IXFB44N100P Search Results

IXFB44N100P Price and Stock

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Littelfuse Inc IXFB44N100P MOSFET N-CH 1000V 44A PLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFB44N100P	Tube	300		1	1 $28.5 10 $28.5 100 $20.3424 1000 $20.3424 10000 $20.3424	Buy Now
RS	IXFB44N100P	Bulk		8 Weeks	25	1 - 10 - 100 $31.46 1000 $31.46 10000 $31.46	Get Quote
IXYS Corporation IXFB44N100P MOSFETs 44 Amps 1000V 0.22 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFB44N100P		576			1 $28.5 10 $28.5 100 $20.34 1000 $20.34 10000 $20.34	Buy Now
Newark	IXFB44N100P	Bulk	544		1	1 $29.64 10 $23.98 100 $23.1 1000 $23.1 10000 $23.1	Buy Now
Future Electronics	IXFB44N100P	Tube			300	1 - 10 - 100 $20.11 1000 $19.95 10000 $19.95	Buy Now
TTI	IXFB44N100P	Tube			300	1 - 10 - 100 - 1000 $20.34 10000 $20.34	Buy Now
TME	IXFB44N100P		282		1	1 $34.34 10 $30.33 100 $27.28 1000 $27.28 10000 $27.28	Buy Now
IXYS Integrated Circuits Division IXFB44N100P MOSFET DIS.44A 1000V N-CH PLUS264-3 HIPERFET THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFB44N100P					1 $37.72595 10 $37.72595 100 $35.2579 1000 $35.2579 10000 $35.2579	Get Quote

IXFB44N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFB44N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264		Original	PDF

IXFB44N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFB44N100P Abstract: IXFB44N100 44n10 44n100p DS99867A Text: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous	Original	PDF	IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D IXFB44N100P IXFB44N100 44n10 DS99867A
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	PDF	IXFB44N100P 300ns PLUS264TM 44N100P 8-27-07-B
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250