Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM416V1204B Search Results

    SF Impression Pixel

    KM416V1204B Price and Stock

    Samsung Semiconductor KM416V1204BT-L6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416V1204BT-L6 467
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor KM416V1204BJ-L6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416V1204BJ-L6 4
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    KM416V1204B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V1204BJ Samsung Electronics 1M x 16-Bit CMOS DYNAMIT RAM WITH EXTENDED DATA OUT Scan PDF
    KM416V1204BJ-5 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416V1204BJ-6 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416V1204BJ-7 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416V1204BJ-L5 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416V1204BJ-L6 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416V1204BJ-L7 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416V1204BT-5 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416V1204BT-6 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416V1204BT-7 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416V1204BT-L5 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416V1204BT-L6 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416V1204BT-L7 Samsung Electronics 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF

    KM416V1204B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    Original     		KMM366F224CJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin KMM366F224CJ1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224BJ1 KMM366F224BJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224BJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224BJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    Original     		KMM366F224BJ1 KMM366F224BJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin PDF

    km416c1204

    Abstract: No abstract text available
    Text: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B 1Mx16Bit 1Mx16 km416c1204 PDF

    16v1204

    Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
    Text: KM416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1204BJ 1Mx16Bit 1Mx16 Q323tà 5CK44 -TSOP2-400R 825-ooc 35-q1q 003b2b0 16v1204 C1204B KM416V1204BJ 74142 74142 NOTE PDF

    16V1204

    Abstract: No abstract text available
    Text: KM416V1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1204BT 1Mx16 -TSOP2-400F 5CK44 -TSOP2-400R 825-ooo< 003b2bD 16V1204 PDF

    04BJ

    Abstract: I2142 v10204b
    Text: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B 16Bit 1Mx16 04BJ I2142 v10204b PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1004BJ x16Bit 1Mx16 30bSS 40SOJ 7Rb4142 Q030b5t> PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference PDF

    030b4T

    Abstract: C1204B
    Text: KM416V1004BJ ELECTRONICS CMOS D R A M 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1004BJ 16Bit 1Mx16 7Rb4142 03Qb5 030b4T C1204B PDF

    XMP 820

    Abstract: C1204B 3Q55
    Text: KM416C1004BJ ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1004BJ 16Bit 1Mx16 003Q2bb XMP 820 C1204B 3Q55 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1004BJ 1Mx16 DD302t4 D0302bS Q03D2bb PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332F104BT-L KMM332F124BT-L DRAM MODULE KMM332F104BT-L & KMM332F124BT-L Fast Page with EDO Mode 1Mx32 DRAM DIMM, 1Mx16, Low P o w e r, 4K & 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332F10 2 4BT is a 1M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332F104BT-L KMM332F124BT-L KMM332F124BT-L 1Mx32 1Mx16, KMM332F10 1Mx16bit 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DR A M M O D U L E KM M 374F1 24B J1 KM M 374F1 24B J1 ED O M o d e wi t h ou t buffer 1M x 72 DRAM DIMM with ECC using 1 M x16 & 1 Mx4, 1K Refresh, 3.3V G E N E R A L DESCRIPTION FE A TU R ES The Samsung KMM374F124BJ1 is a 1Mx72bits Dynamic RAM Part Identification


    OCR Scan     		374F1 KMM374F124BJ1 1Mx72bits 1Mx16bits 400mil 300mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F104BT-L KMM332F124BT-L DRAM MODULE KMM332F104BT-L & KMM332F124BT-L Fast Page with EDO Mode 1M x 32 DRAM SO DIM M using 1M X 16, 1K & 4K Ref., 3.3V, Low pow er/Self-R efresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F10 2 4BT is a 1Mx32bits Dynamic


    OCR Scan     		KMM332F104BT-L KMM332F124BT-L KMM332F104BT-L KMM332F124BT-L KMM332F10 1Mx32bits 332F10 1Mx16bits 44-pin 72-pin PDF

    C1204B

    Abstract: tsop 3021 DIN 3021 STANDARD AA3021
    Text: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1004BT 16Bit 1Mx16 71bm42 302tib C1204B tsop 3021 DIN 3021 STANDARD AA3021 PDF

    C1204B

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1004BT 16Bit 1Mx16 C1204B PDF

    C1204B

    Abstract: t2g memory
    Text: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1204BJ 16Bit C1204B t2g memory PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004BT CMOS DRAM ELECTR O NICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1004BT 1Mx16 416C1004BT PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a lamily of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1004BT 1Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F124BJ KMM372F124BJ Fast Page with EDO Mode 1M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124BJ is a 1Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F124BJ


    OCR Scan     		KMM372F124BJ KMM372F124BJ 1Mx16 1Mx72bits 1Mx16bits 400mil 300mil 16bits PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1204BJ 1Mx16 16C1204BJ 40SOJ PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1204BT 1Mx16 416C1204BT D03D425 DD3G42h PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332F204BT-L KMM332F224BT-L DRAM MODULE KMM332F204BT-L / KMM332F224BT-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL FEATURES DESCRIPTION The Samsung KMM332F20 2 4BT is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332F204BT-L KMM332F224BT-L KMM332F204BT-L KMM332F224BT-L 2Mx32 KMM332F20 1Mx16bit 44-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a2M x64bits Dynamic RAM • Part Identification high density memory module. The Samsung KMM366F224CJ1


    OCR Scan     		KMM366F224CJ1 KMM366F224CJ1 1Mx16, x64bits cycles/16ms, 1Mx16bits 400mil PDF