MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ236W82RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 55 mW Forward current IF 20 mA
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2002/95/EC)
LNJ236W82RA
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LNJ836W83RA
Abstract: KLTFTN2K3600
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ836W83RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit PD 55 mW Forward current IF 20 mA Pulse forward current *
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Original
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2002/95/EC)
LNJ836W83RA
100asures
LNJ836W83RA
KLTFTN2K3600
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KLTFTN2K3600
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ436W82RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 55 mW Forward current
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Original
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2002/95/EC)
LNJ436W82RA
KLTFTN2K3600
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJC36X8ARA1 Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 40 mW Forward current IF 10 mA
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2002/95/EC)
LNJC36X8ARA1
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ936W8CRA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 65 mW Forward current IF 15 mA
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Original
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2002/95/EC)
LNJ936W8CRA
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PDF
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KLTFTN2K3600
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ036X8ARA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color Symbol Rating Unit Power dissipation PD 40
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Original
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2002/95/EC)
LNJ036X8ARA
KLTFTN2K3600
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PDF
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LNJC36X8ARA1
Abstract: KLTFTN2K3600
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJC36X8ARA1 Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 40 mW Forward current
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Original
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2002/95/EC)
LNJC36X8ARA1
LNJC36X8ARA1
KLTFTN2K3600
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ836W83RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit PD 55 mW Forward current IF 20 mA Pulse forward current *
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Original
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2002/95/EC)
LNJ836W83RA
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PDF
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LNJ836W86RA
Abstract: KLTFTN2K3600
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ836W86RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit PD 55 mW Forward current IF 20 mA Pulse forward current *
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Original
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2002/95/EC)
LNJ836W86RA
LNJ836W86RA
KLTFTN2K3600
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PDF
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LNJ336W83RA
Abstract: KLTFTN2K3600
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ336W83RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 55 mW Forward current
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Original
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2002/95/EC)
LNJ336W83RA
LNJ336W83RA
KLTFTN2K3600
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PDF
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LNJ236W82RA
Abstract: KLTFTN2K3600
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ236W82RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 55 mW Forward current
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Original
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2002/95/EC)
LNJ236W82RA
LNJ236W82RA
KLTFTN2K3600
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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Original
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ836W86RA Hight Bright Surface Mounting Chip LED ESS Type • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit PD 55 mW Forward current IF 20 mA Pulse forward current *
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Original
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2002/95/EC)
LNJ836W86RA
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PDF
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