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    IRG7CH Price and Stock

    Infineon Technologies AG IRG7CH35UED

    IGBT 1200V ULTRA FAST DIE
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    Infineon Technologies AG IRG7CH73K10EF

    IGBT 1200V ULTRA FAST DIE
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    Infineon Technologies AG IRG7CH73K10EF-R

    IGBT 1200V ULTRA FAST DIE
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    Infineon Technologies AG IRG7CH37K10EF

    Trans IGBT Chip N-CH 1200V 15A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG7CH37K10EF)
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    Avnet Americas IRG7CH37K10EF Waffle Pack 2,290
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    Infineon Technologies AG IRG7CH30K10EF

    Trans IGBT Chip N-CH 1200V 10A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG7CH30K10EF)
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    Avnet Americas IRG7CH30K10EF Waffle Pack 3,708
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    Find more IRG7CH price and stock on Findchips.com

    IRG7CH Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7CH28UEF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH30K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH35UEF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH37K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH42UEF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH44K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH50K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH54K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73K10EF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73UEF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH75K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH75UEF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH81K10EF-R Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF

    IRG7CH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 96271 IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF IRG7CH54K10B

    Untitled

    Abstract: No abstract text available
    Text: PD - 97747 IRG7CH73K10B-R Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 s Short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution


    Original     		PDF IRG7CH73K10B-R

    IRG7CH44K10B

    Abstract: IRG7CH44
    Text: PD - 96270A IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF 6270A IRG7CH44K10B IRG7CH44K10B IRG7CH44

    IRG7CH50

    Abstract: Inverters el tape IRG7CH50UB
    Text: PD - 97628 IRG7CH50UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching


    Original     		PDF IRG7CH50UB IRG7CH50 Inverters el tape IRG7CH50UB

    Untitled

    Abstract: No abstract text available
    Text: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features


    Original     		PDF IRG7CH37K10EF

    IRG7CH81K10B

    Abstract: IRG7CH81K
    Text: PD - 97423 IRG7CH81K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF IRG7CH81K10B IRG7CH81K10B IRG7CH81K

    irg7ph35

    Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD
    Text: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching


    Original     		PDF IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD

    Untitled

    Abstract: No abstract text available
    Text: PD - 97430 IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF IRG7CH73K10B 1200e

    Untitled

    Abstract: No abstract text available
    Text: PD - 97664A IRG7CH37K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF 7664A IRG7CH37K10B

    Untitled

    Abstract: No abstract text available
    Text: PD - 96272 IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF IRG7CH75K10B

    IRG7CH54K10B

    Abstract: IRG7CH54
    Text: PD - 96271A IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF 6271A IRG7CH54K10B IRG7CH54K10B IRG7CH54

    IRG7CH75K10B

    Abstract: IRG7CH MIL-HDBK-263
    Text: PD - 96272A IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF 6272A IRG7CH75K10B IRG7CH75K10B IRG7CH MIL-HDBK-263

    IRG7CH73K10

    Abstract: IRG7CH73K10B MIL-HDBK-263
    Text: PD - 97430A IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF 7430A IRG7CH73K10B IRG7CH73K10 IRG7CH73K10B MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: PD - 96270 IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF IRG7CH44K10B

    for IR IGBT die

    Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
    Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient


    Original     		PDF 7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH