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    IXFL44N100P Search Results

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    IXFL44N100P Price and Stock

    IXYS Corporation IXFL44N100P

    MOSFETs 44 Amps 1000V 0.22 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFL44N100P
    • 1 $53.91
    • 10 $48.03
    • 100 $42.16
    • 1000 $42.16
    • 10000 $42.16
    		Get Quote
    TME IXFL44N100P 23 1
    • 1 $22.64
    • 10 $18.01
    • 100 $16.22
    • 1000 $16.22
    • 10000 $16.22
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    Littelfuse Inc IXFL44N100P

    DiscMosfetN-CH HiPerFET-Polar ISOPLUS264 | Littelfuse IXFL44N100P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IXFL44N100P Bulk 8 Weeks 1
    • 1 $57.66
    • 10 $57.66
    • 100 $57.66
    • 1000 $57.66
    • 10000 $57.66
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    Ozdisan Elektronik IXFL44N100P
    • 1 $82.31628
    • 10 $82.31628
    • 100 $76.9311
    • 1000 $76.9311
    • 10000 $76.9311
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    IXFL44N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFL44N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A I5-PAK Original PDF

    IXFL44N100P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000


    Original     		IXFL44N100P 300ns 44N100P 4-01-08-D PDF

    44n10

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000


    Original     		IXFL44N100P 300ns 44N100P 4-01-08-D 44n10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		IXFL44N100P 300ns 44N100P 9-20-07-C PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF