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    Vishay Siliconix IRFZ24L

    MOSFET N-CH 60V 17A TO262-3
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    IRFZ24L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFZ24L International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ24L International Rectifier Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) Original PDF
    IRFZ24L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO-262 Original PDF
    IRFZ24L Unknown Scan PDF

    IRFZ24L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ24S/L IRFZ24S) IRFZ24L) 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S IRFZ24S/SiHFZ24S) IRFZ24L/SiHFZ24L) O-262) O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S IRFZ24S/SiHFZ24S) IRFZ24L/SiHFZ24L) O-262) O-263) 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 2011/65/EU

    AN-994

    Abstract: IRFZ24 IRFZ24L IRFZ24S diode ir 10-16
    Text: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ24S/L IRFZ24S) IRFZ24L) AN-994 IRFZ24 IRFZ24L IRFZ24S diode ir 10-16

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11

    IRFZ24S

    Abstract: AN-994 IRFZ24 IRFZ24L
    Text: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ24S/L IRFZ24S) IRFZ24L) IRFZ24S AN-994 IRFZ24 IRFZ24L

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 2011/65/EU

    5d surface mount diode

    Abstract: IRFZ2 IRFZ24L IRFZ24 SiHFZ24L SiHFZ24S SiHFZ24S-E3 IRFZ24S SiHFZ24
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 18-Jul-08 5d surface mount diode IRFZ2 IRFZ24L IRFZ24 SiHFZ24S-E3 IRFZ24S SiHFZ24

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC O-262)

    irfz24 d2pak

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 18-Jul-08 irfz24 d2pak

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC O-262)

    irf510 switch

    Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original     		PDF O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215

    Untitled

    Abstract: No abstract text available
    Text: P D -9.891 A In te rn a tio n a l I Q R Rectifier IR F Z 2 4 S /L HEXFET Power M OSFET Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching V dss = 60V R D S (o n ) = 0 .1 0 ft


    OCR Scan     		PDF IRFZ24S) IRFZ24L)