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    KMM532 Price and Stock

    Samsung Semiconductor KMM5321000BV-7

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    Samsung Semiconductor KMM5322104AU-6M

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    Samsung Semiconductor KMM5324104BK-6U

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    Samsung Semiconductor KMM5321204AW-6

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    Samsung Semiconductor KMM5321000BV-6

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    KMM532 Datasheets (119)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM5321000BV-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321200AW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200C2W-5 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321200C2W-6 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321200C2WG Samsung Electronics 1M x 32 DRAM SIMM (1MX16 Base) Original PDF
    KMM5321200C2WG-5 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321200C2WG-6 Samsung Electronics 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V Original PDF
    KMM5321204AW-6 Samsung Electronics 1M x 32 DRAM SIMM, 5V, 1K Refresh Scan PDF

    KMM532 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG

    KMM53232004BK

    Abstract: KMM53232004BKG km44c16104bk
    Text: DRAM MODULE KMM53232004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53232004BK/BKG KMM53232004BK/BKG 16Mx4, KMM53232004B 32Mx32bits 16Mx4bits 72-pin KMM53232004BK KMM53232004BKG km44c16104bk

    KMM53232000BK

    Abstract: KMM53232000BKG
    Text: DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53232000BK/BKG KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits 16Mx4bits 72-pin KMM53232000BK KMM53232000BKG

    KMM5321200C2W

    Abstract: KMM5321200C2WG
    Text: DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE


    Original     		PDF KMM5321200C2W/C2WG KMM5321200CW/CWG KMM5321200C2W/C2WG 1Mx16, KMM5321200C2W 1Mx32bits 1Mx16bits KMM5321200C2WG

    s - ck5t

    Abstract: CA52
    Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52

    KM416C1200AJ

    Abstract: ra57
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF M5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin KMM5321200AW KM416C1200AJ ra57

    KMM5321000BV-7

    Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
    Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns


    OCR Scan     		PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 110ns 130ns 150ns KMM5321000BV-8 cycles/16ms KMM5321000BV 1Mx4 dram simm caso Samsung Capacitor DO30

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits

    KMM5322000BV

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7


    OCR Scan     		PDF KMM5322000BV/BVG M5322000BV-6 M5322000B KMM5322000BV 20-pin 72-pin 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5328004BK/BKG KMM5328104BK/BKG KMM5328104BK/BKG 8Mx32 KMM53280 KMM5328004BK cycles/64ms KMM5328004BKG

    Untitled

    Abstract: No abstract text available
    Text: b?E D S A M S UN G E L E C T R O N I C S INC • TThMlME 00132=12 BIM ■ S M G K KMM5328000V/VG/VP DRAM MODULES 8Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • tcAC tRC KMM5328000V-6 60ns


    OCR Scan     		PDF KMM5328000V/VG/VP 8Mx32 KMM5328000V-6 110ns 130ns KMM5328000V-8 KMM5328000V-7 KMM5328000V bitsx36

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •


    OCR Scan     		PDF KMM5322000AV/AVG KMM5322000AV- KMM5322000AV-10 130ns 150ns 180ns KMM532200QW bitsx32 KMM532200QAV

    8Mx32 dram

    Abstract: Samsung Capacitor sse
    Text: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The


    OCR Scan     		PDF KMM5328000AV/AVG 8Mx32 KMM5328000AV 24-pin 72-pin 5328000AV KMM5320OOOAV 8Mx32 dram Samsung Capacitor sse

    M53241

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM53241OOAK/AKG 4Mx32 KMM5324100AK 24-pin 72-pin 5324100AK M5324100AK KM44C4100AK M53241

    CX-53

    Abstract: KM48C2100A cx53 KMM53221 KM48C2100AJ
    Text: DRAM MODULE 8 Mega Byte KMM53221OOAU /AUG Fast Page Mode 2Mx32 DRAM SIMM , 2K Refresh, 5 Using 2Mx8 B/W DRAM J GENERAL DESCRIPTION FEATURES The Samsung KMM5322100AU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322100AU consists of four CMOS


    OCR Scan     		PDF KMM53221OOAU 2Mx32 KMM5322100AU 28-pin 72-pin CX-53 KM48C2100A cx53 KMM53221 KM48C2100AJ

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KMM5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 KMM5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability


    OCR Scan     		PDF KMM5321OOOW/WG KMM5321000W 42-pin 72-pin 22/xF M5321000W-7 KMM5321000W-8 M5321000W-10

    HX-5v

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM 7 GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS


    OCR Scan     		PDF KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin 110ns HX-5v

    Samsung 2MX32 EDO

    Abstract: Samsung 2MX32 EDO simm module
    Text: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESC RIPTIO N FEATURES • Part Identification The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5322104BKU/BKUG KMM5322104BKU/BKUG 2Mx32 KMM5322104BKU 28-pin 72-pin KMM5322104BKU Samsung 2MX32 EDO Samsung 2MX32 EDO simm module

    Untitled

    Abstract: No abstract text available
    Text: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification


    OCR Scan     		PDF KMM53280 8Mx32bits KMM5328000CK/CKG KMM53281OOCK/CKG KMM5328000CK/CKG KMM53281 5328000CK cycles/64ms KMM5328000CKG

    a512K

    Abstract: KMM532512CV
    Text: SAMSUNG ELECTRONICS INC b7E 1> • 7 ^ 4 1 4 2 001S04b b42 I SMGK KM M532512CV/CVG DRAM MODULES 5 1 2K x 3 2 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflAC • • • • • • • tcAc tflC KMM532512CV-6 60ns 15ns 110ns


    OCR Scan     		PDF M532512CV/CVG 001S04b KMM532512CV a512K 20-pin 72-pin 22/iF KMM532512CV-6

    Untitled

    Abstract: No abstract text available
    Text: KMM5328100V/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM5328100V-6 60ns 15ns 110ns KMM5328100V-7 70ns 20ns 130ns KMM5328100V-8 80ns 20ns 150ns The KMM5328100V is a S ingle in-line M em ory M odule


    OCR Scan     		PDF KMM5328100V/VG/VP KMM5328100V 24-pin 72-pin KMM5328100V-6 KMM5328100V-7 KMM5328100V-8 110ns

    24w04

    Abstract: KMM5322100BK
    Text: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESCRIPTIO N FEATURES • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM53221 KMM53221OOBKU/BKUG 2Mx32 KMM5322100BKU 28-pin 72-pin 110ns 24w04 KMM5322100BK

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322104CKU/CKUG KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic Part Identification


    OCR Scan     		PDF KMM5322104CKU/CKUG KMM5322104CKU/CKUG KMM5322104CKU 2Mx32bits cycles/32ms 5322104CKUG 28-pin

    KM44C4104bk

    Abstract: No abstract text available
    Text: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		PDF 8Mx32 KMM53280 24-pin 72-pin KMM5328004B KMM5328104BK/BKG KMM5328004BK/BKG KMM5328104BK/BKG KM44C4104bk