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IXYS Corporation IXFR48N50Q MOSFET N-CH 500V 40A ISOPLUS247
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IXFR48N50Q Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR48N50Q		IXYS	500V HiPerFET power MOSFET		Original	PDF
IXFR48N50Q		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 40A ISOPLUS247		Original	PDF

IXFR48N50Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
48N50Q Abstract: 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings	Original	PDF	ISOPLUS247TM, 44N50Q 48N50Q 247TM E153432 IXFR44N50Q: IXFR48N50Q: 728B1 48N50Q 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet	Original	PDF	ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q:
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet	Original	PDF	ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q:
IXFR44N50Q Abstract: IXFR48N50Q 48N50Q ixfr48n5 Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings	Original	PDF	ISOPLUS247TM, 44N50Q 48N50Q 728B1 123B1 728B1 065B1 IXFR44N50Q IXFR48N50Q 48N50Q ixfr48n5
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet	Original	PDF	ISOPLUS247TM, 44N50Q 48N50Q 48N50Q -55ss
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions	Original	PDF	ISOPLUS247TM, 44N50Q 48N50Q 728B1 123B1 728B1 065B1
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50