Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KMM366S403CT Search Results

    KMM366S403CT Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM366S403CTL Samsung Electronics PC66 SDRAM MODULE Original PDF
    KMM366S403CTL-G0 Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S403CTS-G8 Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S403CTS-GH Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S403CTS-GL Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF

    KMM366S403CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM48S2020CT-G10

    Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 66MHz KM48S2020CT-G10 KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G

    KM48S2020

    Abstract: KMM366S403CT-GL KMM366S403CT-GH
    Text: KMM366S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.


    Original     		PDF KMM366S403CT PC100 KMM366S403CT 4Mx64 100MHz KM48S2020 KMM366S403CT-GL KMM366S403CT-GH

    KM48S2020CT G10

    Abstract: KMM366S403CTL KMM366S403CTL-G0
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 KM48S2020CT KM48S2020CT G10 KMM366S403CTL-G0

    Untitled

    Abstract: No abstract text available
    Text: KMM366S403CTS PC100 Unbuffered DIMM Revision History [Rev.2] March 24. 1999 Package Dimension changed. Rev.2 Mar. 1999 KMM366S403CTS PC100 Unbuffered DIMM KMM366S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM366S403CTS PC100 KMM366S403CTS 4Mx64 400mil 168-pin

    KM48S2020CT G10

    Abstract: KMM366S403CTS-G8 KMM366S403CTS-GH KMM366S403CTS-GL KM48S2020
    Text: PC100 SDRAM MODULE KMM366S403CTS Revision History [Rev.2] March 24. 1999 Package Dimension changed. Rev.2 Mar. 1999 KMM366S403CTS PC100 SDRAM MODULE KMM366S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


    Original     		PDF PC100 KMM366S403CTS KMM366S403CTS 4Mx64 400mil 168-pin KM48S2020CT G10 KMM366S403CTS-G8 KMM366S403CTS-GH KMM366S403CTS-GL KM48S2020

    KMM366S403CTL-GO

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S403CTL KMM366S403CTL 400mil 168-pin 000DIA KM48S2020CT KMM366S403CTL-GO

    KMM366S403CT-GL

    Abstract: No abstract text available
    Text: KMM366S403CT PC100 SDRAM MODULE KMM366S403CT SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S403CT KMM366S403CT PC100 4Mx64 400mil 168-pin KMM366S403CT-GL

    Untitled

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs): ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.


    OCR Scan     		PDF KMM366S403CTL 200mV. 4Mx64 KMM366S403CTL 150Max KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S403CTS KMM366S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF PC100 KMM366S403CTS KMM366S403CTS 4Mx64 KMM366S403CTS-G8 125MHz KMM366S403CTS-GH 100MHz

    Untitled

    Abstract: No abstract text available
    Text: KMM366S403CT PC100 SDRAM M O D U L E Re vis ion Hist ory Revision .0 Feb. 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, -C in to be measured at V DD llL(DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C,


    OCR Scan     		PDF KMM366S403CT PC100 4Mx64 150Max

    Untitled

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.


    OCR Scan     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 150Max KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S403CTS KMM366S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S403CTS KMM366S403CTS PC100 4Mx64 400mil 168-pin

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT