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    KM23C8000 Search Results

    KM23C8000 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C8000D-10 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000D-12 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000D-15 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000DG-10 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000DG-12 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF

    KM23C8000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 1,048,576 x 8 bit organization Fast access time : 100ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original     		PDF KM23C8000D 100ns KM23C8000D 32-DIP-600 KM23C8000DG 32-SOP-525 118MAX 822MAX

    32-SOP-525

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original     		PDF KM23C8000D 100ns KM23C8000D 32-DIP-600 KM23C8000DG 32-SOP-525 32-SOP-525

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


    Original     		PDF MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000B G ELECTRONICS CMOS Mask ROM 8M-Bit (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :100ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.) Standby : 50 fiA (max.)


    OCR Scan     		PDF KM23C8000B 100ns KM23C8000B 32-DIP-600 KM23C8000BG 32-SOP-525 576x8bit.

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C8000D G 8M-Bit (1 Mx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1,0 48,576 x 8 bit org an izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +5V C u rrent con sum p tion O perating : 50m A (m ax.) S ta n d b y


    OCR Scan     		PDF KM23C8000D

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000P G CMOS MASK ROM 8M-Bit (1Mx8) CMOS M ASK ROM FEATURES G EN ERA L DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating: 50mA(Max.) Standby : 50fiA(Max.)


    OCR Scan     		PDF KM23C8000P 100ns 50fiA KM23C8000D 32-DIP-600 8000D 32-SOP-525 KM23C8000D 100pF

    mask rom

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION . . . . The KM23C8Q00D(G) is a fully static mask programmable ROM organized 1,048,576 x 8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


    OCR Scan     		PDF KM23C8000D 100ns KM23C8000D IP-600 KM23C8000DG 32-SOP-525 KM23C8Q00D 100pF mask rom

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000C G CMOS Mask R O M ELECTRONICS 8M-BÏÏ (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :120ns(max.) • Supply voltage : single +5V • Current consumption Operating :60 mA(max.) Standby : 50 ¡Jf\ (max.)


    OCR Scan     		PDF KM23C8000C 120ns KM23C8000C 32-DIP-600 KM23C8000CG 32-SOP-525 576x8bit.

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D n 7=1^142 G Q lllb B b CMOS MASK ROM KM23C8000 8M-BH 1M X 8 CMOS MASK ROM FEATURES • • • • • • • • • 1,048,576 x 8 bit organization Fast access tim e: 150ns (max.) Supply voltage: single + 5 V C urrent consum ption


    OCR Scan     		PDF KM23C8000 150ns 32-pln, KM23C8000) 23C8000G)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000B is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. •


    OCR Scan     		PDF KM23C8000B 576x8 100ns 50/iA 32-pin, asynM23C80006 KM23C8000B)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C8000H CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000H is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF KM23C8000H KM23C8000H 576x8 100ns 32-pin, KM23C8000H) KM23C8000HG)

    MQ4A

    Abstract: 32-SO
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C8000D(G) is • • • • 1,048,576 x 8 bit organization Fast access tim e : 100ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.)


    OCR Scan     		PDF KM23C8000D 100ns 23C8000D 32-DIP-600 23C8000DG 32-SO P-525 23C8000D 32-DIP-600) MQ4A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> • 7 ^ 4 1 4 5 0D17D30 DbT I SMGK KM23C8000B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000B is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using


    OCR Scan     		PDF 0D17D30 KM23C8000B 100ns 32-pin, 0D17D33 KM23C8000B) KM23C8000BG)

    KM23C8000A

    Abstract: No abstract text available
    Text: KM23C8000A CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000A is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. • •


    OCR Scan     		PDF KM23C8000A KM23C8000A 150ns 32-pin, KM23C8000A) KM23C8000AG)

    KM23C8000A

    Abstract: No abstract text available
    Text: KM23C8000A CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES • • • • • • • • • 1 ,0 4 8 ,5 7 6 x 8 bil organization Fast access time: 150ns (max.) Supply voltage: single + 5 V Current consumption Operating: 50mA (max.) Standby : 50/jA (max.)


    OCR Scan     		PDF KM23C8000A 150ns 32-pin, KM23C8000A KM23C8000A) KM23C8000AG)

    Untitled

    Abstract: No abstract text available
    Text: KM23C800QA G CMOS MASK ROM 8M-BH (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000A is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. •


    OCR Scan     		PDF KM23C800QA 576x8 150ns 32-pin, KM23C8000A KM23C8000A) KM23C8000AG)

    23c8000

    Abstract: KM23C8000
    Text: KM23C8000 CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 23C 8000 ¡s a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. •


    OCR Scan     		PDF KM23C8000 150ns 32-pin, 23C8000) 23C8000G) 23c8000 KM23C8000

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


    OCR Scan     		PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    KM23C16005AG

    Abstract: 44TSOP2 44-TSOP2
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16


    OCR Scan     		PDF KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7


    OCR Scan     		PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A