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    IXYS MOSFET Search Results

    IXYS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IXYS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    XYS launches New PolarP2TM Power MOSFET Family

    Abstract: Ixtq460p2 IXFB120N50P2 mosfet ixys IXTH450P2 IXTP450P2 IXTQ450P2 IXTQ470P2 ixtq460
    Text: IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS launches New PolarP2TM Power MOSFET Family Milpitas, CA. and Biel, Switzerland. July 15, 2010 – IXYS Corporation NASDAQ:IXYS announces today the release of its new PolarP2TM Power MOSFET family, IXYS’ latest generation of fast and


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    12Ohm/nanocoulombs. XYS launches New PolarP2TM Power MOSFET Family Ixtq460p2 IXFB120N50P2 mosfet ixys IXTH450P2 IXTP450P2 IXTQ450P2 IXTQ470P2 ixtq460 PDF

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


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    N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219 PDF

    IXAN0062

    Abstract: 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet
    Text: IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation’s power MOSFET products and their typical application information. Power MOSFETs are widely used in power switching applications due to their features of easy control, fast


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    IXAN0062 IXAN0062 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet PDF

    MOSFET Based Chopper

    Abstract: MKE11R600DCGFC MOSFET Based Chopper applications MKE11R600DC CoolMOS mosfet 12A 600V Solar inverter power module design of boost chopper circuit
    Text: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 323 744 020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Releases the Highest Density, Highest Efficiency MOSFET Solution With Silicon Carbide Technology in an Isolated Integrated Package


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    IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

    Abstract: IXFZ520N075T2 IXTZ550N055T2
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces


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    IXTZ550N055T2 IXFZ520N075T2 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages PDF

    MMIX1F520N075T2

    Abstract: No abstract text available
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Introduces High-Current GigaMOS TrenchT2TM Power MOSFETs in New Proprietary SMPD Power Packages. Milpitas, CA. and Biel, Switzerland. October 7, 2010 – IXYS Corporation NASDAQ:IXYS announces the


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    5V/500A MMIX1F520N075T2. MMIX1F520N075T2 PDF

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


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    CH-2555 N1016, IXEP1400 CPC1706 CPC1020N PDF

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


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    CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844 PDF

    IXAN0065

    Abstract: IXTQ130N10T mosfet ixys
    Text: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance


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    IXAN0065 IXTH/IXTQ130N10T" IXAN0065 IXTQ130N10T mosfet ixys PDF

    xenon hid ballast

    Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary


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    E153432) com/IXAN0022 xenon hid ballast Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram PDF

    IXYS’ Clare Introduces 2 New Gate Driver Families

    Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation


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    IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers

    Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS


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    IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance

    Abstract: MOSFET OF K SERIES IXYS GMM 3x160-0055X2 IXYS Corporation power mosfet smd package
    Text: IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance Biel, Switzerland, May 14, 2009 – IXYS Corporation NASDAQ: IXYS announced today the extension of the ISOPLUS-DILTM package range using the latest generation TrenchMVTM


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    mosfet 1200V 40A

    Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
    Text: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


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    IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160 PDF

    Untitled

    Abstract: No abstract text available
    Text: Welcome to the world of IXYS Semiconductors! IXYS is made up of a team that is dedicated to providing efficient, cost effective, semiconductor solutions to meet a multitude of power control needs. Headquartered in California’s Silicon Valley, IXYS has differentiated itself by focusing on the higher power end of the semiconductor product spectrum.


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    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


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    IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


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    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPC1909 Single-Pole, Normally Open ISOPLUS -264 Power Relay INTEGRATED CIRCUITS DIVISION Description Characteristics Parameter Blocking Voltage Rating Units 60 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability


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    ISOPLUSTM-264 CPC1909 CPC1909 15Arms 2500Vrms DS-CPC1909-R06 PDF

    EVLD02

    Abstract: IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD DEIC420 IXDD414CI RF MOSFETs 10mhz mosfet EVDN404
    Text: MOSFET DRIVER IC'S SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 These ultra-fast high current drivers are optimized to drive IXYS RF MOSFETs and IXYS IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They


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    O-263 O-220 DEIC420 45MHz. EVDD404 EVDF404 EVLD02 IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD IXDD414CI RF MOSFETs 10mhz mosfet EVDN404 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPC1718 Single-Pole, Normally Open ISOPLUS -264 DC Power Relay INTEGRATED CIRCUITS DIVISION Characteristics Description Parameter Blocking Voltage Rating Units 100 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability


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    ISOPLUSTM-264 CPC1718 CPC1718 2500Vrms DS-CPC1718-R04 PDF

    PLUS247

    Abstract: ixys diode diode 3000v
    Text: FOR IMMEDIATE RELEASE IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 e-mail: [email protected] IXYS Introduces New High Voltage 2500V and 3000V BiMOSFETs Biel, Switzerland and Milpitas, CA. October 13, 2009 - IXYS Corporation NASDAQ:


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    ixys

    Abstract: No abstract text available
    Text: IXYS Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding requirements of power electronic applications. Our product portfolio of Power MOSFETs, IGBTs, SCHOTTKYs, FREDs, Thyristors,


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    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Standard MOSFET TSeries \¿y íú a e ro i5


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    Untitled

    Abstract: No abstract text available
    Text: IXYS High Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding require­ ments of power electronic applications. Our product portfolio o f Power MOSFETs, IGBTs, FREDs, Thyristors,


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