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    Samsung Semiconductor KMM594000A-8

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    KMM594 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM594000 Samsung Electronics 4M x 9 CMOS DRAM SIMM Memory Module Scan PDF
    KMM594000-10 Samsung Electronics 4M x 9 CMOS DRAM Memory Module Scan PDF
    KMM594000-8 Samsung Electronics 4M x 9 CMOS DRAM Memory Module Scan PDF
    KMM594000A Samsung Electronics 4M x 9 CMOS DRAM SIMM Memory Module Scan PDF
    KMM594000A-10 Samsung Electronics 4M x 9 CMOS SIMM Memory Module Scan PDF
    KMM594000A-7 Samsung Electronics 4M x 9 CMOS SIMM Memory Module Scan PDF
    KMM594000A-8 Samsung Electronics 4M x 9 CMOS SIMM Memory Module Scan PDF
    KMM594000B Samsung Electronics 4M x 9 CMOS DRAM SIMM Memory Module Scan PDF
    KMM594000B-6 Samsung Electronics 4M x 9 CMOS DRAM SIMM Memory Module Scan PDF
    KMM594000B-7 Samsung Electronics 4M x 9 CMOS DRAM SIMM Memory Module Scan PDF
    KMM594000B-8 Samsung Electronics 4M x 9 CMOS DRAM SIMM Memory Module Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 130ns 150ns 180ns KMM594000A 30-pin KM41C4000AJ 20-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5941OOAKN Fast Page Mode Preliminary 4M x9 DRAM SIM M , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION T h e S a m s u n g K M M 5 94 1 OOAKN is a 4 M bit x 9 FEATURES • P e rfo rm an ce R ange: D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e


    OCR Scan     		PDF KMM5941OOAKN 44C4100AK 41C4000CJ

    Samsung Capacitor sms

    Abstract: km41c4000aj KM41C4000A
    Text: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM59400QA KMM594000A KM41C4000AJ 20-pin 30-pin KMM594000A- Samsung Capacitor sms KM41C4000A

    Untitled

    Abstract: No abstract text available
    Text: KMM594000 DRAM MODULES 4M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000 Is a 4M b i t x 9 Dynamic RAM high density memory module. The Samsung KMM594000 consist of nine KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000 KMM594000-8 KMM594000-10 100ns 150ns 180ns KMM594000 KM41C4000J 20-pin

    41C4000CJ

    Abstract: No abstract text available
    Text: DRAM MODULE KMM594100AKN Fast Page Mode 4 Mega Byte Preliminary \ 4Mx9 DRAM SIMM , 2K Refresh , 5 V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AKN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AKN consists of two CMOS


    OCR Scan     		PDF KMM594100AKN 24-pin 20-pin 30-pin 41C4000CJ

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF DD147b3 KMM594100N KMM594100N KM44C4100J 20-pin KM41C4000BJ 30-pin KMM5364100N-6

    TCA 720

    Abstract: m59400 KM41C4000BJ
    Text: KMM594000B DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc *RC KMM594000B-6 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns KMM594000B-8 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability


    OCR Scan     		PDF KMM594000B KMM594000B-6 KMM594000B-7 KMM594000B-8 110ns 130ns 150ns KMM594000B KM41C4000BJ TCA 720 m59400

    CQ 765

    Abstract: No abstract text available
    Text: KMM594020A DRAM MODULES 4 M x 9 CMOS DRAM SIMM Memory Module, Low Power GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tñC KMM594020A-7 70ns 20ns 130ns KMM594020A-8 80ns 20ns 150ns KMM594020A-10 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability


    OCR Scan     		PDF KMM594020A KMM594020A-7 KMM594020A-8 KMM594020A-10 100ns 130ns 150ns 180ns KMM594020A CQ 765

    KM41C4000A

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b4E D OOmSET 7^4142 1 ÖD « S h l G K DRAM MODULES KMM594020A 4M X 9 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020A is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM594020A KMM594020A KM41C4000ALJ 20-pin 30-pin 130ns KMM594020A-8 150ns KMM594020A-10 KM41C4000A

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM594000A 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70ns 20ns 130ns KM M 594000A- 8 80ns 20ns 150ns K M M 594000A -10 100ns 25ns 180ns KM M 594000A- 7 • • • • • • •


    OCR Scan     		PDF KMM594000A 130ns 94000A- 150ns 94000A 100ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B


    OCR Scan     		PDF G01S111 KMM594020B KMM594020B 20-pin 30-pin 22/iF KMM594020B-6 110ns KMM594020B-7

    WO4M

    Abstract: KMM594
    Text: KMM594100N DRAM MODULES 1 M x 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KMM594100N is a 4M b i t x 9 D ynam ic RAM high d e n sity m em ory m odule. The Sam sung K M M 5 9 4 1 0 0 N c o n s is t o f tw o 4M b it D R A M s


    OCR Scan     		PDF KMM594100N KMM5364100N-6 KMM5364100N-7 M5354100N-8 110ns 130ns 150ns KMM594100N KM44C4100J 20-pin WO4M KMM594

    km41c4000cj

    Abstract: ka5 capacitor
    Text: DRAM MODULE 4 Mega Byte KMM594000C1 Fast Page Mode 4Mx9 DRAM SIMM , 1K Refresh , 5V G E N E R A L DESCRIPTIO N FEATURES The Samsung KMM594000C1 is a 4M bit x 9 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM594000C1 consists of nine CMOS


    OCR Scan     		PDF KMM594000C1 20-pin 30-pin km41c4000cj ka5 capacitor

    594000A

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 94000A 41C4000AJ 20-pin 30-pin 94000A- 594000A

    KM41C4000BJ

    Abstract: KMM594000B-6 KMM594000B KMM594000B-7 KMM594000B-8 30-pin simm memory 30-pin simm memory dynamic 4Mx9 DRAM 30-pin SIMM
    Text: S A N S U N G E L E C T R O N I C S INC b 7 E T> • 7 T b m M 5 GDlSlDb KMM594000B T H 7 ■ SriGK DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc I rc 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns


    OCR Scan     		PDF KMM594000B KMM594000B-6 110ns KMM594000B-7 130ns KMM594000B-8 150ns cycles/16ms KM41C4000BJ 30-pin simm memory 30-pin simm memory dynamic 4Mx9 DRAM 30-pin SIMM

    irp 945

    Abstract: KM41C4000AJ 4Mx9 DRAM 30-pin SIMM connector SAMSUNG 30 PIN irp 540 30pin samsung KMM594000A KMM594000A-10 KMM594000A-7 KMM594000A-8
    Text: SA M S UN G E L E C T R O N I C S INC b4E D • 7 = ^ 4 1 4 2 0 0 1 4 5 1 1 S31 I SMGK KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tCAC tRC 70ns 20ns 130ns KMM594000A- 8 80ns 20ns 150ns


    OCR Scan     		PDF KMM594000A D014Sn KMM594000A- 130ns 150ns KMM594000A-10 100ns 180ns cycles/16ms irp 945 KM41C4000AJ 4Mx9 DRAM 30-pin SIMM connector SAMSUNG 30 PIN irp 540 30pin samsung KMM594000A KMM594000A-7 KMM594000A-8

    KM44C4100AJ

    Abstract: KM41C4000CJ
    Text: DRAM MODULE 4 Mega Byte KMM5941OOAN Fast Page Mode 4M x9 DRA M S IM M , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DES C R IPTIO N The S am sung KM M 594100A N is a 4M bit x 9 FEATURES • Performance Range: D ynam ic RAM high de nsity m em ory module. The


    OCR Scan     		PDF KMM5941OOAN 94100A 24-pin 20-pin 30-pin 594100AN KMM594100AN KM44C4100AJ KM41C4000CJ

    KMM5324100AV

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS DRAM Module Product Guide DRAM SIMM Based on 16M DRAM 5V 4 M x 8 . KMM584100AN-5/6/7/8. 4 M x 8 . KM M584100AKN-5/6/7/8. 4 M x 9 . KMM5941OOAN-5/6/7/8.


    OCR Scan     		PDF KMM584100AN-5/6/7/8. M584100AKN-5/6/7/8. KMM5941OOAN-5/6/7/8. KMM594100AKN-5/6/7/8. M5816000A/AT-5/6/7/8 KMM5816000AK-5/6W KMM5916000A/AT-5/6/7/8. KMM5916000AK-5/6/7/8. KMM5324100AV/AVG-5/6/7/8 KMM5322000W/WG-7/8. KMM5324100AV

    30 pin simm

    Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
    Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM


    OCR Scan     		PDF KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
    Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C


    OCR Scan     		PDF 1Mx32 1Mx33 1Mx36 1Mx40 2Mx32 2Mx36 1Mx9 DRAM 30-pin SIMM KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 4m dram 72-pin simm 32 DRAM 30-pin SIMM

    KM44C1000

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14


    OCR Scan     		PDF KM41C4000 KM41C1000L KM41C4001 M5361000A/AG/A1/A1G KMM5322000AV/AVG KMM5362000A/AG/A1/A1G KMM5401000A/AG KMM5402000A/AG KM44C1000

    ttl 74112

    Abstract: KMM594000 KMM594000-10 KMM594000-8 KM41C4000J 74112
    Text: SAMSUNG ELECTRONICS INC 4 2E » 7^4142 KM M594000 001D4Û2 b • DRAM MODULES 4 M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: T h e S am su ng K M M 59 4 0 00 is a 4 M b l t x 9 D yn am ic R A M high de n s ity m em ory m odu le. T h e S a m s u n g


    OCR Scan     		PDF KMM594000 0G104Ã KMM594000-8 150ns KMM594000-10 100ns 180ns cycles/16ms KMM594000 ttl 74112 KM41C4000J 74112