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    IXFT10N100 Search Results

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    IXFT10N100 Price and Stock

    IXYS Corporation IXFT10N100

    MOSFET N-CH 1000V 10A TO268
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    DigiKey IXFT10N100 Tube 30
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    IXFT10N100 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT10N100 IXYS HiPerFET Power MOSFET Original PDF
    IXFT10N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFT10N100Q IXYS HiPerFETTM Power MOSFETs Q Class Original PDF
    IXFT10N100Q IXYS HiPerFET Power MOSFET Original PDF

    IXFT10N100 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1

    10N100

    Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q
    Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1 10N100 12N100Q 125OC d 209 l ixfT12N10 10N100Q

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions


    OCR Scan     		PDF IXFT10N100 IXFT12N100 13N100 10N100 12N100

    IXYS DS 145

    Abstract: 13N100
    Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS


    OCR Scan     		PDF IXFT10N100 IXFT12N100 13N100 10N100 12N100 13N100 IXYS DS 145

    13n10

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS


    OCR Scan     		PDF IXFT10N100 IXFT12N100 IXFT13N100 10N100 12N100 13N100 13n10

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50