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    IXFH6N120P Search Results

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    IXFH6N120P Price and Stock

    Littelfuse Inc IXFH6N120P

    MOSFET N-CH 1200V 6A TO247AD
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    DigiKey IXFH6N120P Tube 451 1
    • 1 $10.69
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    • 100 $6.77267
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    Newark IXFH6N120P Bulk 300
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    • 1000 $6.3
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    RS IXFH6N120P Bulk 8 Weeks 30
    • 1 -
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    • 100 $9.3
    • 1000 $9.3
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    Future Electronics IXFH6N120P Tube 30
    • 1 -
    • 10 -
    • 100 $6.65
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    IXYS Corporation IXFH6N120P

    MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A
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    Mouser Electronics IXFH6N120P 280
    • 1 $10.69
    • 10 $9.91
    • 100 $6.69
    • 1000 $6.01
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    Future Electronics IXFH6N120P Tube 300
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    • 100 $5.89
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    TTI IXFH6N120P Tube 300 30
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    • 100 $6.59
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    New Advantage Corporation IXFH6N120P 288 1
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    • 100 $14.88
    • 1000 $13.89
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    IXFH6N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH6N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 6A TO-247 Original PDF

    IXFH6N120P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS


    Original
    IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P PDF

    IXFA6N120P

    Abstract: IXFH6N120P IXFH6N120 IXFP6N120P
    Text: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions


    Original
    IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB O-247 6N120P IXFH6N120P IXFH6N120 PDF

    HiperFET

    Abstract: MOSFET 1200v 3a IXFA6N120P
    Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions


    Original
    IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P HiperFET MOSFET 1200v 3a IXFA6N120P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A Ω ≤ 2.75Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions


    Original
    IXFA6N120P IXFP6N120P IXFH6N120P O-263 6N120P PDF