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    ISOTOP BIPOLAR Search Results

    ISOTOP BIPOLAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    ISOTOP BIPOLAR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STE38NA50

    Abstract: STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV
    Text: TRANSISTORS POWER MODULES BIPOLAR IN ISOTOP For other conf. Conf. D A B A D B D D D D D D A A A C A C C B VCEO VCEV IC Ptot VCE sat @ IC / IB (V) (V) (A) (W) (V) (A) 125 125 125 300 300 300 300 450 450 450 450 450 450 450 450 450 450 450 450 450 150 200


    Original     		STE250N06 STE180N10 STE150N10 STE100N20 STE90N25 STE50N40 STE53NA50 STE47N50 STE45N50 STE38NA50 STE38NA50 STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV PDF

    triac 131-6

    Abstract: l6232e btb24 application notes l6254a1 ST L6201 application note MC 1200 Motor Control Board ST L6203 application note L298HN H-Bridge BTB16-600CW UNIVERSAL MOTOR SPEED CONTROL CIRCUIT diac BZW06-376B
    Text: Selection Guide for Motor Control S T M P U T T I N G I C R O E L E C T R O N I C S Y O I O U F Y N O U R C O N T R O L M O T O R DEDICATED POWER PACKAGES* Max247 ISOTOP MULTIWATT15 PENTAWATT Power SO-36 MULTIWATT11 Power SO-20 * Short selection of innovative power packages


    Original     		Max247 MULTIWATT15 SO-36 MULTIWATT11 SO-20 14bit 8/10bit TQFP44 TQFP64 PLCC44/SDIP42 triac 131-6 l6232e btb24 application notes l6254a1 ST L6201 application note MC 1200 Motor Control Board ST L6203 application note L298HN H-Bridge BTB16-600CW UNIVERSAL MOTOR SPEED CONTROL CIRCUIT diac BZW06-376B PDF

    BUW52I

    Abstract: BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A
    Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION VCEO VCBO IC Ptot Resistive Switching Typical application Package Type V BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BU508D BU208A BU208D BUH615D THD215HI BUH1015HI


    Original     		BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BUW52I BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A PDF

    BUL310P

    Abstract: smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515
    Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION TYPICAL APPLICATION Device BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUH615D THD215HI THD200FI BUH1015HI BUH1015 BUH1215 BUH2M20AP VCEO VCBO IC Ptot V (V) (A) (W)


    Original     		BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUL310P smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515 PDF

    power supply schematic diagram

    Abstract: 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W
    Text: ESBT Emitter Switched Bipolar Transistors July 2007 www.st.com/esbt The ESBT product family Based on an emitter switching concept, the new ESBT family of high-performance power actuators provides a simple, cost-effective solution for applications requiring


    Original     		O220FP-4L O247-4L SGESBT0707 power supply schematic diagram 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    uc3843 12v to 24v

    Abstract: uc3842 half bridge forward converter UC3843 uc3845 half bridge mc34063 5v 4A uc3842 200w uc3843 12v to 40v stepdown uc3842 uc3844 100w uc3842 full bridge
    Text: POWER SUPPLIES HIGH POWER FULL & HALF BRIDGE CONVERTER RECTIFICATION BRIDGES Type OUTPUT POWER AC < 1000W 110V 220V 380V ▲ STP11NB40▲ STP10NA40/FI STW16NA40 STW15NB50▲ STU14NA50▲ STW20N350▲ STH15NA50FI STP9NB50/FI▲ STP8NA50/FI STP6NB50▲ STW12NA50


    Original     		STP11NB40v STP10NA40/FI STW16NA40 STW15NB50v STU14NA50v STW20N350v STH15NA50FI STP9NB50/FIv STP8NA50/FI STP6NB50v uc3843 12v to 24v uc3842 half bridge forward converter UC3843 uc3845 half bridge mc34063 5v 4A uc3842 200w uc3843 12v to 40v stepdown uc3842 uc3844 100w uc3842 full bridge PDF

    forward converter UC3843

    Abstract: buf405ax STE38NA50 uc3843 12v to 40v 1000W full bridge regulator uc3843 12v to 24v uc3842 200w uc3844 100w BYV255V-200 forward converter uc3844
    Text: TABLE OF CONTENTS Page POWER SUPPLY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 LIGHTING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 IGNITION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10


    Original     		00Family GS175T48Family GS300T48-5 2-15-24-48V 2-15V forward converter UC3843 buf405ax STE38NA50 uc3843 12v to 40v 1000W full bridge regulator uc3843 12v to 24v uc3842 200w uc3844 100w BYV255V-200 forward converter uc3844 PDF

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the


    Original     		APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500 PDF

    schematic diagram welding device

    Abstract: cascode mosfet switching STE50DE100 ic 1240 equivalent ics ultra low Ciss
    Text: STE50DE100 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE Figure 1: Package Table 1: General Features n n n n n VCS ON IC RCS(ON) 1.3 V 50 A 0.026 W HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON


    Original     		STE50DE100 STE50DE100 schematic diagram welding device cascode mosfet switching ic 1240 equivalent ics ultra low Ciss PDF

    ST 358

    Abstract: isotop bipolar JESD97 STE70IE120 E70IE120
    Text: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance


    Original     		STE70IE120 STE70DE120 E70IE120 ST 358 isotop bipolar JESD97 STE70IE120 E70IE120 PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    JESD97

    Abstract: STE50DE100
    Text: STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 Ω General features VCS ON IC 1.3 V 50 A RCS(ON) 0.026 • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz


    Original     		STE50DE100 STE50DE100 JESD97 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		BUV298V 2002/93/EC PDF

    BUF 460 AV

    Abstract: IC 2030 schematic diagram 3030DV BUV 460 C esm 200 buf 450 diode diode ESM 15 diagram DARLINGTON buv 40 a 6045AV
    Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ra0 S ®(IlLll(E?(si®R!IOlgg POWER MODULES BIPOLAR IN ISOTOP ISOTOP; Standard version ISOTOP : Faston version Darlingtons Bipolar transistors Bipolar transistors Darlingtons Internal schematic diagrams J J BO- O C


    OCR Scan     		PDF

    APT90GF100JN

    Abstract: No abstract text available
    Text: A dvanced POWÊDi Te c h n o l o g y * APT90GF100JN 1000V 90A SINGLE DIE ISOTOP PACKAGE ISOTOP I’\JWER m o s iv ®ig b t S Ä " U L Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


    OCR Scan     		APT90GF100JN E145592 APT90GF100JN OT-227 PDF

    APT90GF100JN

    Abstract: sgs Thomson Thyristor G0011
    Text: ADVANCED POWER M TECHNOLOGY b3 E D • 0257^01 DOÜllflD 201 * A V P A dvanced P o w er Te c h n o lo g y APT90GF100JN 1000V 90A H SINGLE DIE ISOTOP® PACKAGE ISOTOP«' POWER MOS IV®IGBT Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE


    OCR Scan     		02S7101 APT90GF100JN E145592 08Vces OT-227 sgs Thomson Thyristor G0011 PDF

    w41 transistor

    Abstract: transistor mj 1504
    Text: ADVANCED POWER TECHNOLOGY b3E D • 0257^1 A OGÜllflO 2D1 « A V P d v a n c e d P ow er T e c h n o lo g y 9 APT90GF100JN 1000V 90A SINGLE DIE ISOTOP PACKAGE ISOTOP POWER MOS IV®IGBT ^ \ " U L Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE


    OCR Scan     		APT90GF100JN E145592 T-227 w41 transistor transistor mj 1504 PDF

    TSG50N50DV

    Abstract: basel 332 k basel 332 TSG50N50DF GE 149 TRANSISTOR
    Text: 30E D H 7^237 SGS-THOMSON «[^mitgïFGMOûS GD30S3D T 1 3 3 5 TSG50N50DF TSG50N50DV ISOLATED GATE BIPOLAR TRANSISTOR IGBT V T J ^ rn n s ô n ~ ISOTOP POWER MODULE T E N T A T IV E D A T A • . ■ ■ ■ . VOLTAGE-CONTROLLED GATE LOW ON-VOLTAGE DROP VcE(sat)


    OCR Scan     		GD30S3D TSG50N50DF TSG50N50DV O-240) PC-029« TSG50N50DV basel 332 k basel 332 GE 149 TRANSISTOR PDF

    TSG25N100DV

    Abstract: TSG25N100DF ISG25 3641b
    Text: 30E D S G S -T H O M [* [F 3 m m 7 cj a c}237 QQ3QS24 M • S O N T IS G 2 5 N 1 0 0 D F [IO T 2 [* S T S G 2 5 N 1 O O D V ISOLATED GATE BIPOLAR TRANSISTOR (IGBT) _ ISOTOP POWER MODULE S G S-THOMSON ■ ■ . . . VOLTAGE-CONTROLLED GATE LOW ON-VOLTAGE DROP VcE(sat)


    OCR Scan     		QD30524 ISG25N100DF TSG25N100DV TSG25N100DV TSG25N100DF T-91-20 O-240) TSG25N100DF ISG25 3641b PDF

    IRFP 740

    Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
    Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7


    OCR Scan     		IRF742FI IRF740 IRF740FI SGSP475 SGSP575 IRF350 IRFP350FI TSD4M350V IRF823 IRF823FI IRFP 740 SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M351V 220 to 110 power PDF

    BUF298F

    Abstract: BUF298V 3641B
    Text: 3QE rz 7 ^ 7# D • QÜ3D33Ô 7 S C S -T H O M S O N K œ iL lû lM K S s G S TH0MS0N 3 U F 2 9 8 F BUF298V 'T -'S s^S NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE 2500V RMS


    OCR Scan     		0Q3033Ã 3UF298F BUF298V BUF298F SC04830 T-91-20 O-240) BUF298F 3641B PDF