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    IXTP01N100 Search Results

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    IXTP01N100 Price and Stock

    Littelfuse Inc IXTP01N100D

    MOSFET N-CH 1000V 400MA TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP01N100D Tube 191 1
    • 1 $7.09
    • 10 $7.09
    • 100 $7.09
    • 1000 $3.57324
    • 10000 $3.57324
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    Newark IXTP01N100D Bulk 205 1
    • 1 $6.95
    • 10 $6.95
    • 100 $3.86
    • 1000 $3.52
    • 10000 $3.52
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    IXYS Corporation IXTP01N100D

    MOSFETs 0.1 Amps 1000V 110 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP01N100D 385
    • 1 $6.96
    • 10 $6.55
    • 100 $3.81
    • 1000 $3.57
    • 10000 $3.57
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    Quest Components IXTP01N100D 40
    • 1 $2.6144
    • 10 $1.9608
    • 100 $1.634
    • 1000 $1.634
    • 10000 $1.634
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    TTI IXTP01N100D Tube 300
    • 1 -
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    • 100 -
    • 1000 $3.57
    • 10000 $3.57
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    TME IXTP01N100D 180 1
    • 1 $6.32
    • 10 $5.57
    • 100 $4.66
    • 1000 $4.22
    • 10000 $4.22
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    ComSIT USA IXTP01N100D 8
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    New Advantage Corporation IXTP01N100D 200 1
    • 1 -
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    • 100 $8.82
    • 1000 $8.23
    • 10000 $8.23
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    IXYS Integrated Circuits Division IXTP01N100D

    MOSFET DIS.100mA 1000V N-CH TO220AB DEPLETION MODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTP01N100D 300
    • 1 $6.7947
    • 10 $6.7947
    • 100 $6.177
    • 1000 $6.177
    • 10000 $6.177
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    IXTP01N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP01N100 IXYS Original PDF
    IXTP01N100D IXYS 1000V high voltage MOSFET Original PDF

    IXTP01N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP01N100D

    Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V
    Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


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    PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 O-220) TY01N100D 100ms IXTP01N100D 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSX IXTY01N100D IXTU01N100D IXTP01N100D = ≤ RDS on 1000V 80Ω Ω N-Channel, Depletion Mode TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original
    PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 100ms 01N100D

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    PDF

    IXTH20N50D

    Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
    Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.


    Original
    PDF IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


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    PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    depletion mode mosfet

    Abstract: No abstract text available
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs The High Performance MOSFET family of Pow er MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a


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    PDF ISOPLUS220TM ISOPLUS220 depletion mode mosfet