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    L14B Search Results

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    L14B Price and Stock

    Johanson Technology Inc 5400BL14B0100001T

    BALUN 4.9GHZ-5.87GHZ 50/100 0603
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    DigiKey 5400BL14B0100001T Digi-Reel 5,215 1
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    5400BL14B0100001T Cut Tape 5,215 1
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    5400BL14B0100001T Reel 4,000 4,000
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    Panduit Corp PSL-14BYL

    ALL WEATHER SECURITY PADLOCK, 1.
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    DigiKey PSL-14BYL Bulk 14 1
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    Festo HGL-1-4-B

    PILOTED CHECK VALVE
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    DigiKey HGL-1-4-B Bulk 11 1
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    Alpha Wire F221L1-4-BK004

    HEATSHRINK 1/4" X 200' BLACK
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    DigiKey F221L1-4-BK004 Bulk 8 1
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    Gigavac LLC GXL14B2C

    GX SERIES POWER CONTACTOR
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    DigiKey GXL14B2C Bulk 20
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    RS GXL14B2C Bulk 27 Weeks 20
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    L14B Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L14B Unknown Discontinued Transistor Data Book 1975 Scan PDF
    L14B1 General Electric Semiconductor Data Book 1971 Scan PDF
    L14B1 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    L14B2 General Electric Semiconductor Data Book 1971 Scan PDF
    L14B2 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    L14B3 General Electric Semiconductor Data Book 1971 Scan PDF
    L14B3 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    L14B4 General Electric Semiconductor Data Book 1971 Scan PDF
    L14B4 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    L14B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AVX tantalum marking

    Abstract: capacitor 107a 107A CAPACITOR avx date code marking code avx label avx taj 107A a107a marking 107A date code capacitor
    Text: Tantalum Division Product Update Change of LOT CODE format Introduction AVX is intending to modify the lot code format marked on each physical capacitor where size allows as well as on reel labels in order to maintain and strengthen batch identification and traceability. The original format has not provided an adequate variety of


    Original
    PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    MA3232

    Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 BF123 CA3036 FT4017 2n1613 replacement A431 BF121 DIODE SJ 98 DM01B

    transistor a640

    Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918

    photo transistor L14F

    Abstract: photo transistor 2n5777 2N5779 L1402 L14F 2N5780 L14A502 L14f photo transistor L14B1 photo transistor L14e2
    Text: OPTO ELECTRONICS DETECTORS— PHOTOTRANSISTORS Photo Current @ H = Tungsten 2mW/cm2 @ 2870° K II Min. mA JEDEC No. GE Type: Rise 8, Fall Times Typical Photo Current GaAs Source II Mat. (mA) II Min. (mA) II Max. (mA) V e to tf U se e) Min. Package Outline


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    PDF L14B1 L14B2 L14B3 L14B4 L14D1 2N5777 L14D2 2N5778 L14D3 2N5779 photo transistor L14F photo transistor 2n5777 L1402 L14F 2N5780 L14A502 L14f photo transistor photo transistor L14e2

    cq 721

    Abstract: am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b
    Text: í i í i í i n z ta a a a a a a a a a a a r n a a a a a a a a a a a a a i: 33a a a a a a n a a a a a ; a a a a a a a a n a a iia a r r ia a a a a a n a a iia a a r l a n g a s í i í i í i * i¿ w n r w a s a jn sü n n a n a n n n n íiíi íiíiíi n n s n n n


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    PDF F-28-2 F-42-1 F-48-2 cq 721 am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


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    PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    D2096

    Abstract: AM450 A06M1 R195P 1N150 L165 ST immo off R205P 2DBS N5605
    Text: m m :T % íi:v, V g g n “t a V i l s. « ÌK I « "K* II Ì a3 > > > > 5 'X '%, § sjr- % 5 "% s . c ^ 'o S ß « á W " ^ 1 O» KK i« C O ”¿ f >o « •tti AJ £ ? * 1 X % o 0* « « « P IF,> * % Ï 3 _ > 5 o < fe£ <* * r % m O *> \o o VI _> E W


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    PDF N5605 D2096 LA72602Mâ LA72602Mà 36mmX AM450 14QRg A0M51 A066W LA72602M D2096 AM450 A06M1 R195P 1N150 L165 ST immo off R205P 2DBS N5605

    L14B

    Abstract: No abstract text available
    Text: SONY CXK78V4861AQ-33 FEATURES DESCRIPTION •Single Chip Cache Subsystem for 486 CPU The SONY Cache-1 CV is a single chip cache subsystem designed to work with the 486 micro­ processor. This device is designed utilizing SONY’S proprietary Memory-intensive ASIC


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    PDF CXK78V4861AQ-33 prV4861AQ-33 200mV QFP-160P-L01 QFP160-P-2828-A DD072L7 QD072t L14B

    DIODE SJ 98

    Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995

    Untitled

    Abstract: No abstract text available
    Text: m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Series Field-Programmable Gate Arrays Features 2 • Flip-flop/latch options to allow programmable prior­ ity of synchronous set/reset vs. clock enable


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    PDF OR2C/2T26A OR2C/2T40A 240-Pin 256-Pin 304-Pin 352-Pin 432-Pin 600-Pin OR2C/2T15A, OR2C/2T26A

    Untitled

    Abstract: No abstract text available
    Text: Y A M A H A 'L S I Y T M 411B MD9624LV FAX/DATA/VOICE MODEM LSI • OUTLINE The YTM411B is a one-chip MODEM LSI applicable to both the FAX MODEM and Data MODEM and requires low power as it can be operated with a power supply in the range: 3.3 ~ 5V. The YTM411B is an upper-level chip of VAMAHA’s FAX/DATA MODEM LSI YTM403C and has


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    PDF MD9624LV YTM411B YTM403C 9600/7200/4800/2400/300bps 27ter, 2400/1200/600/300bps 22bis,

    transistor A431

    Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12


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    PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a

    SI345P

    Abstract: D28C3 250u5 D16P2 transistor 75U5 0 a darlington pair photo transistor L14B3 BDX66L D12X012 D28C8
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12


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    PDF L15D2 MCH2005F SI345P 250mA 300mW 100nA 500mW 350ns 600mW SI346P D28C3 250u5 D16P2 transistor 75U5 0 a darlington pair photo transistor L14B3 BDX66L D12X012 D28C8

    74LS189 equivalent

    Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
    Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.


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    PDF AMD-599 LM101 SN54LS01 132nd 74LS189 equivalent 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00

    A1381 transistor

    Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034

    Untitled

    Abstract: No abstract text available
    Text: m / H B Œ PM 600H SA120 X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In tG llilT IO C i M o d i/ iS Half Phase IGBT Inverter Output 600 Amperes/1200 Volts Description: Powerex Intellimod™ Intelligent Power Modules are isolated base


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    PDF SA120 Amperes/1200 20kHz.

    NS1000 n

    Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78

    UD1001

    Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA

    2sa525

    Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    sony motherboard diagram

    Abstract: No abstract text available
    Text: SONY CXK78V4861BQ-33/40 FEATURES DESCRIPTION • Single Chip Cache Subsystem for 486-class microprocessors The SO NY Cache-1 M is a single chip cache sub­ system designed to work with various 486-class microprocessors. The SO NY Cache-1 M is designed specifically for mobile computing appli­


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    PDF CXK78V4861BQ-33/40 486-class 200mV D0Q72ci` QFP-160P-L01 QFP160-P-2828-A sony motherboard diagram