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    KM684000BL Price and Stock

    Samsung Semiconductor KM684000BLG-7L

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    Bristol Electronics KM684000BLG-7L 13
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    Quest Components KM684000BLG-7L 12
    • 1 $13.506
    • 10 $9.004
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    Samsung Semiconductor KM684000BLP-7

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    Bristol Electronics KM684000BLP-7 9
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    SEC KM684000BLT-7L

    IC,SRAM,512KX8,CMOS,TSOP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM684000BLT-7L 26
    • 1 $12.6563
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    Samsung Semiconductor KM684000BLT-7L

    IC,SRAM,512KX8,CMOS,TSOP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM684000BLT-7L 12
    • 1 $11.25
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    KM684000BLT-7L 9
    • 1 $11.25
    • 10 $7.5
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    Samsung Semiconductor KM684000BLG-5T

    IC,SRAM,512KX8,CMOS,SOP,32PIN,PLASTIC
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    Quest Components KM684000BLG-5T 3
    • 1 $6.93
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    KM684000BL Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM684000BL Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-5 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-7 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLG-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-5 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-7 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLGI-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLI Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLI-L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BL-L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-5 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-7 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLP-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLR-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLR-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLRI-5L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000BLRI-7L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF

    KM684000BL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM684000BLR-7L IL08 4 M 524,288 x 8 -BIT SRAM —TOP VIEW— A15 IN 31 2 A16 IN A17 IN 30 3 A14 IN WE IN 29 4 A12 IN A13 IN 28 5 A7 IN A8 IN 27 6 A6 IN A9 IN 26 7 A5 IN A11 IN 25 8 A4 IN OE IN 24 9 A3 IN A10 IN 23 10 A2 IN CS IN 22 11 A1 IN I/O8 IN 21 12 A0 IN


    Original     		PDF KM684000BLR-7L

    Untitled

    Abstract: No abstract text available
    Text: KM684000BLT-7L IL08 4 M 524,288 x 8 -BIT SRAM —TOP VIEW— A16 IN 2 31 A15 IN A14 IN 3 30 A17 IN A12 IN 4 29 WE IN A7 IN 5 28 A13 IN A6 IN 6 27 A8 IN A5 IN 7 26 A9 IN A4 IN 8 25 A11 IN A3 IN 9 24 A2 IN 10 23 A10 IN A1 IN 11 22 A0 IN 12 21 I/O8 IN I/O1 IN 13


    Original     		PDF KM684000BLT-7L

    PEP Modular Computers GmbH

    Abstract: VME ACFAIL PEP Modular Computers tundra universe ii PEP Modular Computers compactPCI PEP VME tundra universe socket am3 pinout PEP Modular Computers GmbH price list PEP Modular Computers software
    Text: VMP2 Power PC-based CPU Board for VME Applications Manual ID: 24855, Rev. Index 02 November 2002 The product described in this manual is in compliance with all applied CE standards. Preface VMP2 Revision History Manual/Product Title: VMP2 Manual ID Number:


    Original     		PDF

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    DIL600

    Abstract: CP-RIO3-01 PEP Modular Computers GmbH CP600 pep modular cxm km684000blp sec KM684000BLP-7 vme 3U PEP Modular Computers GmbH price list PEP VME
    Text: CP321 Power PC-based CPU Board for CompactPCI Applications Manual ID: 24977, Rev. Index 02 July 2003 The product described in this manual is in compliance with all applied CE standards. Preface CP321 Revision History Manual/Product Title: CP321 Manual ID Number:


    Original     		PDF CP321 800-SALESKONTRON DIL600 CP-RIO3-01 PEP Modular Computers GmbH CP600 pep modular cxm km684000blp sec KM684000BLP-7 vme 3U PEP Modular Computers GmbH price list PEP VME

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 br1632 br1225

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L CMOS Logic Family Specifications km684000blt
    Text: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA


    Original     		PDF KM684000B 512Kx8 15/35mA 10/45mA 100pF 047MAX 002MIN KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L CMOS Logic Family Specifications km684000blt

    KM684000BLP

    Abstract: KM684000BLP-7 KM684000BLP-5L KM684000BLR-5L KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-7L
    Text: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF KM684000B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX KM684000BLP KM684000BLP-7 KM684000BLP-5L KM684000BLR-5L KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-7L

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
    Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		PDF KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    M684000

    Abstract: 684000BLG
    Text: K M 68 40 00 B Fami l y D o o u m CMOS SRAM e n t T itle 51 2 K x 8 bit Low Power C M O S Static RAM Revisio n N o . H istory D raft D a te Rem ark 0.0 Initial Draft December 7th 1996 Advance 0.1 Revise -C h a n g e d Operating current by reticle revision


    OCR Scan     		PDF 15/35m 10/45mA 100pF M684000 684000BLG

    Untitled

    Abstract: No abstract text available
    Text: KM684000B Family CMOS SRAM Document Tills 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35m A -> 45m A


    OCR Scan     		PDF KM684000B 512Kx8 10/45mA 10OpF

    km684000blp-7l

    Abstract: km684000blp
    Text: Prem ilinary KM684000B Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		PDF KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP km684000blp-7l km684000blp

    KM684000BLP-71

    Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
    Text: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package


    OCR Scan     		PDF KM684000B S12Kx8 32-DIP-600 32-SOP-52S, 32-TSOP2-400F/R KM684000BL KM684000BL-L KM684000BLI KM684000BLP-71 KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L

    684000BLP-7L

    Abstract: 684000BLG
    Text: CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0 .0 Initial D raft December 7, 1996 Advance 0.1 Revise - Changed O perating current by reticle revision Icc at write : 35m A - » 45m A Ic c i at read/write : 1 5 /3 5 m A ^ 10/45mA


    OCR Scan     		PDF KM684000B 512Kx8 10/45mA 100pF 70/100ns 55/70ns 004MAX1 684000BLP-7L 684000BLG

    LG tft circuit diagram

    Abstract: No abstract text available
    Text: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial Drall December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35mA -» 45mA Icci at read/write : 15/35mA


    OCR Scan     		PDF KM684000B 512Kx8 15/35mA 10/45mA 100pF 525mil) 76fcQ LG tft circuit diagram