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Catalog Datasheet	MFG & Type	PDF	Document Tags
MCH3447 Abstract: MCH5824 marking xa Text: MCH5824 Ordering number : ENN8201 MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3447 and a schottky barrier diode (SS05015)	Original	PDF	MCH5824 ENN8201 MCH3447) SS05015) MCH3447 MCH5824 marking xa
MCH3447 Abstract: MCH5824 IT09125 Text: 注文コード No. N 8 2 0 1 MCH5824 MCH5824 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード汎用スイッチングデバイス特長・N チャネル MOS 形電界効果トランジスタ MCH3447 とショットキバリアダイオード(SS05015)を 1 パッケージに	Original	PDF	MCH5824 MCH3447) SS05015) 900mm2 21805PE TB-00001213 IT06804 IT06805 MCH3447 MCH5824 IT09125
marking ZY Abstract: MCH3447 Text: MCH3447 Ordering number : ENN8200 N-Channel Silicon MOSFET MCH3447 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol	Original	PDF	MCH3447 ENN8200 900mm2 marking ZY MCH3447
SCH2807 Abstract: MARKING QG Text: SCH2807 Ordering number : ENN8215 SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1407 and a schottky barrier diode (SS05015)	Original	PDF	SCH2807 ENN8215 SCH1407) SS05015) SCH2807 MARKING QG