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    K4S641632 Search Results

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    K4S641632 Price and Stock

    Samsung Semiconductor K4S641632H-UC60

    SDRAM - 64MBit (4M x 16) - 3.3V - 54-Pin TSOP-II - Tape&Reel
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    Onlinecomponents.com K4S641632H-UC60 5,487
    • 1 $17.59
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    • 100 $4.28
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    Samsung Semiconductor K4S641632F-TL1L

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    Bristol Electronics K4S641632F-TL1L 3,500
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    Samsung Semiconductor K4S641632E-TC60

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    Bristol Electronics K4S641632E-TC60 735
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    Quest Components K4S641632E-TC60 307
    • 1 $13.8375
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    K4S641632E-TC60 280
    • 1 $11.34
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    K4S641632E-TC60 76
    • 1 $9.45
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    K4S641632E-TC60 15
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    Samsung Semiconductor K4S641632H-TC75

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    Bristol Electronics K4S641632H-TC75 294
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    K4S641632H-TC75 151
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    Samsung Semiconductor K4S641632F-TC70

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    Bristol Electronics K4S641632F-TC70 268
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    K4S641632 Datasheets (85)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S641632 Samsung Electronics IC,SDRAM,4X1MX16,CMOS,TSOP,54PIN,PLASTIC Scan PDF
    K4S641632C Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Original PDF
    K4S641632C-TC1H Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TC1L Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TC60 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 166MHz Original PDF
    K4S641632C-TC70 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Original PDF
    K4S641632C-TC75 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 133MHz Original PDF
    K4S641632C-TC80 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Original PDF
    K4S641632C-TC/L10 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L1H Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L1L Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L60 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L70 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L75 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L80 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TL10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Original PDF
    K4S641632C-TL1H Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TL1L Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TL60 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 166MHz Original PDF

    K4S641632 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K4S641632E-TI P CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Jan. 2001 K4S641632E-TI(P) CMOS SDRAM Revision History


    Original     		PDF K4S641632E-TI 64Mbit 16Bit

    K4S641632N

    Abstract: k4s641632n-li K4S641632
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP K4S641632N k4s641632n-li K4S641632

    k4s641632n

    Abstract: K4S641632N-LC K4S640832N
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n K4S641632N-LC K4S640832N

    k4s641632n

    Abstract: k4s641632n-li tcl 14175
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP k4s641632n k4s641632n-li tcl 14175

    K4S641632F-TC75

    Abstract: K4S641632F
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75 K4S641632F

    K4S641632K

    Abstract: K4S640832K K4S641632
    Text: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4S640832K K4S641632K A10/AP K4S641632K K4S640832K K4S641632

    tcl 14175

    Abstract: K4S641632N
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP tcl 14175 K4S641632N

    Untitled

    Abstract: No abstract text available
    Text: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000


    Original     		PDF K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 A10/AP

    k4s641632n

    Abstract: No abstract text available
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n

    K4S641632C

    Abstract: circuit diagram for auto on off
    Text: K4S641632C CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632C 64Mbit 16Bit K4S641632C A10/AP circuit diagram for auto on off

    Untitled

    Abstract: No abstract text available
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632D 64Mbit 16Bit A10/AP

    K4S641632D

    Abstract: No abstract text available
    Text: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 June 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000


    Original     		PDF K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 K4S641632D A10/AP

    K4S641632D-TL1L

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10


    Original     		PDF 144pin) M466S0424DT0-L10, 4Mx64 4Mx16 K4S641632D-TL10, 000mil 4K/64ms 128bytes 256bytes 66MHz K4S641632D-TL1L

    K4S641632F-TC75

    Abstract: SAMSUNG TL1L 1M Synchronous DRAM samsung
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz K4S641632F-TC75 SAMSUNG TL1L 1M Synchronous DRAM samsung

    k4s641632n-lc

    Abstract: K4S641632N K4S640832N
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n-lc K4S641632N K4S640832N

    K4s641632d-tl1h

    Abstract: 4MX16
    Text: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 SODIMM M464S0424DT1-L1H/L1L, C1H/C1L • Organization : 4MX64 • Composition : 4MX16 *4 • Used component part # : K4S641632D-TL1H/L1L, C1H/C1L


    Original     		PDF PC100 144pin) M464S0424DT1-L1H/L1L, 4MX64 4MX16 K4S641632D-TL1H/L1L, 4K/64ms 100MHz K4s641632d-tl1h 4MX16

    K4S641632E-TC75

    Abstract: No abstract text available
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S641632E-TC75

    K4S641632F-TC75

    Abstract: No abstract text available
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75

    4MX16

    Abstract: intel date code format M464S0424CT1
    Text: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 SODIMM M464S0424CT1-L1H/L1L • Organization : 4MX64 • Composition : 4MX16 *4 • Used component part # : K4S641632C-TL1H/L1L


    Original     		PDF PC100 144pin) M464S0424CT1-L1H/L1L 4MX64 4MX16 K4S641632C-TL1H/L1L 4K/64ms 100MHz 4MX16 intel date code format M464S0424CT1

    K4S641632K-T

    Abstract: Synchronous DRAM and Samsung
    Text: K4S641632K Industrial Synchronous DRAM 64Mb K-die SDRAM Specification Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S641632K A10/AP K4S641632K-T Synchronous DRAM and Samsung

    K4S64163

    Abstract: K4S641632E
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S64163

    BT601

    Abstract: TVP5146M2 TVP5147M1 TVP5150AM1 TVP5151 TVP5160 SERVICE MANUAL tv samsung 4N7 250 Y2 capacitor tvp5158 program manual SECAM encoder
    Text: TVP5160 NTSC/PAL/SECAM/Component 2x10-Bit Digital Video Decoder Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


    Original     		PDF TVP5160 2x10-Bit SLES135E BT601 TVP5146M2 TVP5147M1 TVP5150AM1 TVP5151 TVP5160 SERVICE MANUAL tv samsung 4N7 250 Y2 capacitor tvp5158 program manual SECAM encoder

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm