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    IXFN38N100 Search Results

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    IXFN38N100 Price and Stock

    Littelfuse Inc IXFN38N100P

    MOSFET N-CH 1000V 38A SOT-227B
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    DigiKey IXFN38N100P Tube 270 1
    • 1 $44.37
    • 10 $34.803
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    Newark IXFN38N100P Bulk 300 1
    • 1 $43.48
    • 10 $35.11
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    RS IXFN38N100P Bulk 8 Weeks 10
    • 1 -
    • 10 $53.83
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    IXYS Corporation IXFN38N100Q2

    MOSFET N-CH 1000V 38A SOT-227
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    DigiKey IXFN38N100Q2 Tube
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    Mouser Electronics IXFN38N100Q2
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    IXYS Corporation IXFN38N100P

    MOSFET Modules 38 Amps 1000V
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    Mouser Electronics IXFN38N100P 507
    • 1 $43.9
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    TTI IXFN38N100P Tube 300
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    TME IXFN38N100P 1
    • 1 $59.72
    • 10 $47.5
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    IXYS Integrated Circuits Division IXFN38N100P

    MOSFET MOD.38A 1000V N-CH SOT-227B HIPERFET
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    Ozdisan Elektronik IXFN38N100P
    • 1 $58.67634
    • 10 $54.8377
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    IXYS Integrated Circuits Division IXFN38N100Q2

    MOSFET N-CH 1000V 38A SOT-227 / N-Channel 1000 V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B
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    Win Source Electronics IXFN38N100Q2 2,118
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    IXFN38N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN38N100P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 38A SOT-227B Original PDF
    IXFN38N100Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFN38N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    38N100P

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN38N100P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 38A Ω 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


    Original     		PDF IXFN38N100P 300ns OT-227 E153432 100ms 38N100P 7-14-09-D

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000V ID25 = 38A Ω RDS on ≤ 250mΩ N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr ≤ 300ns trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN38N100Q2 300ns OT-227 E153432 38N100Q2 5-27-08-B

    IXFN38N100Q2

    Abstract: IXFB38N100Q2
    Text: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF IXFN38N100Q2 OT-227 E153432 728B1 123B1 728B1 065B1 IXFN38N100Q2 IXFB38N100Q2

    IXFN38N100p

    Abstract: 38N100P IRM38A IRM-38 Power Diode 1000V irm 38 38n100
    Text: PolarTM Power MOSFET HiPerFETTM IXFN38N100P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 38A Ω 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


    Original     		PDF IXFN38N100P 300ns OT-227 E153432 100ms 38N100P 7-14-09-D IXFN38N100p IRM38A IRM-38 Power Diode 1000V irm 38 38n100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 38A ≤ 210mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF IXFN38N100P 300ns OT-227 E153432 38N100P 8-23-07-B

    IXFN38N100Q2

    Abstract: 38N100Q2 IXFN38N100 38N100
    Text: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000V ID25 = 38A Ω RDS on ≤ 250mΩ N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr ≤ 300ns trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN38N100Q2 300ns OT-227 E153432 38N100Q2 5-27-08-B IXFN38N100Q2 IXFN38N100 38N100

    IXFN38N100P

    Abstract: sot 227b diode fast IXFN38N100
    Text: IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN38N100P 300ns OT-227 E153432 38N100P 4-03-08-C IXFN38N100P sot 227b diode fast IXFN38N100

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P