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    Samsung Semiconductor KM416C1200AJ-6

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    Quest Components KM416C1200AJ-6 16
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    Samsung Semiconductor KM416C1200AJ-7

    1M X 16 FAST PAGE DRAM, 70 ns, PDSO42
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    KM416C1200AJ Datasheets Context Search

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    KM416C1200AJ-6

    Abstract: No abstract text available
    Text: 8MB 72 PIN FPM DRAM SIMM With 1Mx16 5VOLT TS2M3260R Description Features The TS2M3260R is a 2M by 32-bit dynamic RAM • 2,097,152-word by 32-bit organization. module with 4 pcs of 1Mx16 DRAMs assembled on the • Fast Page Mode operation. printed circuit board.


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    1Mx16 TS2M3260R TS2M3260R 32-bit 152-word KM416C1200AJ-6 M5M418160BJ-6 KM416C1200AJ-6 PDF

    KM416C1200AJ

    Abstract: ra57
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


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    M5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin KMM5321200AW KM416C1200AJ ra57 PDF

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


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    KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41 PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM372C125AJ KMM372C125AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372C125A is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C125A consists of four CMOS


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    KMM372C125AJ KMM372C125AJ 2Mx72 KMM372C125A 1Mx16bit 400mil 300mil PDF

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    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns


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    KM416C1200A/A-L/A-F KM416C1200A-6/A-L6/A-F6 110ns KM416C1200A-7/A-L7/A-F7 130ns KM416C1200A-8/A-L8/A-F8 150ns cycles/16ms cycles/128ms PDF

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    Abstract: No abstract text available
    Text: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


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    KMM5322200AW KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW cycles/16 KMM5322200AWG PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322200AW/AWG KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


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    KMM5322200AW/AWG KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW 42-pin 72-pin PDF

    KM416C1200A

    Abstract: KM416C1200AT KM416C1200AJ
    Text: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tR C KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns


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    KM416C1200A/A-L/A-F KM416C1200A/A-L/A-F KM416C1200A/A- 42-LEAD 44-LEAD KM416C1200A KM416C1200AT KM416C1200AJ PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124AJ consists of four CMOS


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    KMM364C124AJ 1Mx64 1Mx16, KMM364C124AJ 44-pin 400mil 48pin 168-pin PDF

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The Samsung KM M 5321200AW consists of tw o CMOS


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    KMM5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 5321200AW KMM5321200AW cycles/16 KM416C1200AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5321200AW D RAM Module ELECTRONICS KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS


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    KMM5321200AW KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C224AJ KMM364C224AJ Fast Page Mode 2M x64 DRAM DIMM, based on 1M x 16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KMM364C224AJ is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C224AJ 1024 cycles/16ms, SOJ


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    KMM364C224AJ KMM364C224AJ cycles/16ms, x16bit 42-pin 48pin 168-pin PDF

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


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    KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW 42-pin 72-pin KM416C1200AJ PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322200AW/AWG KM M5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G ENERA L DESC RIPTIO N FEATURES T h e S a m su n g K M M 5 3 2 2 2 0 0 A W is a 2M b it x 32 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e


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    M5322200AW/AWG KMM5322200AW/AWG 2Mx32 1Mx16 KM416C1200AJ PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The KMM372C225A - 6 KMM372C225A - 7


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    KMM364C124AJ KMM364C124AJ 1Mx64 1Mx16, KMM372C225A 1Mx16bit 44-pin PDF

    TR BC

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372C225AJ KMM372C225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372C225A is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C225A consists of eight CMOS


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    KMM372C225AJ 2Mx72 KMM372C225AJ KMM372C225A 1Mx16bit 400mil 300mil 48pin 168-pin TR BC PDF

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE KM M5362203AW/AWG KM M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESC RIPTIO N FEATURES The Sam sung KMM5362203AW is a 2M bit x 36 Dynam ic RAM high density m em ory module. The Samsung KM M 5362203AW consists of four CMOS


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    M5362203AW/AWG M5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW 5362203AW 24-pin 72-pin 362203A KMM5362203AW KM416C1200AJ PDF

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    Abstract: No abstract text available
    Text: KMM364C224AJ DRAM MODULE KMM364C224AJ Fast Page Mode 2Mx64 DRAM DIMM, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224AJ is a 2M bit x 64 Dynamic RAM high density m em ory m odule. The • Performance Range: Samsung KMM364C224AJ consists of eight CMOS


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    KMM364C224AJ KMM364C224AJ 2Mx64 1Mx16bit 44-pin 400mil 48pin 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16,1K Refresh, 5V G E N E R A L DESCRIPTION FE A T U R E S The Samsung KMM 364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KM M 364C124AJ consists of four C M O S


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    KMM364C124AJ KMM364C124AJ 1Mx64 1Mx16 364C124AJ 1Mx16bit 42-pin 400mil 48pin PDF

    KM416C1200AJ

    Abstract: km44c1003cj kmm5361203aw
    Text: DRAM MODULE 4 Mega Byte KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The


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    KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KM416C1200AJ km44c1003cj PDF