KM6161000BLT7L
Abstract: KM6161000BLTI-7L
Text: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996
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KM6161000B
KM6161000BLT7L
KM6161000BLTI-7L
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Untitled
Abstract: No abstract text available
Text: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996
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KM6161000B
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TT1102
Abstract: 100PF
Text: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The KM6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536
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KM6161000BLI
64Kx16
550pW
275nW
660mW
I/01-I/08
KM6161000BLTI/LTI-L:
400mil
KM6161000BLRI/LR1-L:
TT1102
100PF
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION •Industrial Temperature Range : -40 to 85°C The KM6161000BLI/LI-L is a 1,048,576-bit high speed >Fast Access Time : 70/100 ns max.
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KM6161000BLI
64Kx16
KM6161000BLI/LI-L
576-bit
550uW
6161000BLI/LI-L
660mW
Q021271
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KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L
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256Kb»
32KX8
KM62256CI-5/5L
KM62256CLE
KM62256CLI-7/7L
KM62256DL-5/5L
KM62256DLI-7/7L
512Kb»
64Kx8
KM68512AL-5/5L
KM736V789T-60
8AEL
65z7
KM68U512ALE-L
KM736V689T-8
KM732V595AT
KMB16
36SOJ
KM68U4000A
KM68V2000L-8L
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Untitled
Abstract: No abstract text available
Text: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : Poly Load • Organization : 64K x16 _ • Data Byte Control : LB=I/O i ~8, UB=I/09~16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V Min
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KM6161000B
44-TSOP2-4QOF/R
6161000B
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KM6161000BLT5L
Abstract: No abstract text available
Text: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package
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KM6161000B
44-TSOP
D03bbbb
KM6161000BLT5L
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Untitled
Abstract: No abstract text available
Text: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996
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KM6161000B
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C-4555
Abstract: c4555 32TSOP
Text: M E M O R Y ICs FUNCTION G UIDE 1. Low Power SRAM 5V Operation Density 256K 512K 1M Org. Product No' 32K x 3 64K x 3 128K x 8 6 4 K x 16 4M 512K x 8 Icc2/lsbl Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 C 45/55/70 70/100 70/20 28-TSOP(l) Reverse KM62256CLE
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KM62256CL
KM62256CL-L
KM62256CLE
KM62256CLE-L
KM62256CLI
KM62256CU-L
28-TSOP
28-SOP
32-TSOP
C-4555
c4555
32TSOP
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KM616U1000BL-L
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI
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KM62256CL
KM62256CL-L
KM62256CLE
KM62256CLE-L
KM62256CLI
KM62256CLI-L
28-TSOP
28-DIP
28-SOP
KM68512CL
KM616U1000BL-L
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Untitled
Abstract: No abstract text available
Text: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft August 12th 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15th 1996 Final
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KM6161000B
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Untitled
Abstract: No abstract text available
Text: KM61610QQB Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • • • • • • . The KM6161000B fam ily is fabricated by SAMSUNG’S advanced CMOS process technology. The fam ily support vari ous operating temperature ranges and has various package
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KM61610QQB
44-TSOP2-400F/R
KM6161000B
KM6161OOh
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a13e
Abstract: No abstract text available
Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min
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KM6161000B
64Kx16
64Kx16
44-TSOP
a13e
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