ITR03572 Search Results

ITR03572 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC3649 Abstract: 2SA1419 Text: 2SA1419 / 2SC3649 注文コード No. N 2 0 0 7 B 三洋半導体データシート半導体ニューズ No.N2007A をさしかえてください。 2SA1419 / 2SC3649 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ高耐圧スイッチング用	Original	PDF	2SA1419 2SC3649 N2007A 2SA1419 250mm2 100mA 2SC3649
Untitled Abstract: No abstract text available Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.	Original	PDF	2SA1419 2SC3649 EN2007B 2SA1419
Untitled Abstract: No abstract text available Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	Original	PDF	EN2007C 2SA1419/2SC3649 2SA1419 250mm2
Untitled Abstract: No abstract text available Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity	Original	PDF	2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419
Untitled Abstract: No abstract text available Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.	Original	PDF	EN2007B 2SA1419 2SC3649 2SA1419 250mm20
2SC3649 Abstract: ITR03571 ITR03572 2SA1419 Text: Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity hybrid ICs.	Original	PDF	ENN2007A 2SA1419/2SC3649 2SA1419/2SC3649] 25max 2SA1419 2SC3649 ITR03571 ITR03572 2SA1419
2SC3649 Abstract: 2SA1419 ITR03571 2SA141 Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.	Original	PDF	2SA1419 2SC3649 EN2007B 2SA1419 2SC3649 ITR03571 2SA141
Untitled Abstract: No abstract text available Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity	Original	PDF	2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419