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    KEC KHB011N40F2UPF

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KHB011N40F2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB011N40F2 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

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    KHB011N40F2

    Abstract: 011N40
    Text: SEMICONDUCTOR KHB011N40F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 011N40F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB011N40F2 KHB011N40F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009


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    PDF KHB011N40F2 O-220IS 011N40F KHB011N40F2 011N40

    KHB011N40F1

    Abstract: KHB011N40F2 KHB011N40P1
    Text: SEMICONDUCTOR KHB011N40P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB011N40P1/F1/F2 KHB011N40P1 Fig15. Fig16. Fig17. KHB011N40F1 KHB011N40F2 KHB011N40P1

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB011N40P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB011N40P1/F1/F2 KHB011N40P1 KHB011N40P1 dI/dt200A/,