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    IXDD614 Price and Stock

    Littelfuse Inc IXDD614SITR

    14A 8SOIC EXP MTL NON INV W/ENAB
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    Littelfuse Inc IXDD614YI

    IC PWR DRIVER 1:1 TO263-5
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    Littelfuse Inc IXDD614CI

    IC GATE DRVR LOW-SIDE TO220-5
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    DigiKey IXDD614CI Tube 2,095 1
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    Littelfuse Inc IXDD614SI

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey IXDD614SI Tube 1,439 1
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    Littelfuse Inc IXDD614PI

    IC GATE DRVR LOW-SIDE 8DIP
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    DigiKey IXDD614PI Tube 420 1
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    IXDD614 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXDD614CI IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), MOSFET N-CH 14A LO SIDE TO-220-5 Original PDF
    IXDD614D2TR IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 5LEAD TO-263 NON INVERTING Original PDF
    IXDD614PI IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), MOSFET DVR ULT FAST 14A 8-DIP Original PDF
    IXDD614SI IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 8SOIC EXP MTL NON INV W/ENAB Original PDF
    IXDD614SITR IXYS PMIC - MOSFET, Bridge Drivers - External Switch, Integrated Circuits (ICs), 14A 8SOIC EXP MTL NON INV W/ENAB Original PDF
    IXDD614YI IXYS PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC LOW SIDE DRIVER 14A TO263-5 Original PDF

    IXDD614 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC1706 CPC1020N

    SiC BJT

    Abstract: transistor 304
    Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.


    Original     		PDF 12M6501 SiC BJT transistor 304

    IXYS’ Clare Introduces 2 New Gate Driver Families

    Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20SICP12-263 O-263 SIPC12 GA20SIPC12 00E-47 26E-28 98E-10 22E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA05JT12-263 O-263 GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA100SICP12-227 OT-227 ReSIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    hcpl 322j

    Abstract: hcpl-322j HCPL316
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    IRFD630

    Abstract: HCPL-322J HCPL322J TO-247AB
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB

    ACPL-322J

    Abstract: MIC4452YN
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN

    Untitled

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA16JT17-247 O-247AB GA16JT17 03E-47 72E-28 68E-10 72E-09 00E-03

    IXDD614

    Abstract: IXDN614
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF 14-Ampere IXDD614 IXDI614 IXDN614 614-R00J

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA50SICP12-227 OT-227 Redu50SIPC12 GA50SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844

    IXDN614

    Abstract: IXDN614YI IXDN614SI TO220 land pattern IXDD614CI 614CI IXDD614SI IXDD614YI
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF 14-Ampere IXDD614 IXDI614 IXDN614 614-R05 IXDN614YI IXDN614SI TO220 land pattern IXDD614CI 614CI IXDD614SI IXDD614YI

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20JT12-263 O-263 GA20JT12 00E-47 26E-28 98E-10 22E-9 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor -VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    IXDD614

    Abstract: IXDD614CI IXDD614YI IXDI614 IXDI614PI IXDD614PI IXDD614SI IXDD614SITR IXDN614 IXDN614PI
    Text: IXD_614 14-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF 14-Ampere IXDD614 IXDI614 IXDN614 614-R01 IXDD614CI IXDD614YI IXDI614PI IXDD614PI IXDD614SI IXDD614SITR IXDN614PI

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original     		PDF N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219