TB230
Abstract: a/SMD resistor 805
Text: July 16, 2014 TB230 Frequency = 20-1000MHz Pout = 100W Gain = 15dB Typical Vds = 28Vdc Idq = 0.8A Efficiency = 30-50% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 16, 2014 PH:(805)484-4210 FAX:(805)484-3393
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TB230
20-1000MHz
28Vdc
LB2401
484-33R6
85mil
100nF
TB230
a/SMD resistor 805
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TB234
Abstract: 1111X104KW500
Text: May 27, 2014 TB234 Frequency = 500-1000MHz Pout = 100W Gain = 16dB Vds = 28Vdc Idq = 0.8A Efficiency = 40% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 27, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012
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TB234
500-1000MHz
28Vdc
LB2401
200pF
85mil
70mil
100nF
TB234
1111X104KW500
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TB229
Abstract: amidon BN-61-202
Text: March 19, 2014 TB229 Frequency = 100-1000MHz Pout = 80W Gain = 14dB Vds = 28Vdc Idq = 0.8A Efficiency = 30 to 50% LB2401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 19, 2014 PH:(805)484-4210 FAX:(805)484-3393
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TB229
100-1000MHz
28Vdc
LB2401
UT-085
16AWG
FT-82-43
UT-070C-10
100nF
UT-034
TB229
amidon BN-61-202
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LB2401
Abstract: LDMOS
Text: polyfet rf devices LB2401 General Description This device is part of Polyfet's latest family of 28VDC LDMOS devices. Being an unmatched device and having low capacitances makes it ideal for broad band applications such as communications and broadcast. It is also suitable for
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LB2401
28VDC
1-1100MHz
LB2401
LDMOS
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MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
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L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
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