introduction synchronous 4 switch version is realized, with corresponding increase in efficiency and only requires a handful of readably available parts. This is shown in Figure 2, in its basic form. All


    Original     		PDF LM5118 AN-2178 Led driver 10W schematic schematic diagram of mosfet based inverters mini inverter smd inverter 10w Power MosFet inverter schematic diagram four switch mosfet inverter mini inverter SMD based 0805YD106KAT2A TDSON-8 Mosfet

    EPC8004

    Abstract: No abstract text available
    Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been


    Original     		PDF AN015 EPC8000 ATS-54150K-C2-R0 EPC8004

    Untitled

    Abstract: No abstract text available
    Text: Figure 3: Proper Measurement of Switch Node – OUT Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 500kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9002 development board does not have any current or thermal protection on board.


    Original     		PDF 500kHz) EPC9002 EPC2001

    Untitled

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/15 A 500kHz Buck converter CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9001 development board does not have any current or thermal protection on board.


    Original     		PDF 500kHz) EPC9001 EPC2015

    Untitled

    Abstract: No abstract text available
    Text: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,


    Original     		PDF WP014

    Untitled

    Abstract: No abstract text available
    Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9107 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not


    Original     		PDF EPC9107

    Untitled

    Abstract: No abstract text available
    Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9101 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not


    Original     		PDF EPC9101

    Untitled

    Abstract: No abstract text available
    Text: 1 A 2 4 3 5 6 A 7 - 12 Vdc U3 MCP1703 J1 8 1 2 7 CON2 C4 1uF, 25V 6 OUT NC NC NC NC GND 1 VCC 2 C11 1uF, 25V 3 C4 1uF, 25V 4 9 GND 5 IN NC A 1 2 3 4 VDD D5 D4 D3 D2 4 3 2 1 11 9 B J6 CON4 R11 Zero VDD HB HOH HS HOL 10 C16 4.7uF, 50V D6 Optional LOH 11 EPC2015


    Original     		PDF MCP1703 EPC2015 03U40 LM5113 NC7SZ08L6X NC7SZ00L6X

    Untitled

    Abstract: No abstract text available
    Text: D C B A VOUT 1 C3 C1 220pF C2 MODE TRK/SS VCC R2 15k 22pF 0.1uF, 25V R8 39.2k R7 Zero Opt 6 5 4 3 2 S- RUN C5 S+ EXT 2 MODE 100k R12 R11 560k 11 12 13 14 0.1uF, 25V C7 16 15 R9 2.2 IntVCC PGND BG SW TG Boost VIN U1 LTC3833 R10 10.0k C18 Optional VIN PGOOD


    Original     		PDF 220pF LTC3833 100pF SDM03U40 LM5113TM 270nH EPC9101 EPC2015

    Untitled

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 1000kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9010 development board does not have any current or thermal protection on board.


    Original     		PDF 1000kHz) EPC9010 EPC2016

    "gallium nitride" mosfet

    Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
    Text: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can


    Original     		PDF reqM5113 LM5113 "gallium nitride" mosfet 48V MOSFET GaN power MOSFET "gallium nitride" Half-Bridge Driver